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المؤلفون: Sachin Dev, Saurabh Lodha, Nilay Pradhan, Naushad Variam
المصدر: IEEE Transactions on Electron Devices. 67:419-423
مصطلحات موضوعية: Chemical substance, Materials science, Dopant, Annealing (metallurgy), business.industry, chemistry.chemical_element, Germanium, Dopant Activation, Nitrogen, Electronic, Optical and Magnetic Materials, chemistry, CMOS, Optoelectronics, Electrical and Electronic Engineering, Science, technology and society, business
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2
المؤلفون: Naushad Variam, Hans van Meer
المصدر: 2021 20th International Workshop on Junction Technology (IWJT).
مصطلحات موضوعية: Materials science, CMOS, law, Transistor, Contact resistance, Fin height, Audio time-scale/pitch modification, Engineering physics, Current density, Scaling, law.invention
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::85fc05317050c3d3aa6f777af490c481
https://doi.org/10.23919/iwjt52818.2021.9609347 -
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المؤلفون: Stefan Kubicek, Naushad Variam, Pierre Eyben, Y. Kikuchi, Dan Mocuta, Naoto Horiguchi, A. Waite, T. Hopf, Jose Ignacio del Agua Borniquel, Geert Mannaert, Jean-Luc Everaert
المصدر: Solid-State Electronics. 152:58-64
مصطلحات موضوعية: 010302 applied physics, Materials science, Spreading resistance profiling, business.industry, Doping, Drain-induced barrier lowering, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Ion, Secondary ion mass spectrometry, Ion implantation, 0103 physical sciences, Materials Chemistry, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, 0210 nano-technology, business, Sheet resistance
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المؤلفون: N. H. Yang, S. Salimian, C. I. Li, J. Kuo, T. Y. Wen, S. Tang, Kelly E Hollar, B.N. Guo, M. Hou, Shashank Sharma, J. Y. Wu, H. Nejad, S. Nagy, S. H. Tsai, Ben Ng, C. Wang, Hans-Joachim L. Gossmann, M. S. Hsieh, Raymond Hung, G. C. Hung, Fareen Adeni Khaja, D. Liao, S. C. Hsu, J. Wen, Michael Chudzik, Kyu-Ha Shim, C. W. Chang, S. Y. Liu, Nicolas Breil, S.-C. Chen, S. J. Yen, Naushad Variam
المصدر: IEEE Electron Device Letters. 40:307-309
مصطلحات موضوعية: 010302 applied physics, Materials science, Dopant, Annealing (metallurgy), business.industry, Contact resistance, Doping, Transistor, Plasma, Epitaxy, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business
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المؤلفون: Lee Jae Young, Emily M. Turner, Kevin S. Jones, I. Avci, Naushad Variam, Hans van Meer
المصدر: 2018 22nd International Conference on Ion Implantation Technology (IIT).
مصطلحات موضوعية: 010302 applied physics, Fin, Fabrication, Materials science, Scattering, Annealing (metallurgy), 0211 other engineering and technologies, Stacking, Oxide, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, Recoil, Ion implantation, chemistry, 021105 building & construction, 0103 physical sciences, Composite material
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ef6f63ff3461a48684fadcd5a5be515f
https://doi.org/10.1109/iit.2018.8807979 -
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المؤلفون: Stefan Kubicek, G. Mannaert, Katia Devriendt, J. Cournoyer, Romain Ritzenthaler, Y. Kikuchi, Jose Ignacio del Agua Borniquel, Dan Mocuta, A. Waite, Z. Tao, Naoto Horiguchi, R. Schreutelkamp, Steven Demuynck, Min-Soo Kim, T. Hopf, Tom Schram, Naushad Variam, S. A. Chew
المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Fin (extended surface), Ion, Ion implantation, CMOS, chemistry, Logic gate, 0103 physical sciences, Electronic engineering, Optoelectronics, 0210 nano-technology, business, Metal gate, Hard mask
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::203b14725cc6f8b4adcabf558d9e7fac
https://doi.org/10.1109/iedm.2016.7838440 -
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المؤلفون: K. V. Rao, Andrew M. Waite, Hans-Joachim L. Gossmann, Fareen Adeni Khaja, Naushad Variam, Nilay Pradhan, Kyu-Ha Shim, Christos Thomidis, Benjamin Colombeau, B.N. Guo, Todd Henry
المصدر: physica status solidi (a). 211:101-108
مصطلحات موضوعية: Strain engineering, CMOS, Computer science, Scalability, MOSFET, Materials Chemistry, Electronic engineering, Surfaces and Interfaces, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Leakage (electronics)
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المؤلفون: Fareen Adeni Khaja, Venkataramana R. Chavva, Wesley Suen, Osbert Chan, Chi-Nung Ni, Man-Ping Cai, Thirumal Thanigaivelan, B. Colombeau, Motoya Okazaki, Hans-Joachim L. Gossmann, Adam Brand, Hao Chen, Shashank Sharma, Nilay Pradhan, Bingxi Wood, Andrew M. Waite, Miao Jin, Abhilash J. Mayur, Shiyu Sun, Chorng-Ping Chang, Naushad Variam, Samuel Swaroop Munnangi
المصدر: ECS Transactions. 58:249-256
مصطلحات موضوعية: Fin, Materials science, Silicon, business.industry, Doping, Transistor, Electrical engineering, chemistry.chemical_element, law.invention, Ion implantation, chemistry, law, Parasitic element, Optoelectronics, business, Sheet resistance, Leakage (electronics)
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المؤلفون: Vivek R. Rao, Yihwan Kim, Alan Zojaji, Shankar Muthukrishnan, Rubi Lapena, Dimitry Kouzminov, Naushad Variam, Adam Brand, Ben Ng, Stephen Nagy, Stephen Moffatt, Shiyu Sun
المصدر: physica status solidi c. 9:2436-2439
مصطلحات موضوعية: Semiconductor industry, Piping, Semiconductor, Materials science, business.industry, Annealing (metallurgy), MOSFET, Junction leakage, Parasitic element, Optoelectronics, Condensed Matter Physics, business, Salicide
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المؤلفون: G. C. Hung, D. Liao, D. Tsai, C. T. Tsai, J. Kuo, Nicolas Breil, J. Wen, T.R. Yew, C.Y. Yang, J. Ren, J. Hebb, Osbert Cheng, J. Y. Wu, S. C. Hsu, S.H. Lin, J.H. Park, J. Hsieh, F. Chiang, Chi-Nung Ni, N. H. Yang, Naushad Variam, S. Chen, Benjamin Colombeau, J.F. Lin, Shashank Sharma, H.F. Huang, Y.R. Yang, Michael Chudzik, G. Leung, Kyu-Ha Shim, B.N. Guo, M. Hou, Hao Chen
المصدر: 2016 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Materials science, Dopant, business.industry, Contact resistance, Doping, 0211 other engineering and technologies, Recrystallization (metallurgy), 02 engineering and technology, Epitaxy, 01 natural sciences, chemistry.chemical_compound, chemistry, Electrical resistivity and conductivity, 021105 building & construction, 0103 physical sciences, Trench, Silicide, Electronic engineering, Optoelectronics, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a751b1ec6d9b3bd3c05eeebafba4e005
https://doi.org/10.1109/vlsit.2016.7573384