يعرض 1 - 10 نتائج من 159 نتيجة بحث عن '"Oda, Minoru"', وقت الاستعلام: 1.18s تنقيح النتائج
  1. 1
    مؤتمر
    Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI

    المؤلفون: Saitoh, Masumi, Fujii, Shosuke, Oda, Minoru, Yamaguchi, Marina, Kabuyanagi, Shoichi, Yoshimura, Yoko, Ota, Kensuke, Sakuma, Kiwamu, Kamimuta, Yuuichi

    المصدر: 2018 48th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2018 48th European. :138-141 Sep, 2018

    Relation: ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC)

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  2. 2
    مؤتمر
    Understanding of carrier transport in high-performance solid phase crystallized poly-Si nano-wire transistors

    المؤلفون: Oda, Minoru, Sakuma, Kiwamu, Kamimuta, Yuuichi, Saitoh, Masumi

    المصدر: 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AMFPD), 2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices. :270-272 Jul, 2016

    Relation: 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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  3. 3
    مؤتمر
    Carrier transport analysis of high-performance poly-Si Nanowire transistor fabricated by advanced SPC with record-high electron mobility

    المؤلفون: Oda, Minoru, Sakuma, Kiwamu, Kamimuta, Yuuichi, Saitoh, Masumi

    المصدر: 2015 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2015 IEEE International. :6.1.1-6.1.4 Dec, 2015

    Relation: 2015 IEEE International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Strained germanium nanowire MOSFETs

    المؤلفون: Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Oda, Minoru, Irisawa, Toshifumi, Tezuka, Tsutomu

    المصدر: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International. :3-4 Jun, 2014

    Relation: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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  5. 5
    مؤتمر
    Enhancement of hole mobility and cut-off characteristics of strained Ge nanowire pMOSFETs by using plasma oxidized GeOx inter-layer for gate stack

    المؤلفون: Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Usuda, Koji, Oda, Minoru, Irisawa, Toshifumi, Furuse, Kiyoe, Tezuka, Tsutomu

    المصدر: 2013 Symposium on VLSI Technology VLSI Technology (VLSIT), 2013 Symposium on. :T30-T31 Jun, 2013

    Relation: 2013 Symposium on VLSI Technology

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  6. 6
    مؤتمر
    Superior cut-off characteristics of Lg=40nm Wfin=7nm poly Ge junctionless Tri-gate FET for stacked 3D circuits integration

    المؤلفون: Kamata, Yoshiki, Kamimuta, Yuuichi, Ikeda, Keiji, Furuse, Kiyoe, Ono, Mizuki, Oda, Minoru, Moriyama, Yoshihiko, Usuda, Koji, Koike, Masahiro, Irisawa, Toshifumi, Kurosawa, Etsuo, Tezuka, Tsutomu

    المصدر: 2013 Symposium on VLSI Technology VLSI Technology (VLSIT), 2013 Symposium on. :T94-T95 Jun, 2013

    Relation: 2013 Symposium on VLSI Technology

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  7. 7
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  8. 8
    مؤتمر
    Fabrication of Bonded GeOI Substrates with Thin Al2O3/SiO2 Buried Oxide Layers

    المؤلفون: Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu

    المصدر: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International. :1-2 Jun, 2012

    Relation: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

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  9. 9
    مؤتمر
    0.8nm EOT and High Hole Mobility of Ge P-MISFETs Using HfAlO/GeOx/Ge Gate Stacks Formed by Plasma Oxidation and Atomic Layer Deposition

    المؤلفون: Kamimuta, Yuuichi, Ikeda, Keiji, Oda, Minoru, Moriyama, Yoshihiko, Tezuka, Tsutomu

    المصدر: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International. :1-2 Jun, 2012

    Relation: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

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  10. 10
    مؤتمر
    Uniaxially Strained Ge-Rich SiGe Nanowire Channel Technology for High-Performance CMOS

    المؤلفون: Ikeda, Keiji, Oda, Minoru, Irisawa, Toshifumi, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Tezuka, Tsutomu

    المصدر: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International. :1-2 Jun, 2012

    Relation: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

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