-
1دورية أكاديمية
المؤلفون: Pompl, T., Bashir, T.K., Voelker, M., Last, F., Ostermayr, M.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(3):363-369 Sep, 2023
-
2دورية أكاديمية
المؤلفون: Pompl, T., Henkel, S., Stahl, J., Ostermayr, M.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 19(3):520-528 Sep, 2019
-
3مؤتمر
المؤلفون: Nirschl, Th., Wang, P.-F., Weber, C., Sedlmeir, J., Heinrich, R., Kakoschke, R., Schrufer, K., Holz, J., Pacha, C., Schulz, T., Ostermayr, M., Olbrich, A., Georgakos, G., Ruderer, E., Hansch, W., Schmitt-Landsiedel, D.
المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :195-198 2004
Relation: 2004 International Electron Devices Meeting
-
4دورية أكاديمية
المؤلفون: Pompl, T., Strasser, R., Drexl, S., Ostermayr, M.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 15(4):638-638 Dec, 2015
-
5دورية أكاديمية
المؤلفون: Fischer, T., Amirante, E., Huber, P., Nirschl, T., Olbrich, A., Ostermayr, M., Schmitt-Landsiedel, D.
المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 21(4):534-541 Nov, 2008
-
6مؤتمر
المؤلفون: Arnaud, F., Thean, A., Eller, M., Lipinski, M., Teh, Y.W., Ostermayr, M., Kang, K., Kim, N.S., Ohuchi, K., Han, J-P., Nair, D.R., Lian, J., Uchimura, S., Kohler, S., Miyaki, S., Ferreira, P., Park, J-H., Hamaguchi, M., Miyashita, K., Augur, R., Zhang, Q., Strahrenberg, K., ElGhouli, S., Bonnouvrier, J., Matsuoka, F., Lindsay, R., Sudijono, J., Johnson, F.S., Ku, J.H., Sekine, M., Steegen, A., Sampson, R.
المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009
Relation: 2009 IEEE International Electron Devices Meeting (IEDM)
-
7مؤتمر
المؤلفون: Park, D.-G., Stein, K., Schruefer, K., Lee, Y., Han, J.-P., Li, W., Yin, H., Pacha, C., Kim, N., Ostermayr, M., Eller, M., Kim, S., Kim, K., Han, S., von Arnim, K., Moumen, N., Hatzistergos, M., Tang, T., Loesing, R., Chen, X., Jaeger, D., Zhuang, H., Chen, J., Yan, W., Kanarsky, T., Chowdhury, M., Haetty, Jens, Schepis, D., Chudzik, M., Theon, V.-Y., Samavedam, S., Narayanan, V., Sherony, M., Lindsay, R., Steegen, A., Divakaruni, R., Khare, M.
المصدر: 2009 International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. :90-92 Apr, 2009
Relation: 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
-
8مؤتمر
المؤلفون: Yang, H. S., Wong, R., Hasumi, R., Gao, Y., Kim, N.S., Lee, D. H., Badrudduza, S., Nair, D., Ostermayr, M., Kang, H., Zhuang, H., Li, J., Kang, L., Chen, X., Thean, A., Arnaud, F., Zhuang, L., Schiller, C., Sun, D. P., Teh, Y. W., Wallner, J., Takasu, Y., Stein, K., Samavedam, S., Jaeger, D., Baiocco, C.V., Sherony, M., Khare, M., Lage, C., Pape, J., Sudijono, J., Steegen, A.L., Stiffler, S.
المصدر: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Relation: 2008 IEEE International Electron Devices Meeting (IEDM)
-
9دورية أكاديمية
المؤلفون: Pompl, T., Strasser, R., Drexl, S., Ostermayr, M.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 15(3):289-297 Sep, 2015
-
10مؤتمر
المؤلفون: Krishnan, S., Kwon, U., Moumen, N., Stoker, M.W., Harley, E.C.T., Bedell, S., Nair, D., Greene, B., Henson, W., Chowdhury, M., Prakash, D.P., Wu, E., Ioannou, D., Cartier, E., Na, M.-H., Inumiya, S., Mcstay, K., Edge, L., Iijima, R., Cai, J., Frank, M., Hargrove, M., Guo, D., Kerber, A., Jagannathan, H., Ando, T., Shepard, J., Siddiqui, S., Dai, M., Bu, H., Schaeffer, J., Jaeger, D., Barla, K., Wallner, T., Uchimura, S., Lee, Y., Karve, G., Zafar, S., Schepis, D., Wang, Y., Donaton, R., Saroop, S., Montanini, P., Liang, Y., Stathis, J., Carter, R., Pal, R., Paruchuri, V., Yamasaki, H., Lee, J-H., Ostermayr, M., Han, J-P., Hu, Y., Gribelyuk, M., Park, D.-G., Chen, X., Samavedam, S., Narasimha, S., Agnello, P., Khare, M., Divakaruni, R., Narayanan, V., Chudzik, M.
المصدر: 2011 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2011 IEEE International. :28.1.1-28.1.4 Dec, 2011
Relation: 2011 IEEE International Electron Devices Meeting (IEDM)