-
1
المؤلفون: Masayuki Ichige, Atsuhiro Sato, Masaaki Higashitani, M. Momodomi, Hisataka Meguro, Shigeki Takahashi, H. Iizuka, Tadashi Iguchi, R. Shirota, N. Arai, T. Miwa, Takeshi Kamigaichi, N. Kawai, S. Miyazaki, S. Tamon, T. Minami, Michiharu Matsui, Tuan Pham, Yoshiaki Takeuchi, G. Hemink, H. Kamata, Y. Ishibashi, Kikuko Sugimae, Hiroyuki Kutsukake, S. Mori, Masanobu Saito
المصدر: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Nand flash memory, Transistor, NAND gate, law.invention, Flash (photography), law, Gigabit, Shallow trench isolation, Charge trap flash, Electronic engineering, Optoelectronics, Node (circuits), business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1a39d948fdea82af3af180691174d3b3
https://doi.org/10.1109/vlsit.2003.1221100