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المؤلفون: Wei Liu, Christopher Lazik, C. R. Brundle, Yuri Uritsky, Malcolm J. Bevan, Paul F. Ma, Tang Wei, Bobek Sarah Michelle, Kulshreshtha Prashant Kumar, Venkatasubramanian Eswaranand, Ghazal Saheli
المصدر: Journal of Electron Spectroscopy and Related Phenomena. 231:57-67
مصطلحات موضوعية: Radiation, 010304 chemical physics, business.industry, NAND gate, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Characterization (materials science), Amorphous solid, Flash (photography), X-ray photoelectron spectroscopy, 0103 physical sciences, Optoelectronics, Wafer, Physical and Theoretical Chemistry, 0210 nano-technology, business, Spectroscopy, Dram, High-κ dielectric
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40c3db3351630b06da5eb3dece902a18
https://doi.org/10.1016/j .elspec.2018.03.007 -
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المؤلفون: B. McDougal, J. Borniquel, Atif Noori, Swenberg Johanes F, Houda Graoui, Maitreyee Mahajani, L. Date, Steven Hung, Roger Curtis, Liu Patricia M, B. Kanan, Malcolm J. Bevan, Osbert Chan, Chi-Nung Ni, David Chu
المصدر: ECS Transactions. 33:403-409
مصطلحات موضوعية: Materials science, Fabrication, business.industry, Transistor, Gate dielectric, Dielectric, law.invention, Hysteresis, Stack (abstract data type), law, Degradation (geology), Optoelectronics, business, High-κ dielectric
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المؤلفون: P. Liu, Suman Datta, G. Saheli, Souvik Mahapatra, T. Sato, Swenberg Johanes F, K. Joshi, Brendan McDougall, Malcolm J. Bevan, Steven Hung, D. Chu, Christopher Lazik, Atif Noori, Subhadeep Mukhopadhyay, Chi-Nung Ni, L. Date, Bijesh Rajamohanan, A. Wei, Adam Brand
المصدر: IEEE Electron Device Letters. 34:3-5
مصطلحات موضوعية: Flicker Noise, Mobility, Negative-Bias Temperature Instability (Nbti), Interlayer (Il) Scaling, Materials science, business.industry, Positive-Bias Temperature Instability (Pbti), Bilayer, Dciv, Gate stack, Equivalent oxide thickness, Nanotechnology, Equivalent Oxide Thickness (Eot) Scaling, Electronic, Optical and Magnetic Materials, Hkmg, CMOS, Thermal, Monolayer, Gate Leakage, Optoelectronics, Electrical and Electronic Engineering, business, Scaling, Leakage (electronics)
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المؤلفون: Swenberg Johanes F, Chorng-Ping Chang, Suman Datta, Adam Brand, B. McDougal, Steven Hung, Souvik Mahapatra, M. Mahajani, L. Date, Bijesh Rajamohanan, Atif Noori, P. Liu, T. Sato, H. Hong, Christopher Lazik, D. Chu, Chi-Nung Ni, Subhadeep Mukhopadhyay, K. Joshi, Malcolm J. Bevan
المصدر: 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
مصطلحات موضوعية: Interface layer, Materials science, business.industry, Oxide, Gate stack, Analytical chemistry, Dielectric, Atomic layer deposition, chemistry.chemical_compound, chemistry, Thermal, Trap density, Optoelectronics, business, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::95fd40a8a83632b1509224874795a04b
https://doi.org/10.1109/vlsi-tsa.2013.6545613 -
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المؤلفون: Roger Curtis, Wei Liu, Steven Hung, Houda Graoui, Theresa Kramer Guarini, Malcolm J. Bevan
المصدر: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
مصطلحات موضوعية: Interface layer, Materials science, business.industry, Radical oxidation, Dielectric, Metal, CMOS, Rapid thermal processing, visual_art, visual_art.visual_art_medium, Optoelectronics, business, Metal gate, High-κ dielectric
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e3eb97c19ad8ba3cb35b42cd5995b67f
https://doi.org/10.1109/rtp.2010.5624252