-
1دورية أكاديمية
المؤلفون: Hector Garcia, Salvador Duenas, Oscar G. Ossorio, Helena Castan
المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 291-296 (2020)
مصطلحات موضوعية: Conductive filament, multilevel storage, resistive switching memory (RRAM), synaptic devices, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
-
2
المؤلفون: Oscar G. Ossorio, Helena Castán, Guillermo Vinuesa, Pelayo Marín, Benjamin Sahelices, Salvador Dueñas, Héctor García
المصدر: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instnameمصطلحات موضوعية: Permittivity, Diafragmas piezoeléctricos, Materials science, Lead zirconate titanate, Capacitance, Ferroelectricity, Piezoelectricity, chemistry.chemical_compound, Hysteresis, chemistry, Thermoelectric effect, 22 Física, Composite material, Electrical impedance, Titanato de circonato de plomo, 33 Ciencias Tecnológicas
وصف الملف: application/pdf
-
3
المؤلفون: María Helena Castán Lanaspa, Eduardo Perez, Benjamín Sahelices Fernández, Guillermo Vinuesa Sanz, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger, Oscar G. Ossorio, Héctor García, Salvador Dueñas Carazo
المصدر: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instnameمصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, 2210.05 Electroquímica, Nanotechnology, RRAM, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Amorphous solid, Aplicaciones neuromórficas, Neuromorphic Applications, Neuromorphic engineering, 22 Física, Óxido de hafnio, 33 Ciencias Tecnológicas, Hafnium oxide
وصف الملف: application/pdf
-
4
المؤلفون: Guillermo Vinuesa, Francesca Campabadal, Benjamin Sahelices, C. Santa Cruz Gonzalez, Salvador Dueñas, Oscar G. Ossorio, Helena Castán, Mireia Bargallo Gonzalez, Héctor García, J. Jimenez
المصدر: 2021 13th Spanish Conference on Electron Devices (CDE).
مصطلحات موضوعية: Physics, Set (abstract data type), law, Resistive switching, Memristor, Topology, Reset (computing), law.invention
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::534b16229b73a64784455f40fce6839b
https://doi.org/10.1109/cde52135.2021.9455723 -
5
المؤلفون: Christian Wenger, Cristian Zambelli, Daniele Ielmini, Oscar G. Ossorio, Piero Olivo, Mamathamba Kalishettyhalli Mahadevaiah, Francesco Anzalone, Eduardo Perez, Valerio Milo
المصدر: IRPS
مصطلحات موضوعية: Scheme (programming language), Computer science, Reliability (computer networking), hardware neural networks, in-memory computing, multilevel programming, resistance variability, Resistive-switching random access memory (RRAM), weight quantization, 02 engineering and technology, 01 natural sciences, NO, Software, In-Memory Processing, 0103 physical sciences, PE7_5, computer.programming_language, 010302 applied physics, Artificial neural network, business.industry, 021001 nanoscience & nanotechnology, Resistive random-access memory, Key (cryptography), 0210 nano-technology, business, Algorithm, computer, MNIST database
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::933f32fc0539063b5c0607983fd4ece0
https://doi.org/10.1109/irps46558.2021.9405119 -
6
المؤلفون: Salvador Dueñas, Mikko Ritala, Guillermo Vinuesa, M. Leskelaˇ, Helena Castán, Marianna Kemell, Oscar G. Ossorio, Kaupo Kukli, Benjamin Sahelices, Héctor García
المساهمون: Department of Chemistry, Mikko Ritala / Principal Investigator
مصطلحات موضوعية: Materials science, 116 Chemical sciences, 02 engineering and technology, Dielectric, 01 natural sciences, RRAM, Models of neural computation, MIM stack, Niobium oxide, 0103 physical sciences, Materials Chemistry, 22 Física, Electrical and Electronic Engineering, Silicon oxide, 010302 applied physics, Resistive touchscreen, business.industry, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Optoelectronics, NVM, 0210 nano-technology, business, 33 Ciencias Tecnológicas
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf2022835c5853051f7b86b1ec4507b8
https://doi.org/10.1016/j.sse.2021.108114 -
7Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
المؤلفون: Francesca Campabadal, Salvador Dueñas, Oscar G. Ossorio, Mireia Bargallo Gonzalez, Jonathan Boo, Hector H. Garcia, Guillermo Vinuesa, Benjamin Sahelices, Helena Castán
المصدر: Electronics, Vol 10, Iss 2816, p 2816 (2021)
Electronics
Volume 10
Issue 22مصطلحات موضوعية: Cryostat, Materials science, TK7800-8360, Computer Networks and Communications, chemistry.chemical_element, 2202.03 Electricidad, Electric resistors, Ion, Conduction mechanisms, Atomic layer deposition, Neuromorphic computing, Resistive switching, Electrical and Electronic Engineering, business.industry, Liquid nitrogen, Switching circuits, Thermal conduction, Electronic Circuits and Devices, chemistry, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Electroforming, Optoelectronics, ReRAM devices, Electronics, Tin, business, Joule heating
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887068a09b7c0677cba12f93783444a5
https://doi.org/10.3390/electronics10222816 -
8
المؤلفون: Guillermo Vinuesa, Markku Leskelä, Helena Castán, Kaupo Kukli, Hector H. Garcia, Salvador Dueñas, Oscar G. Ossorio
المصدر: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instnameمصطلحات موضوعية: Materials science, business.industry, Optoelectronics, Biasing, Dielectric, Swing, business, Ferroelectricity
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5465233069a2391363179584a2acd3d8
http://uvadoc.uva.es/handle/10324/45139 -
9
المؤلفون: Helena Castán, Salvador Dueñas, Oscar G. Ossorio, Héctor García
المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 291-296 (2020)
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instnameمصطلحات موضوعية: Materials science, 02 engineering and technology, 01 natural sciences, Signal, Multilevel storage, law.invention, Synaptic weight, law, 0103 physical sciences, Transient response, Electrical and Electronic Engineering, Filamento conductivo, 010302 applied physics, business.industry, Conductance, Pulse duration, 021001 nanoscience & nanotechnology, Almacenamiento multinivel, resistive switching memory (RRAM), synaptic devices, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Capacitor, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Biotechnology, Voltage, Conductive filament
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9645fed0b9c8f15e5901372c580a7d2d
https://doi.org/10.1109/jeds.2020.2979293 -
10
المؤلفون: Helena Castán, Oscar G. Ossorio, Salvador Dueñas, Héctor García
المصدر: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instnameمصطلحات موضوعية: Materials science, business.industry, Dispositivos sinápticos, Conductance, Pulse duration, Synaptic devices, Almacenamiento multinivel, Multilevel storage, law.invention, Resistive random-access memory, Capacitor, Amplitude, Neuromorphic engineering, law, Electrode, Optoelectronics, business, Óxido de hafnio, Voltage, Hafnium oxide
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05720038e4f2b6822c679645a420a6a2
https://doi.org/10.1109/laedc49063.2020.9073011