يعرض 1 - 10 نتائج من 65 نتيجة بحث عن '"Morgan, Adam J."', وقت الاستعلام: 1.21s تنقيح النتائج
  1. 1
    مؤتمر
    Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics

    المؤلفون: Mancini, Stephen A., Jang, Seung Yup, Binder, Andrew, Floyd, Richard, Kaplar, Robert, Atcitty, Stan, Morgan, Adam J., Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :339-342 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout

    المؤلفون: Lynch, Justin, Mancini, Steve, deBoer, Skylar, Jang, Seung-Yup, Morgan, Adam J., Lee, Bongmook, Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :124-127 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Mitigating High Electric Field Stresses in Power Modules Utilizing Field Grading Materials

    المؤلفون: Faruqe, Omar, Saha, Pradip Chandra, Muhammad Juberi, Asif, Morgan, Adam J., Sung, Woongje, Park, Chanyeop

    المصدر: 2024 IEEE Electrical Insulation Conference (EIC) Electrical Insulation Conference (EIC), 2024 IEEE. :233-237 Jun, 2024

    Relation: 2024 IEEE Electrical Insulation Conference (EIC)

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  4. 4
    مؤتمر
    Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :350-353 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023

    Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

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  6. 6
    مؤتمر
    A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance

    المؤلفون: Lynch, Justin, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :127-131 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

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  7. 7
    مؤتمر
    A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :54-57 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

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  8. 8
    مؤتمر
    Development of Nonlinear Resistive Field Grading Materials for Electric Field Mitigation in Power Electronic Modules

    المؤلفون: Faruqe, Omar, Haque, Farhina, Saha, Pradip, Morgan, Adam J., Sung, Woongje, Park, Chanyeop

    المصدر: 2022 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2022 IEEE. :1-5 Oct, 2022

    Relation: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

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  9. 9
    مؤتمر
    A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

    المؤلفون: Zhang, Hua, Liu, Tianshi, Gupta, Utsav, Isukapati, Sundar Babu, Ashik, Emran, Morgan, Adam J., Lee, Bongmook, Sung, Woongje, Agarwal, Anant K., Fayed, Ayman

    المصدر: 2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS) Circuits and Systems (MWSCAS), 2022 IEEE 65th International Midwest Symposium on. :1-4 Aug, 2022

    Relation: 2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS)

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  10. 10
    مؤتمر
    Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

    المؤلفون: Yun, Nick, Lynch, Justin, Morgan, Adam J, Xing, Diang, Jin, Michael, Qian, Jiashu, Kang, Minseok, Amarasinghe, Voshadhi, Ransom, John, Veliadis, Victor, Agarwal, Anant, Sung, Woongje

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :249-252 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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