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المؤلفون: Mohamed N. Darwish, Zhang Wenhong, Pan Yin, Longlai Xu, Jun Zeng, Yaohua Wang, Xiaohu Deng, Rui Jin, Kui Pu, Li Li
المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
مصطلحات موضوعية: inorganic chemicals, 010302 applied physics, Materials science, Silicon, business.industry, 020208 electrical & electronic engineering, Doping, Oxide, chemistry.chemical_element, 02 engineering and technology, Insulated-gate bipolar transistor, 01 natural sciences, chemistry.chemical_compound, chemistry, Diffusion process, 0103 physical sciences, Trench, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Boron, Layer (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ee696a5a663540e57d190eb2db80b670
https://doi.org/10.1109/edtm50988.2021.9420908 -
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المؤلفون: Jiang Liu, Wen Fang Du, Mohamed N. Darwish, Zhu Tao, Rui Jin, Yao Hua Wang, Wen Hong Zhang, Kui Pu, Jun Zeng
المصدر: Materials Science Forum. 963:643-646
مصطلحات موضوعية: Reliability (semiconductor), Materials science, High voltage igbt, Mechanics of Materials, business.industry, Mechanical Engineering, Deep trench, Optoelectronics, General Materials Science, Condensed Matter Physics, business, Layer (electronics)
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المؤلفون: Jun Zeng, Shaohua Dong, Rui Jin, Zhang Wenhong, Mohamed N. Darwish, Yaohua Wang, Kui Pu, Longlai Xu
المصدر: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
مصطلحات موضوعية: 010302 applied physics, Physics, Silicon, 020208 electrical & electronic engineering, Doping, chemistry.chemical_element, Order (ring theory), 02 engineering and technology, Insulated-gate bipolar transistor, 01 natural sciences, Threshold voltage, Distribution (mathematics), chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Process optimization, Atomic physics, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fe3faffe9a2f6c99522770f79bfb80da
https://doi.org/10.1109/edtm47692.2020.9117906 -
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المؤلفون: Phil Rutter, Richard K. Williams, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard A. Blanchard
المصدر: IEEE Transactions on Electron Devices. 64:674-691
مصطلحات موضوعية: 010302 applied physics, Fabrication, Materials science, Silicon, business.industry, 020208 electrical & electronic engineering, Electrical engineering, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, VMOS, Logic gate, 0103 physical sciences, Trench, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, Reactive-ion etching, Power MOSFET, business
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المؤلفون: Richard A. Blanchard, Phil Rutter, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard K. Williams
المصدر: IEEE Transactions on Electron Devices. 64:692-712
مصطلحات موضوعية: 010302 applied physics, LDMOS, Engineering, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Schottky diode, Disconnector, 02 engineering and technology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Logic gate, 0103 physical sciences, Trench, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Redundancy (engineering), Electrical and Electronic Engineering, Power MOSFET, business
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المؤلفون: Hong Ha Vuong, P.M. Zeitzoff, T.J. Krutsick, Mohamed N. Darwish, M.R. Pinto, J.L. Lentz
المصدر: IEEE Transactions on Electron Devices. 44:1529-1538
مصطلحات موضوعية: Electron mobility, Mobility model, Materials science, Condensed matter physics, Electric field, MOSFET, Doping, Induced high electron mobility transistor, Charge carrier, Electron, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
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المصدر: Guide to State-of-the-Art Electron Devices
مصطلحات موضوعية: Hardware_GENERAL, business.industry, Computer science, Energy flow, Electrical engineering, Thyristor, Power semiconductor device, Power MOSFET, Current (fluid), business, Avalanche breakdown, Voltage, Power (physics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::233f1c606283a1a8f9d8e8a00e764c6d
https://doi.org/10.1002/9781118517543.ch15 -
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المؤلفون: Peter Lloyd, Janet L. Lentz, Colin C. McAndrew, Michael J. McLennan, Ken Haruta, Kishore Singhal, Sani R. Nassif, Conor S. Rafferty, M.R. Pinto, Peter M. Zeitzoff, Mohamed N. Darwish, Hong-Ha Vuong, Kumud Singhal, Isik C. Kizilyalli
المصدر: Microelectronics Journal. 26:79-97
مصطلحات موضوعية: Engineering, Computer simulation, Process (engineering), business.industry, General Engineering, Interval (mathematics), Integrated circuit, computer.software_genre, law.invention, Reliability engineering, law, Hardware_INTEGRATEDCIRCUITS, Computer Aided Design, Sensitivity (control systems), business, Technology CAD, computer, Simulation, Design technology
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المؤلفون: Mohamed N. Darwish, M.A. Shibib
المصدر: IEEE Transactions on Electron Devices. 38:1600-1604
مصطلحات موضوعية: LDMOS, Engineering, business.industry, Transistor, Electrical engineering, Thyristor, Insulated-gate bipolar transistor, Integrated circuit, Electronic, Optical and Magnetic Materials, law.invention, Switching time, law, Electronic engineering, Power semiconductor device, Electrical and Electronic Engineering, business, Voltage
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المؤلفون: Kuo-In Chen, Qufei Chen, Frederik P. Giles, Kam Hong Lui, Deva Pattanayak, King Owyang, Ben Chan, Kyle Santa Clara Terrill, Christina Yue, Mohamed N. Darwish
المصدر: ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Chemical vapor deposition, chemistry.chemical_compound, chemistry, Gate oxide, Trench, Figure of merit, Optoelectronics, Power semiconductor device, LOCOS, Power MOSFET, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::77e5c7a906b09b0f0e73f377b958d8b6
https://doi.org/10.1109/ispsd.2003.1225222