المؤلفون: Ramesh, S., Banerjee, K., Opsomer, K., Rachita, I., Bastos, J.P., Soulie, J., Sebaai, F., Favia, P., Korytov, M., Richard, O., Breuil, L., Arreghini, A., Van Den Bosch, G., Rosmeulen, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(12):2085-2088 Dec, 2022

المؤلفون: Ramesh, S., Palayam, S. Vadakupudhu, Ajaykumar, A., Opsomer, K., Bastos, J., Ragnarsson, L.-A., Breuil, L., Arreghini, A., Wouters, L., Spampinato, V., Favia, P., Mehta, A. Nalin, Carolan, P., Nyns, L., Katcko, K., Stiers, J., Van den bosch, G., Rosmeulen, M.

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :10.2.1-10.2.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Avasarala, Naga Sruti, Govoreanu, B., Opsomer, K., Devulder, W., Clima, S., Detavernier, C., van der Veen, Marleen, Van Houdt, Jan, Henys, Marc, Goux, L., Kar, G. S.

المصدر: 2017 47th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2017 47th European. :168-171 Sep, 2017

Relation: ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)

المؤلفون: Garbin, D., Devulder, W., Degraeve, R., Donadio, G. L., Clima, S., Opsomer, K., Fantini, A., Cellier, D., Kim, W. G., Pakala, M., Cockburn, A., Detavernier, C., Delhougne, R., Goux, L., Kar, G. S.

المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :35.1.1-35.1.4 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Avasarala, Naga Sruti, Donadio, G. L., Witters, T., Opsomer, K., Govoreanu, B., Fantini, A., Clima, S., Oh, H., Kundu, S., Devulder, W., van der Veen, M. H., Van Houdt, J., Heyns, M., Goux, L., Kar, G. S.

المصدر: 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :209-210 Jun, 2018

Relation: 2018 IEEE Symposium on VLSI Technology

المؤلفون: Govoreanu, B., Donadio, G. L., Opsomer, K., Devulder, W., Afanas'ev, V. V., Witters, T., Clima, S., Avasarala, N. S., Redolfi, A., Kundu, S., Richard, O., Tsvetanova, D., Pourtois, G., Detavemier, C., Goux, L., Kar, G. S.

المصدر: 2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T92-T93 Jun, 2017

Relation: 2017 Symposium on VLSI Technology

المؤلفون: Kim, M.-S., Popovici, M., Swerts, J., Pawlak, M. A., Tomida, K., Kaczer, B., Opsomer, K., Schaekers, M., Tielens, H., Vrancken, C., Van Elshocht, S., Debusschere, I., Altimime, L., Kittl, J. A.

المصدر: 2011 3rd IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2011 3rd IEEE International. :1-4 May, 2011

Relation: 2011 3rd IEEE International Memory Workshop (IMW)

المؤلفون: Goux, L., Opsomer, K., Schuitema, R., Degraeve, R., Muller, R., Detavernier, C., Wouters, D. J., Jurczak, M., Altimime, L., Kittl, J. A.

المصدر: 2011 3rd IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2011 3rd IEEE International. :1-4 May, 2011

Relation: 2011 3rd IEEE International Memory Workshop (IMW)

المؤلفون: Clima, S., Govoreanu, B., Opsomer, K., Velea, A., Avasarala, N. S., Devulder, W., Shlyakhov, I., Donadio, G. L., Witters, T., Kundu, S., Goux, L., Afanasiev, V., Kar, G. S., Pourtois, G.

المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :4.1.1-4.1.4 Dec, 2017

Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Yu, H.Y., Singanamalla, R., Opsomer, K., Augendre, E., Simoen, E., Kittl, J.A., Kubicek, S., Severi, S., Shi, X.P., Brus, S., Zhao, C., de Marneffe, J.F., Locorotondo, S., Shamiryan, D., Van Dal, M., Veloso, A., Lauwers, A., Niwa, M., Maex, K., Meyer, K.D., Absil, P., Jurczak, M., Biesemans, S.

المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :638-641 2005

Relation: International Electron Devices Meeting 2005