يعرض 1 - 10 نتائج من 20 نتيجة بحث عن '"Moritz Fieback"', وقت الاستعلام: 0.84s تنقيح النتائج
  1. 1
    Using Hopfield Networks to Correct Instruction Faults

    المؤلفون: Troya Cagil Koylu, Moritz Fieback, Said Hamdioui, Mottaqiallah Taouil

    المصدر: 2022 IEEE 31st Asian Test Symposium (ATS).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1151c6c73692732a9c05141cfe06095
    https://doi.org/10.1109/ats56056.2022.00030

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  2. 2
    Structured Test Development Approach for Computation-in-Memory Architectures

    المؤلفون: Moritz Fieback, Mottaqiallah Taouil, Said Hamdioui

    المصدر: 2022 IEEE International Test Conference in Asia (ITC-Asia).

    مصطلحات موضوعية: fault, defect, ReRAM, test, computation-in-memory (CIM), RRAM, device-aware

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba112768546a207d4fbd5012a6ac2ac2
    https://doi.org/10.1109/itcasia55616.2022.00021

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  3. 3
    PVT Analysis for RRAM and STT-MRAM-based Logic Computation-in-Memory

    المؤلفون: Moritz Fieback, Christopher Munch, Anteneh Gebregiorgis, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Mehdi Tahoori

    المصدر: Proceedings of the 2022 IEEE European Test Symposium (ETS)

    مصطلحات موضوعية: PVT, reliability, STT-MRAM, emerging memories, Computation-in-Memory (CiM), RRAM

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a81c64acdb9816c4511c5b282756abef
    https://doi.org/10.1109/ets54262.2022.9810436

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  4. 4
    Defects, Fault Modeling, and Test Development Framework for RRAMs

    المؤلفون: Moritz Fieback, Guilherme Cardoso Medeiros, Lizhou Wu, Hassen Aziza, Rajendra Bishnoi, Mottaqiallah Taouil, Said Hamdioui

    المصدر: ACM Journal on Emerging Technologies in Computing Systems, 18(3)

    مصطلحات موضوعية: fault modeling, Hardware and Architecture, device-aware test, test development, Hardware_PERFORMANCEANDRELIABILITY, Electrical and Electronic Engineering, RRAM, Software, defect modeling

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f681ad8fba2015c35defc9a0b2ad41d2
    http://resolver.tudelft.nl/uuid:12f3526c-c4f5-499f-b04f-be570200324b

    View Record from ACM Digital Library
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  5. 5
    Accelerating RRAM Testing with a Low-cost Computation-in-Memory based DFT

    المؤلفون: Abhairaj Singh, Moritz Fieback, Rajendra Bishnoi, Filip Bradaric, Anteneh Gebregiorgis, Rajiv V. Joshi, Said Hamdioui

    المصدر: Proceedings - 2022 IEEE International Test Conference, ITC 2022.

    مصطلحات موضوعية: RRAM defects, Testing RRAM, computation-in-memory (CIM), Design-for-testability (DFT), binary logic

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3ff4c045cc4e52e9ae67df46a3f5352
    http://resolver.tudelft.nl/uuid:b3c28bc7-2a91-4d7a-bd40-9971e6744322

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  6. 6
    Improving the Detection of Undefined State Faults in FinFET SRAMs

    المؤلفون: L. B. Poehls, Guilherme Cardoso Medeiros, Said Hamdioui, Moritz Fieback, Anteneh Gebregiorgis, Mottaqiallah Taouil, Thiago Santos Copetti

    المصدر: International Conference on Design & Technology of Integrated System in Nanoscale Era (DTIS)
    ISSUE=16th;TITLE=International Conference on Design & Technology of Integrated System in Nanoscale Era (DTIS)
    DTIS
    6 Seiten (2021). doi:10.1109/DTIS53253.2021.9505130
    2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 28-30 June 2021
    2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 28-30 June 202116. International Conference on Design & Technology of Integrated Systems in Nanoscale Era, DTIS 2021, Montpellier, France, 2021-06-28-2021-06-30

    مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Computer science, Design for testing, Hardware_PERFORMANCEANDRELIABILITY, SRAM, DFT, Reliability engineering, Memory Testing, Undefined State, Memory cell, FinFET, Overhead (computing), Static noise margin, State (computer science), Stress conditions, Static random-access memory, Test solution

