يعرض 1 - 10 نتائج من 38 نتيجة بحث عن '"P/E cycle"', وقت الاستعلام: 1.20s تنقيح النتائج
  1. 1
    مؤتمر
    Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays

    المؤلفون: Saikia, Rashmi, Rai, Himanshu, Mahapatra, Souvik

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  2. 2
    مؤتمر
    Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

    المؤلفون: Woo, Changbeom, Kim, Shinkeun, Park, Jaeyeol, Shin, Hyungcheol, Kim, Haesoo, Choi, Gil-Bok, Seo, Moon-Sik, Noh, Keum Hwan

    المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-6 Apr, 2020

    Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)

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  3. 3
    دورية أكاديمية
    A Stepwise Rate-Compatible LDPC and Parity Management in NAND Flash Memory-Based Storage Devices

    المؤلفون: Lim, S., Lee, J., Kim, G., Ahn, W.H.

    المصدر: IEEE Access Access, IEEE. 8:162491-162506 2020

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  4. 4
    دورية أكاديمية
    RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

    المؤلفون: Ma, R., Wu, F., Zhang, M., Lu, Z., Wan, J., Xie, C.

    المصدر: IEEE Access Access, IEEE. 7:44696-44708 2019

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  5. 5
    دورية أكاديمية
    A Stepwise Rate-Compatible LDPC and Parity Management in NAND Flash Memory-Based Storage Devices

    المؤلفون: Seung-Ho Lim, Jae-Bin Lee, Geon-Myeong Kim, Woo Hyun Ahn

    المصدر: IEEE Access, Vol 8, Pp 162491-162506 (2020)

    مصطلحات موضوعية: NAND flash memory, flash storage, P/E cycle, RC LDPC, PCHK, parity, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/9186119/; https://doaj.org/toc/2169-3536

    URL الوصول: https://doaj.org/article/d073617139cd481b9347c7272d78d5de

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  6. 6
    دورية أكاديمية
    Hybrid RAID: A Solution for Enhancing the Reliability of SSD-Based RAIDs

    المؤلفون: Chamazcoti, S.A., Miremadi, S.G.

    المصدر: IEEE Transactions on Multi-Scale Computing Systems IEEE Trans. Multi-Scale Comp. Syst. Multi-Scale Computing Systems, IEEE Transactions on. 3(3):181-192 Sep, 2017

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  7. 7
    دورية أكاديمية
    RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

    المؤلفون: Ruixiang Ma, Fei Wu, Meng Zhang, Zhonghai Lu, Jiguang Wan, Changsheng Xie

    المصدر: IEEE Access, Vol 7, Pp 44696-44708 (2019)

    مصطلحات موضوعية: NAND flash, P/E cycle, retention time, RBER, machine learning, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/8682045/; https://doaj.org/toc/2169-3536

    URL الوصول: https://doaj.org/article/f7e6879416154a01994b6a01d8a862a8

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  8. 8
    دورية أكاديمية
    Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

    المؤلفون: Seung-Ho Lim, Ki-Woong Park

    المصدر: Sensors, Vol 20, Iss 10, p 2952 (2020)

    مصطلحات موضوعية: NAND flash memory, P/E cycle, compression, adaptive ECC, RAID scattering, stripe log, Chemical technology, TP1-1185

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1424-8220/20/10/2952; https://doaj.org/toc/1424-8220

    URL الوصول: https://doaj.org/article/ccda72f71ab0429da3f104022452c3f1

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  9. 9
    دورية أكاديمية
    NAND flash service lifetime estimate with recovery effect and retention time relaxation

    المؤلفون: Bu, Kai / 步凯, Chen, Yi-ran / 陈怡然, Xu, Hui / 徐晖, Yi, Wei / 易伟, Xie, Qi-you / 谢启友

    المصدر: Journal of Central South University: Science & Technology of Mining and Metallurgy. August 2014 21(8):3205-3213

    Find this article in full text from Springer Verlag. Full Text Finder
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  10. 10
    RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

    المؤلفون: Meng Zhang, Jiguang Wan, Zhonghai Lu, Ma Ruixiang, Changsheng Xie, Fei Wu

    المصدر: IEEE Access, Vol 7, Pp 44696-44708 (2019)

    مصطلحات موضوعية: Scheme (programming language), General Computer Science, Computer science, Nand flash memory, NAND gate, 02 engineering and technology, 01 natural sciences, Flash (photography), Data integrity, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Overhead (computing), General Materials Science, RBER, computer.programming_language, Block (data storage), 010302 applied physics, P/E cycle, Hardware_MEMORYSTRUCTURES, General Engineering, NAND flash, 020202 computer hardware & architecture, Reliability engineering, Support vector machine, machine learning, retention time, lcsh:Electrical engineering. Electronics. Nuclear engineering, Error detection and correction, lcsh:TK1-9971, computer

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d972a9fa931ab1ea98eb307592a8366
    https://doi.org/10.1109/access.2019.2909567

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