المؤلفون: Yao, Yao, Luo, Haihui, Xiao, Qiang, Zhu, Chunlin, Xiao, Haibo, Qin, Rongzhen, Ngwendson, Luther-King, Ning, Xubin, Tan, Canjian, Deviny, Ian, Dai, Xiaoping

المصدر: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :112-115 May, 2018

Relation: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

المؤلفون: Deviny, Ian, Luo, Haihui, Xiao, Qiang, Yao, Yao, Zhu, Chunlin, Ngwendson, Luther-King, Xiao, Haibo, Dai, Xiaoping, Liu, Guoyou

المصدر: 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on. :147-150 May, 2017

Relation: 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.

المؤلفون: Menon, Kalyani G., Ngwendson, Luther King, Nakajima, Akira, Sankara Narayanan, Ekkanath Madathil, Bruce, Graham P.

المصدر: Materials Science Forum; May 2012, Vol. 717 Issue: 1 p1139-1142, 4p

المؤلفون: Long, Hongyao, Sweet, Mark R., Ngwendson, Luther-King, Narayanan, E. M. Sankara

المصدر: Japanese Journal of Applied Physics; Apr2010, Vol. 49 Issue 4S, p1-1, 1p