المؤلفون: Pompl, T., Bashir, T.K., Voelker, M., Last, F., Ostermayr, M.

المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(3):363-369 Sep, 2023

المؤلفون: Pompl, T., Henkel, S., Stahl, J., Ostermayr, M.

المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 19(3):520-528 Sep, 2019

المؤلفون: Nirschl, Th., Wang, P.-F., Weber, C., Sedlmeir, J., Heinrich, R., Kakoschke, R., Schrufer, K., Holz, J., Pacha, C., Schulz, T., Ostermayr, M., Olbrich, A., Georgakos, G., Ruderer, E., Hansch, W., Schmitt-Landsiedel, D.

المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :195-198 2004

Relation: 2004 International Electron Devices Meeting

المؤلفون: Pompl, T., Strasser, R., Drexl, S., Ostermayr, M.

المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 15(4):638-638 Dec, 2015

المؤلفون: Fischer, T., Amirante, E., Huber, P., Nirschl, T., Olbrich, A., Ostermayr, M., Schmitt-Landsiedel, D.

المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 21(4):534-541 Nov, 2008

المؤلفون: Arnaud, F., Thean, A., Eller, M., Lipinski, M., Teh, Y.W., Ostermayr, M., Kang, K., Kim, N.S., Ohuchi, K., Han, J-P., Nair, D.R., Lian, J., Uchimura, S., Kohler, S., Miyaki, S., Ferreira, P., Park, J-H., Hamaguchi, M., Miyashita, K., Augur, R., Zhang, Q., Strahrenberg, K., ElGhouli, S., Bonnouvrier, J., Matsuoka, F., Lindsay, R., Sudijono, J., Johnson, F.S., Ku, J.H., Sekine, M., Steegen, A., Sampson, R.

المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Park, D.-G., Stein, K., Schruefer, K., Lee, Y., Han, J.-P., Li, W., Yin, H., Pacha, C., Kim, N., Ostermayr, M., Eller, M., Kim, S., Kim, K., Han, S., von Arnim, K., Moumen, N., Hatzistergos, M., Tang, T., Loesing, R., Chen, X., Jaeger, D., Zhuang, H., Chen, J., Yan, W., Kanarsky, T., Chowdhury, M., Haetty, Jens, Schepis, D., Chudzik, M., Theon, V.-Y., Samavedam, S., Narayanan, V., Sherony, M., Lindsay, R., Steegen, A., Divakaruni, R., Khare, M.

المصدر: 2009 International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. :90-92 Apr, 2009

Relation: 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

المؤلفون: Yang, H. S., Wong, R., Hasumi, R., Gao, Y., Kim, N.S., Lee, D. H., Badrudduza, S., Nair, D., Ostermayr, M., Kang, H., Zhuang, H., Li, J., Kang, L., Chen, X., Thean, A., Arnaud, F., Zhuang, L., Schiller, C., Sun, D. P., Teh, Y. W., Wallner, J., Takasu, Y., Stein, K., Samavedam, S., Jaeger, D., Baiocco, C.V., Sherony, M., Khare, M., Lage, C., Pape, J., Sudijono, J., Steegen, A.L., Stiffler, S.

المصدر: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008

Relation: 2008 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Pompl, T., Strasser, R., Drexl, S., Ostermayr, M.

المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 15(3):289-297 Sep, 2015

المؤلفون: Krishnan, S., Kwon, U., Moumen, N., Stoker, M.W., Harley, E.C.T., Bedell, S., Nair, D., Greene, B., Henson, W., Chowdhury, M., Prakash, D.P., Wu, E., Ioannou, D., Cartier, E., Na, M.-H., Inumiya, S., Mcstay, K., Edge, L., Iijima, R., Cai, J., Frank, M., Hargrove, M., Guo, D., Kerber, A., Jagannathan, H., Ando, T., Shepard, J., Siddiqui, S., Dai, M., Bu, H., Schaeffer, J., Jaeger, D., Barla, K., Wallner, T., Uchimura, S., Lee, Y., Karve, G., Zafar, S., Schepis, D., Wang, Y., Donaton, R., Saroop, S., Montanini, P., Liang, Y., Stathis, J., Carter, R., Pal, R., Paruchuri, V., Yamasaki, H., Lee, J-H., Ostermayr, M., Han, J-P., Hu, Y., Gribelyuk, M., Park, D.-G., Chen, X., Samavedam, S., Narasimha, S., Agnello, P., Khare, M., Divakaruni, R., Narayanan, V., Chudzik, M.

المصدر: 2011 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2011 IEEE International. :28.1.1-28.1.4 Dec, 2011

Relation: 2011 IEEE International Electron Devices Meeting (IEDM)