نتائج البحث - "N. Jossart"

1

Magnetic domain walls: from physics to devices

المؤلفون: E. Raymenants, D. Wan, S. Couet, Y. Canvel, A. Thiam, D. Tsvetanova, L. Souriau, I. Asselberghs, R. Carpenter, N. Jossart, M. Manfrini, A. Vaysset, O. Bultynck, S. Van Beek, M. Heyns, D.E. Nikonov, I.A. Young, S. Ghosh, L. Vila, K. Garello, S. Pizzini, V.D. Nguyen, I.P. Radu

المساهمون: IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Micro et NanoMagnétisme (NEEL - MNM), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.3.1-32.3.4, ⟨10.1109/IEDM19574.2021.9720689⟩

مصطلحات موضوعية: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6514f3ee5a0a8a8fecbd4457301eaff6
https://hal.science/hal-03768245

2

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

المؤلفون: S. H. Sharifi, Simon Van Beek, Shreya Kundu, Sebastien Couet, N. Jossart, Gouri Sankar Kar, Siddharth Rao

المصدر: Electronics, Vol 10, Iss 2384, p 2384 (2021)
Electronics
Volume 10
Issue 19

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c710c5f7f7f61db098afc4872e20e0b
https://www.mdpi.com/2079-9292/10/19/2384

Find this article in full text from ProQuest

3

STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application

المؤلفون: D. Crotti, F. Yasin, W. Kim, N. Jossart, Sebastien Couet, S. Van Beek, Ludovic Goux, Shreya Kundu, Gouri Sankar Kar, Stefan Cosemans, S. H. Sharifi, R. Carpenter, Siddharth Rao, M. Perumkunnil, Barry O'Sullivan, Laurent Souriau

المصدر: 2021 IEEE International Memory Workshop (IMW).

مصطلحات موضوعية: Reduction (complexity), Magnetoresistive random-access memory, Reliability (semiconductor), Materials science, CMOS, Ion beam, business.industry, Optoelectronics, Node (circuits), Beak formation, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ff356c441065c3678a40f01fec3caaf2
https://doi.org/10.1109/imw51353.2021.9439592

4

Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution

المؤلفون: S. H. Sharifi, Stefan Cosemans, R. Carpenter, D. Crotti, Shreya Kundu, N. Jossart, Sebastien Couet, Barry O'Sullivan, Farukh Yasin, Siddharth Rao, Woojin Kim, Simon Van Beek, Gouri Sankar Kar

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Ion beam, business.industry, Annealing (metallurgy), 02 engineering and technology, Edge (geometry), 021001 nanoscience & nanotechnology, 01 natural sciences, Reliability (semiconductor), 0103 physical sciences, Optoelectronics, Degradation (geology), 0210 nano-technology, business, Layer (electronics), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f3d7931e7fd88cb444af42a045c0d011
https://doi.org/10.1109/irps46558.2021.9405209

5

Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays

المؤلفون: Harold Dekkers, M. Mao, Siddharth Rao, D. Crotti, Gouri Sankar Kar, Adrian Chasin, Sofie Mertens, Andrea Fantini, Manoj Nag, S. Houshmand Sharifi, N. Jossart

المصدر: 2020 IEEE International Memory Workshop (IMW).

مصطلحات موضوعية: chemistry.chemical_compound, Materials science, chemistry, business.industry, Schottky barrier, Oxide, Optoelectronics, Peak current, Schottky diode, business, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40c6294094f90ace6f9041494d46d2cc
https://doi.org/10.1109/imw48823.2020.9108124

6

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

المؤلفون: H. Hody, S. H. Sharifi, Jianhong Wu, Siddharth Rao, R. Carpenter, F. Yasin, Kevin Garello, N. Jossart, Johan Swerts, K. K. V. Sethu, Laurent Souriau, M. Pak, Woojin Kim, Sebastien Couet, Gouri Sankar Kar, D. Crotti, Arnaud Furnemont

المساهمون: IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven)

المصدر: 2019 Symposium on VLSI Circuits
2019 Symposium on VLSI Circuits, Jun 2019, Kyoto, France. pp.T194-T195, ⟨10.23919/VLSIC.2019.8778100⟩
VLSI Circuits

