يعرض 1 - 10 نتائج من 33 نتيجة بحث عن '"McGarrity, James"', وقت الاستعلام: 1.20s تنقيح النتائج
  1. 1
    مؤتمر
    Space and Terrestrial Radiation Response of Silicon Carbide Power MOSFETs

    المؤلفون: Akturk, Akin, McGarrity, James M., Wilkins, Richard, Markowski, Adam, Cusack, Brendan

    المصدر: 2017 IEEE Radiation Effects Data Workshop (REDW) Radiation Effects Data Workshop (REDW), 2017 IEEE. :1-5 Jul, 2017

    Relation: 2017 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2017)

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  2. 2
    مؤتمر
    The effects of radiation on the terrestrial operation of SiC MOSFETs

    المؤلفون: Akturk, Akin, McGarrity, James, Goldsman, Neil, Lichtenwalner, Daniel J., Hull, Brett, Grider, Dave, Wilkins, Richard

    المصدر: 2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :2B.1-1-2B.1-5 Mar, 2018

    Relation: 2018 IEEE International Reliability Physics Symposium (IRPS)

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  3. 3
    مؤتمر
    Reliability studies of SiC vertical power MOSFETs

    المؤلفون: Lichtenwalner, Daniel J., Hull, Brett, Van Brunt, Edward, Sabri, Shadi, Gajewski, Donald A., Grider, Dave, Allen, Scott, Palmour, John W., Akturk, Akin, McGarrity, James

    المصدر: 2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :2B.2-1-2B.2-6 Mar, 2018

    Relation: 2018 IEEE International Reliability Physics Symposium (IRPS)

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  4. 4
    مؤتمر
    Time-of-flight mobility measurements

    المؤلفون: Winokur, Peter S., McGarrity, James M., Roush, Marvin L., Silverman, Joseph

    المصدر: Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1973 Electrical Insulation & Dielectric Phenomena - Annual Report 1973, Conference on. :120-129 Oct, 1973

    Relation: Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1973

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  5. 5
    دورية أكاديمية
    Considerations for Hardening MOS Devices and Circuits for Low Radiation Doses

    المؤلفون: McGarrity, James M.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 27(6):1739-1744 Dec, 1980

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  6. 6
    دورية أكاديمية
    Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors

    المؤلفون: Boesch, H. Edwin, McLean, F. Barry, McGarrity, James M., Winokur, Peter S.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 25(6):1239-1245 Dec, 1978

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  7. 7
    دورية أكاديمية
    Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices

    المؤلفون: Lelis, Aivars, Habersat, Daniel, Olaniran, Fatimat, Simons, Brian, McGarrity, James, McLean, F. Barry, Goldsman, Neil

    المصدر: MRS Online Proceedings Library. 911(1)

    Find this article in full text from Springer Verlag.
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  8. 8
    دورية أكاديمية
    A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges.

    المؤلفون: Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

    المصدر: Journal of Applied Physics; 8/15/2006, Vol. 100 Issue 4, p044516, 7p, 3 Diagrams, 3 Graphs

    مصطلحات موضوعية: SILICON carbide, METAL oxide semiconductors, FIELD-effect transistors, COULOMB functions, ELECTRON mobility

    Find this article in full text from Scitation.
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  9. 9
    دورية أكاديمية
    Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor.

    المؤلفون: Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

    المصدر: Journal of Applied Physics; 8/15/2006, Vol. 100 Issue 4, p044515, 8p, 2 Charts, 13 Graphs

    مصطلحات موضوعية: SILICON carbide, METAL oxide semiconductors, FIELD-effect transistors, COULOMB functions, ELECTRON mobility

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  10. 10
    دورية أكاديمية
    Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors.

    المؤلفون: Powell, Stephen K., Goldsman, Neil, McGarrity, James M., Bernstein, Joseph, Scozzie, Charles J., Lelis, Aivars

    المصدر: Journal of Applied Physics; 10/1/2002, Vol. 92 Issue 7, p4053, 9p, 1 Chart, 7 Graphs

    مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, SILICON carbide

    Find this article in full text from Scitation.
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