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1مؤتمر
المؤلفون: Guegan, G., Souil, D., Deleonibus, S., Tedesco, S., Laviron, C., Previtali, P., Nier, M.E.
المصدر: 32nd European Solid-State Device Research Conference Solid-State Device Research Conference, 2002. Proceeding of the 32nd European. :119-122 2002
Relation: 32nd European Solid-State Device Research Conference
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2مؤتمر
المؤلفون: Fraboulet, D., Jehl, X., Mariolle, D., Le Royer, C., Le Carval, G., Scheiblin, P., Rivallin, P., Mollard, L., Deleroyelle, D., Nier, M.E., Toffoli, A., Molas, G., De Salvo, B., Deleonibus, S., Sanquer, M.
المصدر: 32nd European Solid-State Device Research Conference Solid-State Device Research Conference, 2002. Proceeding of the 32nd European. :395-398 2002
Relation: 32nd European Solid-State Device Research Conference
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3مؤتمر
المؤلفون: Guegan, G., Deleonibus, S., Bertrand, G., Souil, D., Rivallin, P., Tedesco, S., Mur, P., Holliger, P., Nier, M.E.
المصدر: 31st European Solid-State Device Research Conference Solid-State Device Research Conference, 2001. Proceeding of the 31st European. :171-174 2001
Relation: 31st European Solid-State Device Research Conference
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4مؤتمر
المؤلفون: Achard, H., Ducroquet, F., Coudert, F., Previtali, B., Lugand, J.F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.
المصدر: 30th European Solid-State Device Research Conference Solid-State Device Research Conference, 2000. Proceeding of the 30th European. :408-411 2000
Relation: 30th European Solid-State Device Research Conference
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5دورية أكاديميةFull CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications
المؤلفون: Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 48(8):1816-1821 Aug, 2001
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6دورية أكاديمية
المؤلفون: Deleonibus, S., Caillat, C., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Biswas, S., Souil, D.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 21(4):173-175 Apr, 2000
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7دورية أكاديمية
المؤلفون: Charvolin, T. ∗, Hadji, E., Picard, E., Zelsman, M., Assous, M., Dalzotto, B., Nier, M.E., Tedesco, S., Letartre, X., Rojo-Roméo, P., Seassal, C.
المصدر: In Microelectronic Engineering 2002 61:545-548
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8دورية أكاديمية
المؤلفون: Louis, D. ∗, Nier, M.E., Fery, C., Heitzmann, M., Papon, A.M., Renard, S.
المصدر: In Microelectronic Engineering 2002 61:859-865
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9دورية أكاديمية
المؤلفون: Caillat, C. *, Deleonibus, S., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Previtali, B., Toffoli, A., Allain, F., Biswas, S., Jourdan, F., Fugier, P., Dichiaro, J.L.
المصدر: In Solid State Electronics 2002 46(3):349-352
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10دورية أكاديميةA 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket
المؤلفون: Guegan, G. *, Deleonibus, S., Caillat, C., Tedesco, S., Dal’zotto, B., Heitzmann, M., Nier, M.E., Mur, P.
المصدر: In Solid State Electronics 2002 46(3):343-348