يعرض 1 - 10 نتائج من 83 نتيجة بحث عن '"MacWilliams, K.P."', وقت الاستعلام: 1.00s تنقيح النتائج
  1. 1
    مؤتمر
    UV Curing Effects on Glass Structure and Mechanical Properties of Organosilicate Low-k Thin Films

    المؤلفون: Gage, D.M., Guyer, E.P., Stebbins, J.F., Zhenjiang Cui, Al-Bayati, A., Demos, A., MacWilliams, K.P., Dauskardt, R.H.

    المصدر: 2006 International Interconnect Technology Conference Interconnect Technology Conference, 2006 International. :149-151 2006

    Relation: 2006 International Interconnect Technology Conference

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  2. 2
    مؤتمر
    New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

    المؤلفون: Wang-Ratkovic, J., Lacoe, R.C., MacWilliams, K.P., Miryeong Song, Brown, S., Yabiku, G.

    المصدر: 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Reliability physics Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International. :312-319 1997

    Relation: 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual

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  3. 3
    مؤتمر
    The effects of hydrogen and deuterium incorporation on the electrical performance of a GaAs MESFET

    المؤلفون: Eng, D.C., Culbertson, R.J., MacWilliams, K.P.

    المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE. :140-143 1995

    Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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  4. 4
    مؤتمر
    Quantifying ESD/EOS latent damage and integrated circuit leakage currents

    المؤلفون: Miryeong Song, Eng, D.C., MacWilliams, K.P.

    المصدر: Electrical Overstress/Electrostatic Discharge Symposium Proceedings Electrical overstress/electrostatic discharge Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995. :304-310 1995

    Relation: Proceedings of 17th Annual Electrical Overstress/Electrostatic Discharge Symposium

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  5. 5
    مؤتمر
    PMOS hot-carrier rebound and degradation

    المؤلفون: Song, M., MacWilliams, K.P., Scarpulla, J., Swanson, D.J., Cable, J.S., Woo, J.C.S.

    المصدر: Proceedings of IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International. :519-522 1993

    Relation: Proceedings of IEEE International Electron Devices Meeting

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  6. 6
    مؤتمر
    Bias and temperature dependence of hot carrier lifetime from 77 K to 300 K

    المؤلفون: Song, M., MacWilliams, K.P., Cable, J.S., Woo, J.C.S.

    المصدر: 1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :707-710 1992

    Relation: Proceedings of IEEE International Electron Devices Meeting

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  7. 7
    مؤتمر
    High performance GeSi quantum-well PMOS on SIMOX

    المؤلفون: Nayak, D.K., Park, J.S., Woo, J.C.S., Wang, K.L., Yabiku, G.K., MacWilliams, K.P.

    المصدر: 1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :777-780 1992

    Relation: Proceedings of IEEE International Electron Devices Meeting

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  8. 8
    مؤتمر
    Can GaAs ICs achieve Si VLSI reliability?

    المؤلفون: MacWilliams, K.P., Janousek, B.K.

    المصدر: GaAs IC Symposium Technical Digest 1992 Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE. :149-152 1992

    Relation: 1992 GaAs IC Symposium Technical Digest

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  9. 9
    مؤتمر
    Dependence of LDD device optimization on stressing parameters at 77 K

    المؤلفون: Song, M., Cable, J.S., MacWilliams, K.P., Woo, J.C.S.

    المصدر: International Technical Digest on Electron Devices Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International. :223-226 1990

    Relation: International Technical Digest on Electron Devices

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  10. 10
    دورية أكاديمية
    Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

    المؤلفون: Song, M., MacWilliams, K.P., Woo, J.C.S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 44(2):268-276 Feb, 1997

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