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::844d9133f08999552026c1dba57da2b6
    http://resolver.tudelft.nl/uuid:9ff88616-7e44-44b5-a6f0-9ad3c013e47f

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  7. 7
    Intermittent Undefined State Fault in RRAMs

    المؤلفون: Anteneh Gebregiorgis, Hassen Aziza, Mottaqiallah Taouil, Moritz Fieback, Said Hamdioui, Guilherme Cardoso Medeiros

    المساهمون: Delft University of Technology (TU Delft), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: 2021 IEEE European Test Symposium (ETS)
    2021 IEEE European Test Symposium (ETS), May 2021, Bruges, France. pp.1-6, ⟨10.1109/ETS50041.2021.9465401⟩
    ETS

    مصطلحات موضوعية: Random access memory, Resistive touchscreen, Computer science, Test quality, 020208 electrical & electronic engineering, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Fault modeling, Fault (power engineering), defect modeling, 020202 computer hardware & architecture, Resistive random-access memory, RRAM test, device-aware test, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, State (computer science), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Random access

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66ccabb5c4b860677b847f9d7331a96
    http://resolver.tudelft.nl/uuid:abd24f1e-5a67-41ea-95c6-cf621a8c65a9

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  8. 8
    Review of Manufacturing Process Defects and Their Effects on Memristive Devices

    المؤلفون: L. Bolzani Poehls, Tobias Gemmeke, Moritz Fieback, E. Brum, Said Hamdioui, Stephan Menzel, S. Hoffmann-Eifert, Thiago Santos Copetti

    المصدر: Journal of Electronic Testing: theory and applications, 37(4)
    Journal of electronic testing 47, 1 (2021). doi:10.1007/s10836-021-05968-8
    Journal of electronic testing 37(4), 427-437 (2021). doi:10.1007/s10836-021-05968-8

    مصطلحات موضوعية: Computer science, Manufacturing process, business.industry, Big data, CMOS, Fault models, Fault (power engineering), Reliability engineering, Identification (information), Power consumption, ddc:670, Scalability, Memristive devices, Defects, Electrical and Electronic Engineering, business, Standby power

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a3bc370c564bb7a8108fca45353b85
    http://resolver.tudelft.nl/uuid:a8a3c22a-57c9-4d0d-838a-1d89e1fe272c

    Find this article in full text from Springer Verlag. Find this article in full text from ProQuest
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  9. 9
    Hard-to-Detect Fault Analysis in FinFET SRAMs

    المؤلفون: Mottaqiallah Taouil, Lizhou Wu, Said Hamdioui, Leticia Bolzani Poehls, Guilherme Cardoso Medeiros, Moritz Fieback

    المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 29(6)

    مصطلحات موضوعية: static random access memory (SRAM), Computer science, Transistor, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, fin field-effect transistor (FinFET), Fault (power engineering), Fault analysis, test solutions, testing, 020202 computer hardware & architecture, Reliability engineering, Single test, law.invention, Hardware and Architecture, law, Fault coverage, 0202 electrical engineering, electronic engineering, information engineering, hard-to-detect (HTD) faults, Stress conditions, Electrical and Electronic Engineering, Software, Random access, Parametric statistics

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6e1171b41e8ae081ed62b14fcd25c92
    http://resolver.tudelft.nl/uuid:9172918d-8358-49a9-b4b6-799a7a8db9ca

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  10. 10
    Detecting Random Read Faults to Reduce Test Escapes in FinFET SRAMs

    المؤلفون: L. Bolzani Poehls, Mottaqiallah Taouil, Anteneh Gebregiorgis, G. Cardoso Medeiros, Said Hamdioui, Moritz Fieback

    المصدر: ETS
    2021 IEEE European Test Symposium (ETS)

    مصطلحات موضوعية: Computer science, Test Escapes, Design for testing, Failure rate, Hardware_PERFORMANCEANDRELIABILITY, SRAM, DFT, Reliability engineering, Memory Testing, Test algorithm, FinFET, Time overhead, Stress conditions, Detection rate, Voltage

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54990511062ef5869eef64a3d3a06a44
    http://resolver.tudelft.nl/uuid:46e8d882-4f85-4eaa-a484-c0cbf05b5945

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