المؤلفون: Soderbarg, A., Edholm, B., Olsson, J., Masszi, F., Eklund, K.H.

المصدر: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :975-978 1995

Relation: Proceedings of International Electron Devices Meeting

المؤلفون: Isberg, M., Jonsson, P., Masszi, F., Vojdani, F., Bleichner, H., Rosling, M., Nordlander, E.

المصدر: Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Power semiconductor devices and integrated circuits Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on. :281-286 1994

Relation: Proceedings of ISPSD'94 International Symposium on Power Semiconductor Devices and IC's

المؤلفون: Bleichner, H., Rosling, M., Jonsson, P., Masszi, F., Vojdani, F., Isberg, M., Nordlander, E.

المصدر: ESSDERC '93: 23rd European solid State Device Research Conference Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European. :895-898 Sep, 1993

Relation: Proceedings of the 23rd European Solid State Device Research Conference

المؤلفون: Magnusson, U., Edholm, B., Masszi, F.

المصدر: ESSDERC '91: 21st European Solid State Device Research Conference Solid State Device Research Conference, 1991. ESSDERC '91. 21st European. :341-344 Sep, 1991

Relation: Proceedings of the 21st European Solid State Device Research Conference - ESSDERC '91

المؤلفون: Velmre, E.^Aff3, Udal, A.^Aff3, Masszi, F.^Aff4, Nordlander, E.^{Aff4, Aff5}

المساهمون: Ryssel, Heiner, editor^{Aff1, Aff2}, Pichler, Peter, editor^Aff1

المصدر: Simulation of Semiconductor Devices and Processes : Vol. 6. :340-343

المؤلفون: Tarnay, K.^Aff3, Masszi, F.^Aff4, Kocsis, T.^Aff3, Poppe, A.^Aff3

المساهمون: Ryssel, Heiner, editor^{Aff1, Aff2}, Pichler, Peter, editor^Aff1

المصدر: Simulation of Semiconductor Devices and Processes : Vol. 6. :238-241

المؤلفون: Tarnay, K.^{Aff2, Aff3}, Masszi, F.^Aff2, Poppe, A.^Aff3, Verhás, P.^Aff3, Kocsis, T.^Aff3, Kohári, Zs.^Aff3

المساهمون: Selberherr, Siegfried, editor^Aff1, Stippel, Hannes, editor^Aff1, Strasser, Ernst, editor^Aff1

المصدر: Simulation of Semiconductor Devices and Processes : Vol.5. :477-480

المؤلفون: Velmre, E.^Aff2, Koel, A.^Aff2, Masszi, F.^Aff2

المساهمون: Selberherr, Siegfried, editor^Aff1, Stippel, Hannes, editor^Aff1, Strasser, Ernst, editor^Aff1

المصدر: Simulation of Semiconductor Devices and Processes : Vol.5. :433-436

المؤلفون: Masszi, F., Tove, P.-A., Bohlin, K., Norde, H.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 33(4):469-476 Apr, 1986

المؤلفون: Isberg, M., Jonsson, P., Keskitalo, N., Masszi, F., Bleicher, H.

المصدر: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1997, Vol. 16, Issue 3, pp. 144-156.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/03321649710367585