يعرض 1 - 10 نتائج من 78 نتيجة بحث عن '"Ming Hsien Tu"', وقت الاستعلام: 0.90s تنقيح النتائج
  1. 1
    مؤتمر
    Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

    المؤلفون: Ming-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Shyh-Jye Jou, Chuang, Ching-Te, Wei Hwang

    المصدر: Proceedings of Technical Program of 2012 VLSI Design, Automation and Test VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on. :1-4 Apr, 2012

    Relation: 2012 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

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  2. 2
    مؤتمر
    A reconfigurable MAC architecture implemented with mixed-Vt standard cell library

    المؤلفون: Li-Rong Wang, Yi-Wei Chiu, Chia-Lin Hu, Ming-Hsien Tu, Shyh-Jye Jou, Chung-Len Lee

    المصدر: 2008 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2008 IEEE International Symposium on. :3426-3429 May, 2008

    Relation: 2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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  3. 3
    A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist

    المؤلفون: Wei-Sheng Peng, Kuen-Di Lee, Po-Tsang Huang, Shang-Lin Wu, Sheng-Chi Lung, Ming-Hsien Tu, Ching-Te Chuang, Huan-Shun Huang, Kuang-Yu Li, Yung-Shin Kao, Wei Hwang

    المصدر: IEEE Transactions on Circuits and Systems I: Regular Papers. 64:1791-1802

    مصطلحات موضوعية: Engineering, Power gating, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 02 engineering and technology, Chip, 020202 computer hardware & architecture, CMOS, Dynamic demand, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Inverter, Static random-access memory, Electrical and Electronic Engineering, business, Low voltage, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::860ca831f5c59066616d86125b97cbea
    https://doi.org/10.1109/tcsi.2017.2681738

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  4. 4
    A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

    المؤلفون: Ming Hsien Tu, Shang-Lin Wu, Yung Shin Kao, Ching-Te Chuang, Huan Shun Huang, Kuen Di Lee, Chien-Yu Lu

    المصدر: Microelectronics Journal. 51:89-98

    مصطلحات موضوعية: 020203 distributed computing, Subthreshold conduction, Sense amplifier, Computer science, 020208 electrical & electronic engineering, General Engineering, 02 engineering and technology, PMOS logic, Soft error, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Static random-access memory, Standby power, NMOS logic

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7fac3f497ce2ad9b66f910ad82667d7e
    https://doi.org/10.1016/j.mejo.2016.02.011

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  5. 5
    A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist

    المؤلفون: Shyh-Jye Jou, Chung-Ping Huang, Yung-Shin Kao, Ya-Ping Wu, Chien-Yu Lu, Paul-Sen Kan, Huan-Shun Huang, Kuen-Di Lee, Ming-Hsien Tu, Ching-Te Chuang

    المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23:958-962

    مصطلحات موضوعية: Random access memory, business.industry, Subthreshold conduction, Computer science, Electrical engineering, Chip, Soft error, CMOS, Hardware and Architecture, Electronic engineering, Microelectronics, Static random-access memory, Electrical and Electronic Engineering, business, Software

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7934e8842a2b550eaf80744da22553e4
    https://doi.org/10.1109/tvlsi.2014.2318518

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  6. 6
    A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist

    المؤلفون: Yong Jyun Hu, Wei Hwang, Paul Sen Kan, Ming-Hsien Tu, Ching-Te Chuang, Chen Chien Hen, Li Wei Chu, Yang Hao I, Shyh-Jye Jou, Nan Chun Lien

    المصدر: IEEE Transactions on Circuits and Systems I: Regular Papers. 61:3416-3425

    مصطلحات موضوعية: Boosting (machine learning), Computer science, business.industry, Ripple, Chip, Soft error, CMOS, Electronic engineering, Test light, Static random-access memory, Electrical and Electronic Engineering, Performance improvement, business, Computer hardware

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6831aec55e7eb966d6c5c6aa1f0bf99d
    https://doi.org/10.1109/tcsi.2014.2336531

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  7. 7
    40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist

    المؤلفون: Ming-Hsien Tu, Ching-Te Chuang, Jun Kai Zhao, Shyh-Jye Jou, Yuan Hua Chu, Yu-Hao Hu, Yi Wei Chiu

    المصدر: IEEE Transactions on Circuits and Systems I: Regular Papers. 61:2578-2585

    مصطلحات موضوعية: Soft error, CMOS, Interleaving, Computer science, Subthreshold conduction, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering, Chip, Threshold voltage, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::81a393fc6fee30ee5de1fc14e8536798
    https://doi.org/10.1109/tcsi.2014.2332267

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  8. 8
    A note on the extended dispersionless Toda hierarchy

    المؤلفون: Niann-Chern Lee, Ming-Hsien Tu

    المصدر: Theoretical and Mathematical Physics. 175:475-488

    مصطلحات موضوعية: Dispersionless equation, Algebra, Catalan number, Pure mathematics, Nonlinear Sciences::Exactly Solvable and Integrable Systems, Topological quantum field theory, Recurrence relation, Hierarchy (mathematics), Statistical and Nonlinear Physics, Direct consequence, Mathematical Physics, Mathematics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e5190ffcde1037cd514ebe7c1ecb4400
    https://doi.org/10.1007/s11232-013-0039-8

    Find this article in full text from Springer Verlag.
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  9. 9
    A 0.33-V, 500-kHz, 3.94-$\mu\hbox{W}$ 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

    المؤلفون: Ching-Te Chuang, Yung-Shin Kao, Ya-Ping Wu, Huan-Shun Huang, Shyh-Jye Jou, Wei Hwang, Chien-Yu Lu, Ming-Hsien Tu, Yuh-Jiun Lin, Hao-I Yang, Kuen-Di Lee

    المصدر: IEEE Transactions on Circuits and Systems II: Express Briefs. 59:863-867

    مصطلحات موضوعية: Materials science, Negative bit line, business.industry, Subthreshold conduction, Ripple, 500 kHz, CMOS, Redundancy (engineering), Electronic engineering, Optoelectronics, Static random-access memory, Electrical and Electronic Engineering, Performance improvement, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::59c2a971d2c5d63e493c84ad8901fcee
    https://doi.org/10.1109/tcsii.2012.2231017

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  10. 10
    28nm ultra-low power near-/sub-threshold first-in-first-out (FIFO) memory for multi-bio-signal sensing platforms

    المؤلفون: Po-Tsang Huang, Ming-Hsien Tu, Ching-Te Chuang, Shang-Lin Wu, Wei Hwang, Wei-Shen Hsu, Ming-Yu Yin

    المصدر: 2016 International Symposium on VLSI Design, Automation and Test (VLSI-DAT).

    مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, Sense amplifier, business.industry, FIFO (computing and electronics), 020208 electrical & electronic engineering, Transistor, Semiconductor memory, 02 engineering and technology, 020202 computer hardware & architecture, law.invention, FIFO and LIFO accounting, CMOS, law, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Static random-access memory, business, Power control

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::02cd85cdbcc2856aedc541c576ceac79
    https://doi.org/10.1109/vlsi-dat.2016.7482551

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