يعرض 1 - 10 نتائج من 45 نتيجة بحث عن '"Navlakha, Nupur"', وقت الاستعلام: 1.10s تنقيح النتائج
  1. 1
    مؤتمر
    Long-Term Potentiation and Depression with Vertically Stacked Nanosheet FET

    المؤلفون: Navlakha, Nupur, Ansari, Md. Hasan Raza

    المصدر: 2023 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2023 IEEE Latin American. :1-4 Jul, 2023

    Relation: 2023 IEEE Latin American Electron Devices Conference (LAEDC)

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  2. 2
    تقرير
    Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering

    المؤلفون: Navlakha, Nupur, Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.

    مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics

    URL الوصول: http://arxiv.org/abs/2203.15730

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  3. 3
    مؤتمر
    TFET based 1T-DRAM: Physics, Significance and Trade-offs

    المؤلفون: Navlakha, Nupur, Ansari, Md. Hasan Raza, Kranti, Abhinav

    المصدر: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019 IEEE. :1-3 Oct, 2019

    Relation: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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  4. 4
    مؤتمر
    Physical Insights on Junction Controllability for Improved Performance of Planar Trigate Tunnel FET as Capacitorless Dynamic Memory

    المؤلفون: Navlakha, Nupur, Kranti, Abhinav

    المصدر: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :129-132 Sep, 2018

    Relation: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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  5. 5
    مؤتمر
    Emerging FETs for Low Power and High Speed Embedded Dynamic Random Access Memory

    المؤلفون: Ansari, Md. Hasan Raza, Navlakha, Nupur, Lin, Jyi-Tsong, Kranti, Abhinav

    المصدر: 2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID) VLSID VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID), 2018 31st International Conference on. :422-427 Jan, 2018

    Relation: 2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID)

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  6. 6
    مؤتمر
    1T DRAM with Vertically Stacked n-Oxide-p Architecture

    المؤلفون: Ansari, Md. Hasan Raza, Navlakha, Nupur, Lin, Jyi-Tsong, Kranti, Abhinav

    المصدر: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018 IEEE. :1-3 Oct, 2018

    Relation: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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  7. 7
    مؤتمر
    Performance Assessment of TFET Architectures as 1T-DRAM

    المؤلفون: Navlakha, Nupur, Ansari, Md. Hasan Raza, Lin, Jyi-Tsong, Kranti, Abhinav

    المصدر: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018 IEEE. :1-3 Oct, 2018

    Relation: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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  8. 8
    دورية أكاديمية
    Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain, and Layer Engineering

    المؤلفون: Navlakha, NupurAff1, IDs1166402210093z_cor1, Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.

    المصدر: Journal of Electronic Materials. 52(2):1474-1483

    Find this article in full text from Springer Verlag. Find this article in full text from ProQuest Full Text Finder
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  9. 9
    مؤتمر
    Optimization of back gate workfunction, alignment and bias for charge retention in TFET based DRAM

    المؤلفون: Navlakha, Nupur, Kranti, Abhinav, Lin, Jyi-Tsong

    المصدر: 2016 3rd International Conference on Emerging Electronics (ICEE) Emerging Electronics (ICEE),2016 3rd International Conference on. :1-4 Dec, 2016

    Relation: 2016 3rd International Conference on Emerging Electronics (ICEE)

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  10. 10
    مؤتمر
    Design optimization of tunnel FET for dynamic memory applications

    المؤلفون: Navlakha, Nupur, Lin, Jyi-Tsong, Kranti, Abhinav

    المصدر: 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2017 International Conference on. :1-3 Oct, 2017

    Relation: 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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