يعرض 1 - 10 نتائج من 23 نتيجة بحث عن '"Nian-Kai Zous"', وقت الاستعلام: 0.89s تنقيح النتائج
  1. 1
    مؤتمر
    Edge FN stress induced leakage current in tunnel oxides

    المؤلفون: Nian-Kai Zous, Yeh, C.C., Tsai, C.W., Chiang, L.P., Tahui Wang

    المصدر: 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) VLSI technology, systems, and applications VLSI Technology, Systems, and Applications, 1999. International Symposium on. :262-265 1999

    Relation: Proceedings of International Symposium on VLSI Technology Systems and Applications

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  2. 2
    دورية أكاديمية
    A novel operation method to avoid over-erasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

    المؤلفون: Wen-Jer Tsai, Nian-Kai Zous, Tahui Wang, Ku, Y.-H.J., Chih-Yuan Lu

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(4):808-814 Apr, 2006

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  3. 3
    دورية أكاديمية
    Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell

    المؤلفون: Wen-Jer Tsai, Chih-Chieh Yeh, Nian-Kai Zous, Chen-Chin Liu, Shih-Keng Cho, Tahui Wang, Pan, S.C., Chih-Yuan Lu

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(3):434-439 Mar, 2004

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  4. 4
    دورية أكاديمية
    Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices

    المؤلفون: Tahui Wang, Nian-Kai Zous, Chih-Chieh Yeh

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 49(11):1910-1916 Nov, 2002

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  5. 5
    دورية أكاديمية
    A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

    المؤلفون: Tahui Wang, Lu-Ping Chiang, Nian-Kai Zous, Charng-Feng Hsu, Li-Yuan Huang, Tien-Sheng Chao

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 46(9):1877-1882 Sep, 1999

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  6. 6
    دورية أكاديمية
    Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique

    المؤلفون: Tahui Wang, Lu-Ping Chiang, Nian-Kai Zous, Tse-En Chang, Chimoon Huang

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 45(8):1791-1796 Aug, 1998

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  7. 7
    دورية أكاديمية
    A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

    المؤلفون: Chih-Chieh Yeh, Tahui Wang, Wen-Jer Tsai, Tao-Cheng Lu, Yi-Ying Liao, Hung-Yueh Chen, Nian-Kai Zous, Wenchi Ting, Ku, J., Chih-Yuan Lu

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 25(9):643-645 Sep, 2004

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  8. 8
    دورية أكاديمية
    Hot hole stress induced leakage current (SILC) transient in tunnel oxides

    المؤلفون: Tahui Wang, Nian-Kai Zous, Jia-Long Lai, Chimoon Huang

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 19(11):411-413 Nov, 1998

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  9. 9
    Investigation of Geometric Effect Impact on SONOS Memory in a NAND Array Structure

    المؤلفون: Nian-Kai Zous, Yin-Jen Chen, Kuan-Fu Chen, I-Jen Huang, Shang-Wei Lin, Teng-Hao Yeh, Chih-Yuan Lu, S. H. Ku, W. P. Lu, Kuang-Chao Chen, Ming-Shiang Chen, Tzung-Ting Han, Lit-Ho Chong

    المصدر: IEEE Transactions on Semiconductor Manufacturing. 24:315-324

    مصطلحات موضوعية: Engineering, business.industry, NAND gate, Charge (physics), Integrated circuit, Condensed Matter Physics, Industrial and Manufacturing Engineering, Flash memory, Electronic, Optical and Magnetic Materials, law.invention, Non-volatile memory, Capacitor, law, Electronic engineering, Erasure, Array data structure, Electrical and Electronic Engineering, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::852115df9b2c0da665de2164eb5b1202
    https://doi.org/10.1109/tsm.2011.2111391

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  10. 10
    Source/Drain dopant concentration induced reliability issues in charge trapping NAND flash cells

    المؤلفون: W. P. Lu, C.H. Cheng, Chih-Yuan Lu, Kuang-Chao Chen, Ming-Shiang Chen, Tzung-Ting Han, Yin-Jen Chen, Tzu-Hsuan Hsu, Kuan-Fu Chen, Hang-Ting Lue, Jyun-Siang Huang, Teng-Hao Yeh, S. H. Ku, Nian-Kai Zous, I-Jen Huang, Lit Ho Chong, Shang-Wei Lin

    المصدر: 2010 IEEE International Reliability Physics Symposium.

    مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, Dopant, business.industry, Electrical engineering, NAND gate, Trapping, Flash memory, Threshold voltage, Reliability (semiconductor), Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Scaling, Hot-carrier injection

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e2376bb7da79112fb5ec0bc948597f6a
    https://doi.org/10.1109/irps.2010.5488759

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