المؤلفون: Goller, Maximilian, Franke, Jorg, Lentzsch, Tobias, Lutz, Josef, Basler, Thomas, Mouhoubi, Samir, Curatola, Gilberto

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :498-501 Jun, 2024

Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

المؤلفون: Roig, Jaume, Massie, Hal, Agullo, Guillermo, Tong, Chin-Foong, Mouhoubi, Samir, Bauwens, Filip

المصدر: 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE. :2386-2391 Mar, 2013

Relation: 2013 IEEE Applied Power Electronics Conference and Exposition - APEC 2013

المؤلفون: Loechelt, Gary, Grivna, Gordy, Golonka, Laurence, Hoggatt, Charles, Massie, Hal, De Pestel, Freddy, Martens, Nick, Mouhoubi, Samir, Roig, Jaume, Colpaert, Tony, Coppens, Peter, Bauwens, Filip, De Backer, Eddy

المصدر: 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :85-88 Jun, 2012

Relation: 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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المؤلفون: Limam, Khouloud, Cheema, Shahzad, Mouhoubi, Samir, Freijedo, Francisco D.

المصدر: IEEE Journal of Emerging and Selected Topics in Industrial Electronics; January 2024, Vol. 5 Issue: 1 p203-211, 9p

المؤلفون: Sun, Jiahui, Mouhoubi, Samir, Silvestri, Marco, Zheng, Zheyang, Ng, Yat Hon, Shu, Ji, Chen, Jing, Curatola, Gilberto

مصطلحات الفهرس: Aluminum gallium nitride, Fully depleted p-GaN, Gate current, HEMTs, Junctions, Logic gates, Mg activation, Pins, Temperature dependence, Wide band gap semiconductors, Article

URL: https://repository.hkust.edu.hk/ir/Record/1783.1-132177
https://doi.org/10.1109/LED.2023.3324011
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Sun&rft.aufirst=Jiahui&rft.atitle=Gate+Characteristics+of+Enhancement-Mode+Fully+Depleted+%3Citalic%3Ep%3C%2Fitalic%3E-GaN+Gate+HEMT&rft.title=IEEE+Electron+Device+Letters
http://www.scopus.com/record/display.url?eid=2-s2.0-85174810282&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=001152564000008

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