يعرض 1 - 8 نتائج من 8 نتيجة بحث عن '"Md Obaidul Hossen"', وقت الاستعلام: 0.88s تنقيح النتائج
  1. 1
    مؤتمر
    Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification

    المؤلفون: Md. Shafayat Hossain, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Fahim Ur Rahman, Zaman, Rifat, Khosru, Quazi D. M.

    المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on. :1-3 Dec, 2012

    Relation: 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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  2. 2
    مؤتمر
    Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric

    المؤلفون: Md. Obaidul Hossen, Md. Shafayat Hossain, Saeed Uz Zaman Khan, Fahim Ur Rahman, Zaman, Rifat, Khosru, Quazi D. M.

    المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on. :1-3 Dec, 2012

    Relation: 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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  3. 3
    Analysis of Power Delivery Network (PDN) in Bridge-Chips for 2.5-D Heterogeneous Integration

    المؤلفون: Md Obaidul Hossen, Ankit Kaul, Eriko Nurvitadhi, Mondira Deb Pant, Ravi Gutala, Aravind Dasu, Muhannad S. Bakir

    المصدر: IEEE Transactions on Components, Packaging and Manufacturing Technology. 12:1824-1831

    مصطلحات موضوعية: Electrical and Electronic Engineering, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e8d814144c6164ccb809bd63705888f0
    https://doi.org/10.1109/tcpmt.2022.3223687

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  4. 4
    Impact of high-κgate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate-all-around nanowire transistor

    المؤلفون: Fahim ur Rahman, Saeed Uz Zaman Khan, Quazi D. M. Khosru, Md. Obaidul Hossen, Md. Shafayat Hossain, Rifat Zaman

    المصدر: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 28:389-403

    مصطلحات موضوعية: Materials science, Reverse short-channel effect, business.industry, Gate dielectric, Nanowire, Electrical engineering, Short-channel effect, Drain-induced barrier lowering, Dielectric, Capacitance, Computer Science Applications, Threshold voltage, Modeling and Simulation, Optoelectronics, Electrical and Electronic Engineering, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::18b996f1ec4a2fc5f50812cb55656f85
    https://doi.org/10.1002/jnm.2015

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  5. 5
    Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET

    المؤلفون: Md. Shafayat Hossain, Saeed Uz Zaman Khan, Rifat Zaman, Quazi D. M. Khosru, Md. Obaidul Hossen, Fahim ur Rahman

    المصدر: 8th International Conference on Electrical and Computer Engineering.

    مصطلحات موضوعية: Fabrication, Materials science, Condensed matter physics, Ballistic conduction, MOSFET, Nanowire, Solver, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Wave function, Scaling, Quantum

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::48c065bea348a41a9901f111713a094b
    https://doi.org/10.1109/icece.2014.7026963

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  6. 6
    Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET

    المؤلفون: Rifat Zaman, Saeed Uz Zaman Khan, Md. Shafayat Hossain, Quazi D. M. Khosru, Md. Obaidul Hossen, Fahim Ur Rahman

    المصدر: 2014 2nd International Conference on Electronic Design (ICED).

    مصطلحات موضوعية: Materials science, Channel length modulation, Differential capacitance, business.industry, Short-channel effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Capacitance, Computer Science::Hardware Architecture, Quantum capacitance, Gate oxide, MOSFET, Electronic engineering, Optoelectronics, business, AND gate

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::63748e53bace4cc809ebcd4b6cbd4c0c
    https://doi.org/10.1109/iced.2014.7015777

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  7. 7
    Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification

    المؤلفون: Quazi D. M. Khosru, Fahim ur Rahman, Rifat Zaman, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Md. Shafayat Hossain

    المصدر: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC).

    مصطلحات موضوعية: Materials science, Doping, Nanowire, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Computational physics, Threshold voltage, medicine.anatomical_structure, Atlas (anatomy), MOSFET, medicine, Electronic engineering, Boundary value problem, Poisson's equation, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3daa23e8a4758a597361dca4a60d061e
    https://doi.org/10.1109/edssc.2012.6482770

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  8. 8
    Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect

    المؤلفون: Md. Obaidul Hossen, R. Zaman, Quazi D. M. Khosru, Saeed Uz Zaman Khan, Md. Shafayat Hossain, F. U. Rahman

    المصدر: 2012 7th International Conference on Electrical and Computer Engineering.

    مصطلحات موضوعية: Materials science, business.industry, Transistor, Nanowire, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, law.invention, Threshold voltage, chemistry.chemical_compound, chemistry, law, Quantum mechanics, MOSFET, Optoelectronics, business, Wave function, Quantum, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5442b7a480d920106085ef5c8d9e3b3d
    https://doi.org/10.1109/icece.2012.6471641

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