يعرض 1 - 10 نتائج من 36 نتيجة بحث عن '"Olivier Marcelot"', وقت الاستعلام: 0.90s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations

    المؤلفون: Stefano Merzi, Fabio Acerbi, Corinne Aicardi, Daniela Fiore, Vincent Goiffon, Alberto Giacomo Gola, Olivier Marcelot, Alex Materne, Olivier Saint-Pe

    المصدر: Sensors, Vol 24, Iss 15, p 4990 (2024)

    مصطلحات موضوعية: silicon photomultiplier, SiPM, single-photon, SPAD, proton, X-ray, Chemical technology, TP1-1185

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1424-8220/24/15/4990; https://doaj.org/toc/1424-8220

    URL الوصول: https://doaj.org/article/91048e47ddda4cb18b41e3204307a9d9

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
  2. 2
    دورية أكاديمية
    Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

    المؤلفون: Olivier Marcelot, Marjorie Morvan, Antoine Salih Alj, Stephane Demiguel, Cedric Virmontois, Anne Rouvie, Magali Estribeau, Vincent Goiffon

    المصدر: Sensors, Vol 23, Iss 23, p 9518 (2023)

    مصطلحات موضوعية: image sensors, CMOS image sensors, Charge Coupled Device (CCD), CMOS, electron multiplication, EMCCD, Chemical technology, TP1-1185

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1424-8220/23/23/9518; https://doaj.org/toc/1424-8220

    URL الوصول: https://doaj.org/article/e9a8010d87c640a1a65002164cae6bd4

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
  3. 3
    دورية أكاديمية
    Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

    المؤلفون: Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé, Pierre Magnan

    المصدر: Sensors, Vol 21, Iss 17, p 5860 (2021)

    مصطلحات موضوعية: single photon avalanche diode (SPAD), complementary metal-oxide semiconductor (CMOS), modeling and simulations, photon detection probability (PDP), quantum efficiency (QE), technology computer-aided design (TCAD), Chemical technology, TP1-1185

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1424-8220/21/17/5860; https://doaj.org/toc/1424-8220

    URL الوصول: https://doaj.org/article/9648b36e4f0843a7bc6af5aa52ab49ed

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
  4. 4
    دورية أكاديمية
    Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

    المؤلفون: Célestin Doyen, Stéphane Ricq, Pierre Magnan, Olivier Marcelot, Marios Barlas, Sébastien Place

    المصدر: Sensors, Vol 20, Iss 1, p 287 (2020)

    مصطلحات موضوعية: back-side illumination imager, dark current, interface states, passivation, electrical device characterization, test structures, w-shield, cdti, charge pumping, cv, Chemical technology, TP1-1185

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1424-8220/20/1/287; https://doaj.org/toc/1424-8220

    URL الوصول: https://doaj.org/article/a25555557b15474299abb7fb138e3158

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
  5. 5
    دورية أكاديمية
    Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

    المؤلفون: Vincent Goiffon, Magali Estribeau, Julien Michelot, Paola Cervantes, Alice Pelamatti, Olivier Marcelot, Pierre Magnan

    المصدر: IEEE Journal of the Electron Devices Society, Vol 2, Iss 4, Pp 65-76 (2014)

    مصطلحات موضوعية: Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/6819767/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/b6fc7fb3e7e34b9f86e8bc07ee2069a3

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame

    المؤلفون: Olivier Marcelot, Pierre Magnan, Olivier Saint-Pé, Federico Pace, M. Breart de Boisanger, Philippe Martin-Gonthier

    المصدر: IEEE Transactions on Electron Devices. 68:4491-4496

    مصطلحات موضوعية: CMOS, Pixel, Noise (signal processing), Computer science, Shutter, Frame (networking), ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Electronic engineering, Electrical and Electronic Engineering, Image sensor, Signal, Sensitivity (electronics), Electronic, Optical and Magnetic Materials

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3ed2400549e1e82481581da5a12986de
    https://doi.org/10.1109/ted.2021.3099451

