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1مؤتمر
المؤلفون: Chi-Hoon Lee, Nak-Jin Son, Sun-Cheol Hong, Seung-Moo Lee, Dong-Gun Park, Won-Hee Jang, Tae-Hyun An, Wonshik Lee
المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) Semiconductor device research Semiconductor Device Research Symposium, 2001 International. :38-41 2001
Relation: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings
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2مؤتمرEffects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs
المؤلفون: Donggun Park, Nak-Jin Son, Ji-Young Kim, Wonshik Lee
المصدر: 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Integrated reliability workshop Integrated Reliability Workshop Final Report, 2000 IEEE International. :125-128 2000
Relation: 2000 IEEE International Integrated Reliability Workshop Final Report
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3دورية أكاديمية
المؤلفون: Nak-Jin Son, Yongchul Oh, Wookje Kim, Jang, S.-M., Wouns Yang, Gyoyoung Jin, Donggun Park, Kinam Kim
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(10):1644-1652 Oct, 2004
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4مؤتمر
المؤلفون: Wookje Kim, Satoru Yamada, Sang-Yeon Han, Chang-Hoon Jeon, Shin-Deuk Kim, Siok Sohn, Nak-Jin Son, Jung-Su Park, Wouns Yang, Young-Pil Kim, Won-Seok Lee, Donggun Park, Byung-il Ryu
المصدر: 2006 European Solid-State Device Research Conference Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European. :254-257 Sep, 2006
Relation: 2006 European Solid-State Device Research Conference
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5
المؤلفون: Nak-Jin Son, Yongmin Park, Hwa-Sung Rhee, Sung Gun Kang, Sung-il Cho, Kyung-Hwan Yeo, Eun-Cheol Lee, Yun-Ki Choi, Jong Shik Yoon, Heebum Hong, Jeong-Hoon Ahn, Dongwoo Kim, Il-Ryong Kim, Jungtae Kim, Jong Mil Youn, Jae-Hun Jeong
المصدر: 2018 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Cryptocurrency, Computer science, Volume (computing), Process (computing), 01 natural sciences, Automotive engineering, High volume manufacturing, Power (physics), Reduction (complexity), Logic gate, 0103 physical sciences, 010301 acoustics, Scaling
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40b1037773b5c94d6df5444162cc2a3a
https://doi.org/10.1109/vlsit.2018.8510673 -
6A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n
$^+$ -Doped Polysiliconالمؤلفون: Donggun Park, Wouns Yang, Gyo-Young Jin, Nak-Jin Son, Wookje Kim, Yong-chul Oh, Sungho Jang, Kinam Kim
المصدر: IEEE Transactions on Electron Devices. 51:1644-1652
مصطلحات موضوعية: Dynamic random-access memory, Materials science, business.industry, Doping, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, Electronic, Optical and Magnetic Materials, law.invention, Ion implantation, Gate oxide, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electrical and Electronic Engineering, business, Dram, High-κ dielectric
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::97374d2b41958be0e1c1d756324aae02
https://doi.org/10.1109/ted.2004.835162
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7
المؤلفون: Nak-Jin Son, Byung-Il Ryu, Donggun Park, Chang-Hoon Jeon, Satoru Yamada, Shin-Deuk Kim, Young-pil Kim, Jung-Su Park, Sang-Yeon Han, Wouns Yang, Wookje Kim, Wonseok Lee, Siok Soh
المصدر: 2006 European Solid-State Device Research Conference.
مصطلحات موضوعية: Materials science, law, business.industry, Electric field, Transistor, Electrical engineering, Optoelectronics, Drain-induced barrier lowering, business, Dram, law.invention, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cb966d52f7b86502c70b97df305be934
https://doi.org/10.1109/essder.2006.307686
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8
المؤلفون: Donggun Park, Nak-Jin Son, Seung-Moo Lee, Sun-Cheol Hong, Won-Hee Jang, Chihoon Lee, Wonshik Lee, Tae-Hyun An
المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
مصطلحات موضوعية: Fabrication, Materials science, business.industry, Electrical engineering, law.invention, Arc (geometry), Anti-reflective coating, law, Gigabit, Optoelectronics, Photolithography, business, Lithography, Deposition (law), Dram
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d7d78be980afbc9f53d5c946e8ce2f4d
https://doi.org/10.1109/isdrs.2001.984433 -
9Effects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs
المؤلفون: Donggun Park, Jiyoung Kim, Wonshik Lee, Nak-Jin Son
المصدر: 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).
مصطلحات موضوعية: Dynamic random-access memory, Materials science, Stress effects, business.industry, Carrier lifetime, law.invention, law, MOSFET, Electronic engineering, Optoelectronics, Polycide, Rapid thermal annealing, business, Dram, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d619d5956318903dd4fbdd56fbe02545
https://doi.org/10.1109/irws.2000.911918 -
10مؤتمر
المؤلفون: Chi-Hoon Lee, Nak-Jin Son, Sun-Cheol Hong, Seung-Moo Lee, Dong-Gun Park, Won-Hee Jang, Tae-Hyun An, Wonshik Lee
المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p38-41, 4p
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