مصطلحات موضوعية: Very-large-scale integration, 010302 applied physics, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Computer science, Electrical engineering, FOS: Physical sciences, Applied Physics (physics.app-ph), Physics - Applied Physics, 02 engineering and technology, Technology development, 021001 nanoscience & nanotechnology, 01 natural sciences, Field (computer science), Power (physics), Reliability (semiconductor), Stack (abstract data type), 0103 physical sciences, Wafer, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43779dc1a8bc27d577fdc1bdd8f0b51e
https://hal.archives-ouvertes.fr/hal-03239895/file/VLSI_SOT-MRAM_FieldFree_vff.pdf

7

First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND

المؤلفون: Tom Raymaekers, G. Van den bosch, N. Jossart, M. Pak, M. Baryshnikova, Bernardette Kunert, J. Stiers, Patrick Ong, Lieve Teugels, Leqi Zhang, Erik Rosseel, Antonio Arreghini, S. Vadakupudhu Palayam, S. Ramesh, Arnaud Furnemont

المصدر: 2019 IEEE 11th International Memory Workshop (IMW).

مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, NAND gate, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, Memory performance, 01 natural sciences, chemistry.chemical_compound, chemistry, Logic gate, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Indium gallium arsenide

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::64fcbd30a9fb393ded0464176082f3b5
https://doi.org/10.1109/imw.2019.8739580

8

First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

المؤلفون: E. Vecchio, Tom Raymaekers, Erik Rosseel, C.-L. Tan, N. Jossart, Leqi Zhang, G. Van den bosch, M. Pak, Laurent Breuil, S. S. V-Palayam, Romain Delhougne, Arnaud Furnemont, Antonio Arreghini, Laura Nyns, Andriy Hikavyy

المصدر: 2018 IEEE Symposium on VLSI Technology.

مصطلحات موضوعية: 010302 applied physics, Electron mobility, Materials science, Fabrication, Silicon, business.industry, NAND gate, chemistry.chemical_element, 01 natural sciences, Design for manufacturability, Monocrystalline silicon, chemistry, Logic gate, 0103 physical sciences, Optoelectronics, business, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fcfecc4d9919283e0966cd1dfea19d80
https://doi.org/10.1109/vlsit.2018.8510635

9

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

المؤلفون: Manuel Baumgartner, N. Jossart, Johan Swerts, S. Van Beek, D. Crotti, Eva Grimaldi, Pietro Gambardella, Gouri Sankar Kar, Shreya Kundu, F. Yasin, Laurent Souriau, Kevin Garello, Sebastien Couet, Diana Tsvetanova, Enlong Liu, A. Fumemont, W. Kim, Kristof Croes, Siddharth Rao

المساهمون: IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)

المصدر: VLSI Circuits
2018 IEEE Symposium on VLSI Circuits
2018 IEEE Symposium on VLSI Circuits, Jun 2018, Honolulu, United States. pp.81-82, ⟨10.1109/VLSIC.2018.8502269⟩
Proceedings of the 2018 IEEE Symposium on VLSI Circuits

مصطلحات موضوعية: FOS: Computer and information sciences, Magnetoresistance, Computer Science - Emerging Technologies, FOS: Physical sciences, 02 engineering and technology, Applied Physics (physics.app-ph), 01 natural sciences, Switching time, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Torque, Wafer, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Physics, Magnetoresistive random-access memory, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Power (physics), Emerging Technologies (cs.ET), Optoelectronics, 0210 nano-technology, business, Current density, Ultrashort pulse

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a75051dd8003aabdeb9c8add87fb9d6c

10

Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks

المؤلفون: S. Van Elshocht, Enlong Liu, J. Swerts, S. Van Beek, Sofie Mertens, N. Jossart, Kevin Garello, Thibaut Devolder, W. Kim, Arnaud Furnemont, Siddharth Rao, D. Crotti, Laurent Souriau, Sushil Sakhare, Gouri Sankar Kar, Barry O'Sullivan, F. Yasin, Sebastien Couet, Shreya Kundu

المصدر: 2017 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Barrier layer, Tunnel magnetoresistance, Stack (abstract data type), 0103 physical sciences, Compatibility (mechanics), Perpendicular, Optoelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e8d56f2a745c508ae06df63db3cbfa8b
https://doi.org/10.1109/iedm.2017.8268518

تنقيح النتائج