يعرض 1 - 10 نتائج من 996 نتيجة بحث عن '"Oh, H.-J."', وقت الاستعلام: 1.18s تنقيح النتائج
  1. 1
    مؤتمر
    Evaluation of nano deformation mechanisms of MWCNT by MEMS-based tensile test and molecular dynamics simulation

    المؤلفون: Ohmori, H., Yamauchi, K., Oh, H-J., Yashiro, K., Isono, Y.

    المصدر: 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on. :2017-2020 Jun, 2013

    Relation: 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)

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  2. 2
    مؤتمر
    The vector floating-point unit in a synergistic processor element of a CELL processor

    المؤلفون: Mueller, S.M., Jacobi, C., Oh, H.-J., Tran, K.D., Cottier, S.R., Michael, B.W., Nishikawa, H., Totsuka, Y., Namatame, T., Yano, N., Machida, T., Dhong, S.H.

    المصدر: 17th IEEE Symposium on Computer Arithmetic (ARITH'05) Computer arithmetic Computer Arithmetic, 2005. ARITH-17 2005. 17th IEEE Symposium on. :59-67 2005

    Relation: Proceedings. 17th IEEE Symposium on Computer Arithmetic

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  3. 3
    دورية أكاديمية
    Effects of Plasma-$\hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ nMOSFETs

    المؤلفون: Suleiman, S. A. B., Oh, H.-J., Lee, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(5):1377-1384 May, 2012

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  4. 4
    دورية أكاديمية
    Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

    المؤلفون: Lin, J. Q., Lee, S. J., Oh, H. J., Lo, G. Q., Kwong, D. L., Chi, D. Z.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(9):977-980 Sep, 2008

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  5. 5
    دورية أكاديمية
    Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance

    المؤلفون: Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H. S., Lo, G.-Q., Cho, B. J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(12):3292-3298 Dec, 2007

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  6. 6
    مؤتمر
    Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

    المؤلفون: Oh, H. J., Lin, J. Q., Suleiman, S. A. B., Lo, G. Q., Kwong, D. L., Chi, D. Z., Lee, S. J.

    المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

    Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

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  7. 7
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  8. 8
    مؤتمر
    Ground Subsidence Hazard Analysis in an Abandoned Underground Coal Mine Area using Probabisltic and Logistic Regression Models

    المؤلفون: Lee, S., Kim, K., Oh, H.-J., Park, N.-W.

    المصدر: 2006 IEEE International Symposium on Geoscience and Remote Sensing Geoscience and Remote Sensing Symposium, 2006. IGARSS 2006. IEEE International Conference on. :1549-1552 Jul, 2006

    Relation: 2006 IEEE International Symposium on Geoscience and Remote Sensing

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  9. 9
    مؤتمر
    Mineral Potential Assessment of Sedimentary Deposit using Frequency Ratio and Logistic Regression of Gangreung Area, Korea

    المؤلفون: Lee, S., Oh, H.-J., Park, N.-W.

    المصدر: 2006 IEEE International Symposium on Geoscience and Remote Sensing Geoscience and Remote Sensing Symposium, 2006. IGARSS 2006. IEEE International Conference on. :1576-1579 Jul, 2006

    Relation: 2006 IEEE International Symposium on Geoscience and Remote Sensing

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  10. 10
    تقرير
    Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

    المؤلفون: Kim, J. H., Kim, S. J., Lee, C. I., Jung, M. A., Oh, H. J., Rhyee, Jong-Soo, Jo, Younghun, Mitani, Hiroyuki, Miyazaki, Hidetoshi, Kimura, Shin-ichi, Kwon, Y. S.

    مصطلحات موضوعية: Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science

    URL الوصول: http://arxiv.org/abs/0911.5640

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