    أضف إلى المفضلة
  7. 7
    CMOS Pixel Potentials Extraction Method From Test Structures Based on EKV Model

    المؤلفون: S. Ricq, C. Doyen, Pascal Fonteneau, Olivier Marcelot, Pierre Magnan

    المصدر: IEEE Transactions on Electron Devices. 68:2835-2840

    مصطلحات موضوعية: 010302 applied physics, Series (mathematics), Pixel, Computer science, Transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Photodiode, CMOS, law, Logic gate, 0103 physical sciences, Calibration, Electric potential, Electrical and Electronic Engineering, Algorithm

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::036af5c54c7e085259c12c4e92804476
    https://doi.org/10.1109/ted.2021.3075178

    أضف إلى المفضلة
  8. 8
    Capacitive Trench-Based Charge Transfer Device

    المؤلفون: Francois Roy, Pierre Touron, Cedric Virmontois, Stephane Demiguel, Olivier Marcelot, Pierre Magnan

    المصدر: IEEE Electron Device Letters. 41:1388-1391

    مصطلحات موضوعية: 010302 applied physics, Physics, Silicon, business.industry, Capacitive sensing, chemistry.chemical_element, Charge (physics), Electrostatics, 01 natural sciences, Electric charge, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Trench, Optoelectronics, Charge-coupled device, Electric potential, Electrical and Electronic Engineering, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::54ecc2f8e12ddd31b2bf5d68df603e3e
    https://doi.org/10.1109/led.2020.3014431

    أضف إلى المفضلة
  9. 9
    High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

    المؤلفون: Vincent Goiffon, Olivier Marcelot, Marc Gaillardin, Serena Rizzolo, Alexandre Le Roch, Franck Corbière, Pierre Magnan, Philippe Paillet

    المساهمون: Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)

    المصدر: IEEE Transactions on Nuclear Science.

    مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Astrophysics::High Energy Astrophysical Phenomena, Radiation, 01 natural sciences, law.invention, Optics, Autre, law, CMOS image sensors (CISs), 0103 physical sciences, Neutron, Electrical and Electronic Engineering, Image sensor, Radiation hardening, Neutron irradiation, Radiation hardness, 010308 nuclear & particles physics, business.industry, Quantum efficiency (QE), Shot noise, Displacement dose damages, Random telegraph signal (RTS), Photodiode, Dark current, Nuclear Energy and Engineering, Absorbed dose, business, Charge-to-voltage factor

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9f037599cf3c84cfc8d64b588edb341
    https://oatao.univ-toulouse.fr/26853/

    أضف إلى المفضلة
  10. 10
    Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

    المؤلفون: Philippe Paillet, Olivier Marcelot, Alexandre Le Roch, Cedric Virmontois, Laura Mont Casellas, Marco Van Uffelen, Vincent Goiffon, Hugo Dewitte, Serena Rizzolo, Pierre Magnan, Jean-Marc Belloir

    المساهمون: Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE), Centre National d'Études Spatiales - CNES (FRANCE), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE), Fusion for Energy - F4E (SPAIN), Direction des applications militaires Ile de France - CEA/DAM DIF (Arpajon, France)

    المصدر: IEEE Transactions on Nuclear Science.

    مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Proton, Annealing (metallurgy), Electric field enhancement (EFE), Total ionizing dose (TID), Neutron, 01 natural sciences, law.invention, Annealing, Arsenic, law, 0103 physical sciences, Traitement du signal et de l'image, Irradiation, Electrical and Electronic Engineering, Image sensor, 010308 nuclear & particles physics, business.industry, Intrinsic semiconductor, Doping, Phosphorus, E-center, Random telegraph signal (RTS), Photodiode, Shallowphotodiode, Dark current, Nuclear Energy and Engineering, Cluster, Displacement damage dose (DDD), Optoelectronics, CMOS image sensor (CIS), business, Deep photodiode

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf52d82ff1f664182e286ea4e987c33a
    https://oatao.univ-toulouse.fr/26850/

    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء