يعرض 1 - 10 نتائج من 15 نتيجة بحث عن '"Maurizio Puzzanghera"', وقت الاستعلام: 0.86s تنقيح النتائج
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    المصدر: I.E.E.E. transactions on electron devices 65 (2018): 629–635. doi:10.1109/TED.2017.2779602
    info:cnr-pdr/source/autori:Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Menozzi, Roberto/titolo:Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p(+)-i-n Diode With Al+ Ion-Implanted Emitters/doi:10.1109%2FTED.2017.2779602/rivista:I.E.E.E. transactions on electron devices/anno:2018/pagina_da:629/pagina_a:635/intervallo_pagine:629–635/volume:65

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    المصدر: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, pp. 391–394, 25-29 September 2016
    info:cnr-pdr/source/autori:Fedeli P.; Puzzanghera M.; Moscatelli F.; Minamisawa R.A.; Alfieri G.; Grossner U.; Nipoti R./congresso_nome:11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016/congresso_luogo:/congresso_data:25-29 September 2016/anno:2017/pagina_da:391/pagina_a:394/intervallo_pagine:391–394

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    المصدر: I.E.E.E. transactions on electron devices 66 (2019): 3028–3033. doi:10.1109/TED.2019.2917534
    info:cnr-pdr/source/autori:Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta/titolo:The role of defects on forward current in 4H-SiC p-i-n diodes/doi:10.1109%2FTED.2019.2917534/rivista:I.E.E.E. transactions on electron devices/anno:2019/pagina_da:3028/pagina_a:3033/intervallo_pagine:3028–3033/volume:66

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