المؤلفون: Yau, J.-B., Yoon, J., Cai, J., Ning, T. H., Chan, K. K., Engelmann, S. U., Park, D.-G., Mo, R. T., Shahidi, G.

المصدر: 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE. :130-133 Sep, 2016

Relation: 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

المؤلفون: Yau, Jeng-Bang, Cai, J., Ning, T. H., Chan, K. K.

المصدر: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on. :1-2 Apr, 2017

Relation: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

المؤلفون: Ning, T. H., Cai, J.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 1(1):21-27 Jan, 2013

المؤلفون: Yau, J.-B., Cai, J., Yoon, J., D'emic, C., Chan, K. K., Ning, T. H., Engelmann, S. U., Park, D.-G., Mo, R. T.

المصدر: 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE. :1-2 Oct, 2015

Relation: 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

المؤلفون: Cai, J., Ning, T. H., D'Emic, C., Yau, J.-B., Chan, K. K., Yoon, J., Jenkins, K. A., Muralidhar, R., Park, D.-G.

المصدر: 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE. :1-2 Oct, 2013

Relation: 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Formerly known as SOI Conference)

المؤلفون: Cheng, K., Khakifirooz, A., Loubet, N., Luning, S., Nagumo, T., Vinet, M., Liu, Q., Reznicek, A., Adam, T., Naczas, S., Hashemi, P., Kuss, J., Li, J., He, H., Edge, L., Gimbert, J., Khare, P., Zhu, Y., Zhu, Z., Madan, A., Klymko, N., Holmes, S., Levin, T. M., Hubbard, A., Johnson, R., Terrizzi, M., Teehan, S., Upham, A., Pfeiffer, G., Wu, T., Inada, A., Allibert, F., Nguyen, B.-Y., Grenouillet, L., Le Tiec, Y., Wacquez, R., Kleemeier, W., Sampson, R., Dennard, R. H., Ning, T. H., Khare, M., Shahidi, G., Doris, B.

المصدر: 2012 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2012 IEEE International. :18.1.1-18.1.4 Dec, 2012

Relation: 2012 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Smith, T. P., III^Aff4, Dinger, T. R.^Aff4, Edelstein, D. C.^Aff4, Paraszczak, J. R.^Aff4, Ning, T. H.^Aff4

المساهمون: Luryi, Serge, editor^Aff1, Xu, Jimmy, editor^Aff2, Zaslavsky, Alex, editor^Aff3

المصدر: Future Trends in Microelectronics : Reflections on the Road to Nanotechnology. 323:45-56

المؤلفون: Yau, J.-B., Cai, J., Hashemi, P., Balakrishnan, K., D'Emic, C., Ning, T. H.

المصدر: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 7p, 3 Diagrams, 6 Graphs

مصطلحات موضوعية: BIPOLAR transistors, ION implantation, SILICON-on-insulator technology, DIODES, COMPLEMENTARY metal oxide semiconductors

المؤلفون: Hsu, C. C. H., Wang, L. K., Sun, J. Y. C., Wordeman, M. R., Ning, T. H.

المصدر: Journal of Electronic Materials. July 1990 19(7):721-725

المؤلفون: Ning, T. H

المصدر: Journal of Applied Physics; Dec1978, Vol. 49 Issue 12, p5997-6003, 7p