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1مؤتمر
المؤلفون: Md. Shafayat Hossain, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Fahim Ur Rahman, Zaman, Rifat, Khosru, Quazi D. M.
المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on. :1-3 Dec, 2012
Relation: 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
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2مؤتمر
المؤلفون: Md. Obaidul Hossen, Md. Shafayat Hossain, Saeed Uz Zaman Khan, Fahim Ur Rahman, Zaman, Rifat, Khosru, Quazi D. M.
المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on. :1-3 Dec, 2012
Relation: 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
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3
المؤلفون: Md Obaidul Hossen, Ankit Kaul, Eriko Nurvitadhi, Mondira Deb Pant, Ravi Gutala, Aravind Dasu, Muhannad S. Bakir
المصدر: IEEE Transactions on Components, Packaging and Manufacturing Technology. 12:1824-1831
مصطلحات موضوعية: Electrical and Electronic Engineering, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials
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4
المؤلفون: Fahim ur Rahman, Saeed Uz Zaman Khan, Quazi D. M. Khosru, Md. Obaidul Hossen, Md. Shafayat Hossain, Rifat Zaman
المصدر: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 28:389-403
مصطلحات موضوعية: Materials science, Reverse short-channel effect, business.industry, Gate dielectric, Nanowire, Electrical engineering, Short-channel effect, Drain-induced barrier lowering, Dielectric, Capacitance, Computer Science Applications, Threshold voltage, Modeling and Simulation, Optoelectronics, Electrical and Electronic Engineering, business
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5
المؤلفون: Md. Shafayat Hossain, Saeed Uz Zaman Khan, Rifat Zaman, Quazi D. M. Khosru, Md. Obaidul Hossen, Fahim ur Rahman
المصدر: 8th International Conference on Electrical and Computer Engineering.
مصطلحات موضوعية: Fabrication, Materials science, Condensed matter physics, Ballistic conduction, MOSFET, Nanowire, Solver, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Wave function, Scaling, Quantum
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::48c065bea348a41a9901f111713a094b
https://doi.org/10.1109/icece.2014.7026963 -
6
المؤلفون: Rifat Zaman, Saeed Uz Zaman Khan, Md. Shafayat Hossain, Quazi D. M. Khosru, Md. Obaidul Hossen, Fahim Ur Rahman
المصدر: 2014 2nd International Conference on Electronic Design (ICED).
مصطلحات موضوعية: Materials science, Channel length modulation, Differential capacitance, business.industry, Short-channel effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Capacitance, Computer Science::Hardware Architecture, Quantum capacitance, Gate oxide, MOSFET, Electronic engineering, Optoelectronics, business, AND gate
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::63748e53bace4cc809ebcd4b6cbd4c0c
https://doi.org/10.1109/iced.2014.7015777 -
7
المؤلفون: Quazi D. M. Khosru, Fahim ur Rahman, Rifat Zaman, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Md. Shafayat Hossain
المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC).
مصطلحات موضوعية: Materials science, Doping, Nanowire, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Computational physics, Threshold voltage, medicine.anatomical_structure, Atlas (anatomy), MOSFET, medicine, Electronic engineering, Boundary value problem, Poisson's equation, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3daa23e8a4758a597361dca4a60d061e
https://doi.org/10.1109/edssc.2012.6482770 -
8
المؤلفون: Md. Obaidul Hossen, R. Zaman, Quazi D. M. Khosru, Saeed Uz Zaman Khan, Md. Shafayat Hossain, F. U. Rahman
المصدر: 2012 7th International Conference on Electrical and Computer Engineering.
مصطلحات موضوعية: Materials science, business.industry, Transistor, Nanowire, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, law.invention, Threshold voltage, chemistry.chemical_compound, chemistry, law, Quantum mechanics, MOSFET, Optoelectronics, business, Wave function, Quantum, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5442b7a480d920106085ef5c8d9e3b3d
https://doi.org/10.1109/icece.2012.6471641