المؤلفون: Nehru Devabharathi, Sandeep Yadav, Inga Dönges, Vanessa Trouillet, Jörg J. Schneider

المصدر: Advanced Materials Interfaces, Vol 11, Iss 16, Pp n/a-n/a (2024)

مصطلحات موضوعية: oxide electronics, p‐type semiconductor, tellurium oxide, thermal evaporation, thin film transistor, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/fcfe212c191e410abb1f387e6dd52399

المؤلفون: Neri-Espinoza, Karen A., Baca-Arroyo, Roberto, Andraca-Adame, Jose A., Pena-Sierra, Ramon

المصدر: 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Electrical Engineering, Computing Science and Automatic Control (CCE), 2019 16th International Conference on. :1-5 Sep, 2019

Relation: 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

المؤلفون: Marques, G.C., Birla, A., Arnal, A., Dehm, S., Ramon, E., Tahoori, M.B., Aghassi-Hagmann, J.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(8):3146-3151 Aug, 2020

المؤلفون: Cadilha Marques, G., Sukuramsyah, A.M., Arnal Rus, A., Bolat, S., Aribia, A., Feng, X., Singaraju, S.A., Ramon, E., Romanyuk, Y., Tahoori, M., Aghassi-Hagmann, J.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(1):187-190 Jan, 2020

المؤلفون: Cadilha Marques, G., von Seggern, F., Dehm, S., Breitung, B., Hahn, H., Dasgupta, S., Tahoori, M.B., Aghassi-Hagmann, J.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(5):2202-2207 May, 2019

المؤلفون: Datt, Gopal, Kotnana, Ganesh, Maddu, Ramu, Vallin, Örjan, 1969, Joshi, Deep C., Peddis, Davide, Barucca, Gianni, Kamalakar, M. Venkata, Sarkar, Tapati

المصدر: ACS Applied Materials and Interfaces. 13(31):37490-37499

مصطلحات موضوعية: one-dimensional nanostructures, bimagnetic nanocomposites, spin insulatronics, oxide electronics, strain coupling

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-453481
https://doi.org/10.1021/acsami.1c09582
https://uu.diva-portal.org/smash/get/diva2:1596368/FULLTEXT01.pdf

المؤلفون: Netzer, Falko P., author, Noguera, Claudine, author

الإتاحة: https://doi.org/10.1093/oso/9780198834618.001.0001

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.

المؤلفون: Klupfel, F.J., Holtz, A., Schein, F., von Wenckstern, H., Grundmann, M.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 62(12):4004-4008 Dec, 2015

المؤلفون: Zhou, Y., Ang, D. S., Kalaga, P. S., Gollu, S. R.

المصدر: 2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :P-GD.8-1-P-GD.8-5 Mar, 2018

Relation: 2018 IEEE International Reliability Physics Symposium (IRPS)