-
1مؤتمر
المؤلفون: Ushikil, T., Mo Chiun Yu, Hirano, Y., Shimada, H., Morita, M., Ohmi, T.
المصدر: International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :117-120 1996
Relation: International Electron Devices Meeting. Technical Digest
-
2دورية أكاديمية
المؤلفون: Chien-Hao Chen, Yean-Kuen Fang, Shyh-Fann Ting, Wen-Tse Hsieh, Chih-Wei Yang, Tzu-Hsuan Hsu, Mo-Chiun Yu, Tze-Liang Lee, Shih-Chang Chen, Chen-Hua Yu, Mong-Song Liang
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 49(5):840-846 May, 2002
-
3دورية أكاديمية
المؤلفون: Chein-Hao Chen, Yean-Kuen Fang, Chih-Wei Yang, Shyh-Fann Ting, Yong-Shiuan Tsair, Ming-Fang Wang, Tuo-Hong Hou, Mo-Chiun Yu, Shih-Chang Chen, Jang, S.M., Yu, D.C.H., Mong-Song Liang
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 48(12):2769-2776 Dec, 2001
-
4دورية أكاديمية
المؤلفون: Kuo-Nan Yang, Huan-Tsung Huang, Ming-Jer Chen, Yeou-Ming Lin, Mo-Chiun Yu, Jang, S.S.A., Yu, D.C.H., Mong-Song Liang
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 48(12):2790-2795 Dec, 2001
-
5دورية أكاديمية
المؤلفون: Kuo-Nan Yang, Huan-Tsung Huang, Ming-Chin Chang, Che-Min Chu, Yuh-Shu Chen, Ming-Jer Chen, Yeou-Ming Lin, Mo-Chiun Yu, Jang, S.M., Yu, C.H., Liang, M.S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(11):2161-2166 Nov, 2000
-
6دورية أكاديمية
المؤلفون: Ushiki, T., Kawai, K., Mo-Chiun Yu, Shinohara, T., Ino, K., Morita, M., Ohmi, T.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 45(11):2349-2354 Nov, 1998
-
7دورية أكاديمية
المؤلفون: Ushiki, T., Mo-Chiun Yu, Hirano, Y., Shimada, H., Morita, M., Ohmi, T.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 44(9):1467-1472 Sep, 1997
-
8
المؤلفون: T. Y. Lin, Ming-Fang Wang, Shyh-Fann Ting, C.H. Yu, Yean-Kuen Fang, Mong-Song Liang, W. D. Wang, Liang-Gi Yao, Mo-Chiun Yu, S. C. Chen, Chia-Lin Chen, C. H. Chen, Chih-Wei Yang
المصدر: Solid-State Electronics. 47:751-754
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Equivalent oxide thickness, Time-dependent gate oxide breakdown, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, PMOS logic, chemistry.chemical_compound, chemistry, Gate oxide, MOSFET, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, NMOS logic, Leakage (electronics)
-
9
المؤلفون: Chih-Wei Yang, Shih-Chang Chen, Tze-Liang Lee, Wen-Tse Hsieh, Tzu-Hsuan Hsu, Mo-Chiun Yu, C. H. Chen, Chen-Hua Yu, Shyh-Fann Ting, Yean-Kuen Fang, Mong-Song Liang
المصدر: IEEE Transactions on Electron Devices. 49:840-846
مصطلحات موضوعية: Materials science, business.industry, Transconductance, Gate dielectric, Oxide, Equivalent oxide thickness, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, CMOS, chemistry, MOSFET, Electronic engineering, Remote plasma, Optoelectronics, Electrical and Electronic Engineering, business, Leakage (electronics)
-
10
المؤلفون: Mong-Song Liang, Kuo-Nan Yang, S.S.A. Jang, Yeou-Ming Lin, Huan-Tsung Huang, Mo-Chiun Yu, Douglas Yu, Ming-Jer Chen
المصدر: IEEE Transactions on Electron Devices. 48:2790-2795
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Semiconductor device modeling, Oxide, Time-dependent gate oxide breakdown, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Gate oxide, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business, Quantum tunnelling, Leakage (electronics), Surface states