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1مؤتمر
المؤلفون: Yu, X.-R., Hsieh, C.-C., Chuang, M.-H., Chiu, M.-Y., Sun, T.-C., Geng, W.-Z., Chang, W.-H., Shih, Y.-J., Lu, W.-H., Chang, W.-C., Lin, Y.-C., Pai, Y.-C., Lai, C.-Y., Dei, Y., Yang, C.-Y., Lu, H.-Y., Lin, N.-C., Wu, C.-T., Kao, K.-H., Ma, W. C.-Y., Lu, D. D., Lee, Y.-J., Luo, G.-L., Chiang, M.-H., Maeda, T., Wu, W.-F., Li, Y.-M., Hou, T.-H.
المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Relation: 2023 International Electron Devices Meeting (IEDM)
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2مؤتمر
المؤلفون: Yu, X.-R., Chuang, M.-H., Chang, S.-W., Chang, W.-H., Hong, T.-C., Chiang, C.-H., Lu, W.-H., Yang, C.-Y., Chen, W.-J., Lin, J.-H., Wu, P.-H., Sun, T.-C., Kola, S., Yang, Y.-S., Da, Yun, Sung, P.-J., Wu, C.-T., Cho, T.-C., Luo, G.-L., Kao, K.-H., Chiang, M.-H., Ma, W. C.-Y., Su, C.-J., Chao, T.-S., Maeda, T., Samukawa, S., Li, Y., Lee, Y.-J., Wu, W.-F., Tarng, J.-H., Wang, Y.-H.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :20.5.1-20.5.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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3مؤتمر
المؤلفون: Yu, X.-R., Chang, W.-H, Hong, T.-C., Sung, P.-J., Agarwal, A., Luo, G.-L., Wu, C.-T., Kao, K.-H., Su, C.-J., Chang, S.-W., Lu, W.-H., Fu, P.-Y., Lin, J.-H., Wu, P.-H., Cho, T.-C., Ma, W. C.-Yu., Lu, D.-D., Chao, T.-S., Maeda, T., Lee, Y.-J., Wu, W.-F., Yeh, W.-K., Wang, Y.-H.
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :399-400 Jun, 2022
Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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4مؤتمر
المؤلفون: Chang, S.-W., Lu, T.-H., Yang, C.-Y., Yeh, C.-J., Huang, M.-K., Meng, C.-F., Chen, P.-J., Chang, T.-H., Chang, Y.-S., Jhu, J.-W., Hong, T.-Z., Ke, C.-C., Yu, X.-R., Lu, W.-H., Baig, M. A., Cho, T.-C., Sung, P.-J., Su, C.-J., Hsueh, F.-K., Chen, B.-Y., Hu, H.-H., Wu, C.-T., Lin, K.-L., Ma, W. C.-Y., Lu, D.-D., Kao, K.-H., Lee, Y.-J., Lin, C.-L., Huang, K.-P., Chen, K.-M., Li, Y., Samukawa, S., Chao, T.-S., Huang, G.-W., Wu, W.-F., Lee, W.-H., Li, J.-Y., Shieh, J.-M., Tarng, J.-H., Wang, Y.-H., Yeh, W.-K.
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :34.4.1-34.4.4 Dec, 2021
Relation: 2021 IEEE International Electron Devices Meeting (IEDM)
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5دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
6مؤتمر
المؤلفون: Hong, T.-Z., Chang, W.-H., Agarwal, A., Huang, Y.-T., Yang, C.-Y., Chu, T.-Y., Chao, H.-Y., Chuang, Y., Chung, S.-T., Lin, J.-H., Luo, S.-M., Tsai, C.-J., Li, M.-J., Yu, X.-R., Lin, N.-C., Cho, T.-C., Sung, P.-J., Su, C.-J., Luo, G.-L., Hsueh, F.-K., Lin, K.-L., Ishii, H., Irisawa, T., Maeda, T., Wu, C.-T., Ma, W. C.-Y., Lu, D.-D., Kao, K.-H., Lee, Y.-J., Chen, H. J.-H., Lin, C.-L., Chuang, R. W., Huang, K.-P., Samukawa, S., Li, Y.-M., Tarng, J.-H., Chao, T.-S., Miura, M., Huang, G.-W., Wu, W.-F., Li, J.-Y., Shieh, J.-M., Wang, Y.-H., Yeh, W.-K.
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :15.5.1-15.5.4 Dec, 2020
Relation: 2020 IEEE International Electron Devices Meeting (IEDM)
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7مؤتمرFirst Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
المؤلفون: Chang, S.-W., Sung, P.-J., Chu, T-Y., Lu, D. D., Wang, C.-J., Lin, N.-C., Su, C.-J., Lo, S.-H., Huang, H.-F., Li, J.-H., Huang, M.-K., Huang, Y.-C., Huang, S.-T., Wang, H.-C., Huang, Y.-J., Wang, J.-Y., Yu, L. - W, Huang, Y.-F., Hsueh, F. - K., Wu, C.-T., Ma, W. C.-Y., Kao, K.-H., Lee, Y. - J., Lin, C.-L., Chuang, R. W., Huang, K.-P., Samukawa, S., Li, Y., Lee, W. - H., Chao, T.-S., Huang, G. - W., Wu, W.-F., Li, J. - Y., Shieh, J.-M., Yeh, W. - K., Wang, Y.-H.
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :11.7.1-11.7.4 Dec, 2019
Relation: 2019 IEEE International Electron Devices Meeting (IEDM)
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8مؤتمر
المؤلفون: Sung, P.-J., Su, C.-J., Lu, D. D., Luo, S.-X., Kao, K.-H., Ciou, J.-Y., Jao, C.-Y., Hsu, H.-S., Wang, C.-J., Hong, T.-C., Liao, T.-H., Fang, C.-C., Wang, Y.-S., Huang, H.-F., Li, J.-H., Huang, Y.-C., Hsueh, F.-K., Wu, C.-T., Ma, W. C.-Y., Huang, K.-P., Lee, Y.-J., Chao, T.-S., Li, J.-Y., Wu, W.-F., Yeh, W.-K., Wang, Y.-H.
المصدر: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2019 International Symposium on. :1-2 Apr, 2019
Relation: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
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9دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
10مؤتمر
المؤلفون: Sung, P.-J., Chang, C.-Y., Chen, L.-Y., Kao, K.-H., Su, C.-J., Liao, T.-H., Fang, C.-C., Wang, C.-J., Hong, T.-C., Jao, C.-Y., Hsu, H.-S., Luo, S.-X., Wang, Y.-S., Huang, H.-F., Li, J.-H., Huang, Y.-C., Hsueh, F.-K., Wu, C.-T., Huang, Y.-M., Hou, F.-J., Luo, G.-L., Shen, Y.-L., Ma, W. C.-Y., Huang, K.-P., Lin, K.-L., Samukawa, S., Li, Y., Huang, G.-W, Lee, Y.-J., Li, J.-Y., Wu, W.-F., Shieh, J.-M., Chao, T.-S., Yeh, W.-K., Wang, Y.-H.
المصدر: 2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :21.4.1-21.4.4 Dec, 2018
Relation: 2018 IEEE International Electron Devices Meeting (IEDM)