يعرض 1 - 10 نتائج من 24 نتيجة بحث عن '"Nishiwaki, Tatsuya"', وقت الاستعلام: 1.10s تنقيح النتائج
  1. 1
    مؤتمر
    Improvement of the RON- BV Tradeoff in Field-Plate MOSFETs by Localized Fixed Charges in the Trench Oxide

    المؤلفون: Fukuda, Taichi, Kobayashi, Yusuke, Baba, Shotaro, Gangi, Hiro, Nemoto, Hiroki, Inokuchi, Tomoaki, Kawai, Hirofumi, Nishiwaki, Tatsuya, Takao, Kazuto

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :359-362 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs

    المؤلفون: Nishiwaki, Tatsuya, Kumabe, Yu, Miyajima, Naoya, Kawamura, Keiko, Kobayashi, Kenya

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :355-358 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    On-Resistance Measurements of Low Voltage MOSFET at wafer level

    المؤلفون: Oasa, Kohei, Nishiwaki, Tatsuya, Ohguro, Tatsuya, Saito, Yasunobu, Kawaguchi, Yusuke

    المصدر: 2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023

    Relation: 2023 35th International Conference on Microelectronic Test Structure (ICMTS)

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  4. 4
    مؤتمر
    Measuring of parasitic resistance of stacked chip of Si power device

    المؤلفون: Ohguro, Tatsuya, Kojima, Hideharu, Hara, Takuma, Nishiwaki, Tatsuya, Kobayashi, Kenya

    المصدر: 2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023

    Relation: 2023 35th International Conference on Microelectronic Test Structure (ICMTS)

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  5. 5
    مؤتمر
    Improvement of the trade-off between Qrr and IDSS in trench field plate power MOSFETs by proton irradiation of the cathode side

    المؤلفون: Kobayashi, Yusuke, Nishiwaki, Tatsuya, Goryu, Akihiro, Kachi, Tsuyoshi, Gejo, Ryohei, Gangi, Hiro, Inokuchi, Tomoaki, Takao, Kazuto

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :285-288 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Stacked chip of Si power device with double side Cu plating for low on-resistance

    المؤلفون: Ohguro, Tatsuya, Kojima, Hideharu, Hara, Takuma, Nishiwaki, Tatsuya, Umekawa, Shinichi

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :187-190 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses

    المؤلفون: Nishiwaki, Tatsuya, Kachi, Tsuyoshi, Kawaguchi, Yusuke, Umekawa, Shinichi

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :155-158 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    مؤتمر
    Drift Layer Design utilizing Intermediate Boron Ion-implantation for 100-V-class Two-step-oxide Field-Plate Trench MOSFET to Improve Switching Loss

    المؤلفون: Kobayashi, Kenya, Kato, Hiroaki, Aida, Kikuo, Goryu, Akihiro, Nishiwaki, Tatsuya

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :191-194 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  9. 9
    مؤتمر
    100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance

    المؤلفون: Kobayashi, Kenya, Kato, Hiroaki, Nishiguchi, Toshifumi, Shimomura, Saya, Ohno, Tetsuya, Nishiwaki, Tatsuya, Aida, Kikuo, Ichinoseki, Kentaro, Oasa, Kohei, Kawaguchi, Yusuke

    المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :99-102 May, 2019

    Relation: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  10. 10
    مؤتمر
    Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices

    المؤلفون: Kobayashi, Hitoshi, Ohguro, Tatsuya, Kai, Tetsuya, Motai, Takako, Ogawa, Masaaki, Matsuo, Mie, Oohashi, Kenichi, Kozumi, Shinsuke, Takada, Yoshiharu, Kojima, Hideharu, Masuko, Shingo, Yonezawa, Naoki, Komatsu, Akira, Nishiwaki, Tatsuya, Hara, Takuma, Takahashi, Mari, Ezaki, Akira, Ohtsuka, Kenichi, Inumiya, Seiji, Suguro, Kyoichi

    المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :515-518 May, 2019

    Relation: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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