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المؤلفون: K. Hatakeyama, Yuji Takeuchi, N. Kai, S. Satoh, Akira Shimizu, Hisataka Meguro, T. Hirose, Kazuhiro Shimizu, H. Kamata, Wakako Moriyama, K. Kugimiya, N. Ohtami, S. Miyazaki, Yoshiyuki Matsunaga, N. Arai, Fumitaka Arai, R. Shirota, Shigeki Takahashi, Toshitake Yaegashi, Eiji Kamiya
المصدر: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Programmable metallization cell, NAND gate, Integrated circuit design, Mass storage, Flash (photography), Gigabit, Charge trap flash, Electronic engineering, Optoelectronics, business, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::03c0a36c323c06057908e898dd9efbe2
https://doi.org/10.1109/iedm.2000.904432