يعرض 1 - 10 نتائج من 22 نتيجة بحث عن '"Morassi, Luca"', وقت الاستعلام: 0.82s تنقيح النتائج
  1. 1
    مؤتمر
    Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs

    المؤلفون: Morassi, Luca, Verzellesi, Giovanni, Larcher, Luca, Zhao, Han, Lee, Jack C.

    المصدر: IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-3 May, 2011

    Relation: 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

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  2. 2
    مؤتمر
    Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

    المؤلفون: Morassi, Luca, Verzellesi, Giovanni, Pavan, Paolo, Veksler, Dmitry, Ok, Injo, Zhao, Han, Lee, Jack C., Bersuker, Gennadi

    المصدر: IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-3 May, 2011

    Relation: 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

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  3. 3
    Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation

    المؤلفون: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L.

    مصطلحات موضوعية: C-V Simulation, CV Alternative Channel Extraction (ACE), Dit extraction, III-V semiconductors, quantum mechanical (QM) effects, thin oxides, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3674::d0e509259f6fbd2b70c7019083aa15aa
    https://hdl.handle.net/11380/1146812

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  4. 4
    دورية أكاديمية

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  5. 5
    Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer

    المؤلفون: Bersuker, G., Heh, D., Young, C. D., Morassi, Luca, Padovani, Andrea, Larcher, Luca, Yew, K. S., Ong, Y. C., Ang, D. S., Pey, K. L., Taylor, W.

    مصطلحات موضوعية: breakdown, high-k dielectrics, interfacial layer

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3674::e5cd9d58db96377ea232f6f3f5ba2a43
    https://hdl.handle.net/11380/643086

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  6. 6
    Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs

    المؤلفون: Morassi, Luca, Verzellesi, Giovanni, Padovani, Andrea, Larcher, Luca, Pavan, Paolo, Veksler, D., Injo, Ok, Bersuker, G.

    مصطلحات موضوعية: InGaAs, high-K dielectric, III-V MOSFET

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3674::008ebbb0fc37a5975ba07f3469b29f53
    https://hdl.handle.net/11380/640285

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  7. 7
    Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing

    المؤلفون: Morassi, Luca, Larcher, Luca, Pantisano, L., Padovani, Andrea, Degreave, R., Zahid, M. B., O'Sullivan, B. J.

    مصطلحات موضوعية: intermixing, high-k, SILC

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3674::5a80e457dcbd45caebc25a7b4b743ea7
    https://hdl.handle.net/11380/655654

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  8. 8
    دورية أكاديمية
    Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation.

    المؤلفون: Anwar, Sarkar R. M., Vandenberghe, William G., Jha, Sumit, Barton, Adam T., Hinkle, Christopher L., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Buie, Creighton, Vogel, Eric M.

    المصدر: IEEE Transactions on Electron Devices; Sep2017, Vol. 64 Issue 9, p3786-3793, 8p

    مصطلحات موضوعية: SEMICONDUCTOR research, CAPACITANCE-voltage characteristics, DIELECTRICS, OXIDES, SIMULATION methods & models

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  9. 9
    دورية أكاديمية
    Comprehensive Capacitance?Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1?x and InxGa1?xAs: Part II?Fits and Extraction From Experimental Data.

    المؤلفون: Anwar, Sarkar R. M., Vandenberghe, William G., Jha, Sumit, Barton, Adam T., Hinkle, Christopher L., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Buie, Creighton, Vogel, Eric M.

    المصدر: IEEE Transactions on Electron Devices; Sep2017, Vol. 64 Issue 9, p3794-3801, 8p

    مصطلحات موضوعية: ELECTRIC capacity, ELECTRIC potential, SEMICONDUCTORS, FIELD-effect transistors, ATOMIC layer deposition, GERMANIUM

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  10. 10
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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