يعرض 1 - 10 نتائج من 39 نتيجة بحث عن '"Moon-han Park"', وقت الاستعلام: 0.86s تنقيح النتائج
  1. 1
    مؤتمر
    Highly controllable cyclic selective epitaxial growth (CySEG) for 65nm CMOS technology and beyond

    المؤلفون: Seung Hwan Lee, Dong Suk Shin, Hwa Sung Rhee, Tetsuji Ueno, Ho Lee Moon Han Park, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :1051-1054 2004

    Relation: 2004 International Electron Devices Meeting

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  2. 2
    مؤتمر
    Mass-productive ultra-low temperature ALD SiO/sub 2/ process promising for sub-90 nm memory and logic devices

    المؤلفون: Jae-Eun Park, Ja-Hum Ku, Joo-Won Lee, Jong-ho Yang, Kang-Soo Chu, Seung-Hwan Lee, Moon-Han Park, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Byoung-Ha Cho, Byoung-Chul Kim, Cheol-Ho Shin

    المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :229-232 2002

    Relation: IEEE International Electron Devices Meeting

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  3. 3
    مؤتمر
    Correlation between gate oxide reliability and the profile of the trench top corner in Shallow Trench Isolation (STI)

    المؤلفون: Tai-Su Park, Yu Gyun Shin, Han Sin Lee, Moon Han Park, Sang Dong Kwon, Ho Kyu Kang, Young Bum Koh, Moon Yong Lee

    المصدر: International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :747-750 1996

    Relation: International Electron Devices Meeting. Technical Digest

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  4. 4
    مؤتمر
    Effective reduction of threshold voltage variability and standby leakage using advanced co-implantation and laser anneal for low power applications

    المؤلفون: Ho Lee, Hwa Sung Rhee, Ji Hye Yi, Myung Sun Kim, Hoi Sung Chung, Min Sun Kim, Sun Me Lim, Yong Shik Kim, Moon Han Park, Nae-In Lee, Jong Shik Yoon

    المصدر: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008

    Relation: 2008 IEEE International Electron Devices Meeting (IEDM)

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  5. 5
    مؤتمر
    High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applications

    المؤلفون: Yong-kuk Jeong, Seok-jun Won, Dae-jin Kwon, Min-woo Song, Weon-hong Kim, Moon-han Park, Joo-hyun Jeong, Han-su Oh, Ho-kyu Kang, Kwang-pyuk Suh

    المصدر: Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. VLSI technology VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on. :222-223 2004

    Relation: 2004 Symposium on VLSI Technology. Digest of Technical Papers

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  6. 6
    مؤتمر
    Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 /spl Aring/ on conventional metal electrode

    المؤلفون: Seok-Jun Won, Yong-Kuk Jeong, Dae-Jin Kwon, Moon-Han Park, Ho-Kyu Kang, Kwang-Pyuk Suh, Hong-Ki Kim, Jae-Hwan Ka, Kwan-Young Yun, Duck-Hyung Lee, Dae-Youn Kim, Yong-Min Yoo, Choon-Soo Lee

    المصدر: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :23-24 2003

    Relation: 2003 Symposium on VLSI Technology. Digest of Technical Papers

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  7. 7
    مؤتمر
    Ultimate solution for low thermal budget gate spacer and etch stopper to retard short channel effect in sub-90 nm devices

    المؤلفون: Jong-Ho Yang, Jae-Eun Park, Joo-Won Lee, Kang-Soo Chu, Ja-Hum Ku, Moon-Han Park, Nae-In Lee, Hee-Sung Kang, Myung-Hwan Oh, Jun-Ha Lee, Ho-Kyu Kang, Kwang-Pyuk Suh

    المصدر: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :55-56 2003

    Relation: 2003 Symposium on VLSI Technology. Digest of Technical Papers

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  8. 8
    مؤتمر
    Void free and low stress shallow trench isolation technology using P-SOG for sub 0.1 /spl mu/m device

    المؤلفون: Jin-Hwa Heo, Soo-Jin Hong, Dong-Ho Ahn, Hyun-Duk Cho, Moon-Han Park, Fujihara, K., U-In Chung, Yong-Chul Oh, Joo-Tae Moon

    المصدر: 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) VLSI technology VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on. :132-133 2002

    Relation: 2002 Symposium on VLSI Technology Digest of Technical Papers

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  9. 9
    مؤتمر
    An optimized densification of the filled oxide for quarter micron shallow trench isolation (STI)

    المؤلفون: Han Sin Lee, Moon Han Park, Yu Gyun Shin, Tai-su Park, Ho Kyu Kang, Sang In Lee, Moon Yong Lee

    المصدر: 1996 Symposium on VLSI Technology. Digest of Technical Papers VLSI technology VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on. :158-159 1996

    Relation: 1996 Symposium on VLSI Technology. Digest of Technical Papers

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  10. 10
    Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si

    المؤلفون: Yu Gyun Shin, Jeong Yong Lee, H. K. Kang, Moon Han Park

    المصدر: Journal of Crystal Growth. 231:107-114

    مصطلحات موضوعية: Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, Mineralogy, Condensed Matter Physics, Epitaxy, Amorphous solid, Inorganic Chemistry, Ion implantation, chemistry, Trench, Materials Chemistry, Surface layer, Thin film, Composite material

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3500c8692ef669a654ee41636aeb7815
    https://doi.org/10.1016/s0022-0248(01)01506-8

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