يعرض 1 - 10 نتائج من 145 نتيجة بحث عن '"Moak J"', وقت الاستعلام: 1.27s تنقيح النتائج
  1. 1
    دورية أكاديمية
    The Utility of Transvaginal Ultrasound After Intrauterine Pregnancy Identification on Transabdominal Ultrasound in Emergency Department Patients

    المؤلفون: Thom C, Kongkatong M, Moak J

    المصدر: Open Access Emergency Medicine, Vol Volume 15, Pp 207-216 (2023)

    مصطلحات موضوعية: ectopic pregnancy, ultrasound, threatened miscarriage, spontaneous miscarriage, yolk sac, subchorionic hemorrhage, Medical emergencies. Critical care. Intensive care. First aid, RC86-88.9

    وصف الملف: electronic resource

    Relation: https://www.dovepress.com/the-utility-of-transvaginal-ultrasound-after-intrauterine-pregnancy-id-peer-reviewed-fulltext-article-OAEM; https://doaj.org/toc/1179-1500

    URL الوصول: https://doaj.org/article/2cca56c9c4fb49f28fdc34c2896ae86f

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  2. 2
    مؤتمر
    Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs

    المؤلفون: Kalna, K., Ayubi-Moak, J. S.

    المصدر: 2012 15th International Workshop on Computational Electronics Computational Electronics (IWCE), 2012 15th International Workshop on. :1-4 May, 2012

    Relation: 2012 15th International Workshop on Computational Electronics (IWCE)

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  3. 3
    مؤتمر
    Mixed-level simulation of opto-electronic devices

    المؤلفون: Bahl, M., Heller, E., Ayubi-Moak, J. S., Ng, W.-C., Scarmozzino, R., Letay, G., Schneider, L.

    المصدر: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Numerical Simulation of Optoelectronic Devices (NUSOD), 2016 International Conference on. :101-102 Jul, 2016

    Relation: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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  4. 4
    دورية أكاديمية
    Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

    المؤلفون: Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S. M., Akis, R., Saraniti, M.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(9):2327-2338 Sep, 2007

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  5. 5
    مؤتمر
    Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach

    المؤلفون: Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K., Goodnick, S. M.

    المصدر: 2009 13th International Workshop on Computational Electronics Computational Electronics, 2009. IWCE '09. 13th International Workshop on. :1-4 May, 2009

    Relation: 13th International Workshop on Computational Electronics (IWCE)

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  6. 6
    مؤتمر
    III-V MOSFETs for Digital Applications with Silicon Co-Integration

    المؤلفون: Kalna, K., Asenov, A., Ayubi-Moak, J. S., Craven, A. J., Droopad, R., Hill, R., Holland, M. C., Li, X., Long, A. R., Longo, P., MacIntyre, D., Passlack, M., Paterson, G., Stanley, C. R., Thoms, S., Zhou, H., Thayne, I. G.

    المصدر: 2008 International Conference on Advanced Semiconductor Devices and Microsystems Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on. :39-46 Oct, 2008

    Relation: 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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  7. 7
    مؤتمر
    Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies

    المؤلفون: Akis, R., Ayubi-Moak, J. S., Faralli, N., Goodnick, S. M., Ferry, D. K., Saraniti, M.

    المصدر: 2008 Device Research Conference Device Research Conference, 2008. :267-268 Jun, 2008

    Relation: 2008 66th Annual Device Research Conference (DRC)

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  8. 8
    مؤتمر
    The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTs

    المؤلفون: Akis, R., Faralli, N., Ferry, D. K., Goodnick, S.M., Saraniti, M., Ayubi-Moak, J. S.

    المصدر: 2008 20th International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on. :1-4 May, 2008

    Relation: 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)

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  9. 9
    مؤتمر
    Parallel 3D FDTD Simulator for Photonic Crystals

    المؤلفون: Ayubi-Moak, J., Goodnick, S., Speyer, G., Stanzione, D., Sortirelis, P.

    المصدر: 2007 DoD High Performance Computing Modernization Program Users Group Conference DoD High Performance Computing Modernization Program Users Group Conference, 2007. :205-210 Jun, 2007

    Relation: 2007 DoD High Performance Computing Modernization Program Users Group Conference

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  10. 10
    دورية أكاديمية
    The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

    المؤلفون: Akis, R., Ayubi-Moak, J. S., Faralli, N., Ferry, D. K., Goodnick, S. M., Saraniti, M.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(4):306-308 Apr, 2008

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