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المؤلفون: J.H. Lee, C.H. Chou, P.J. Liao, Y.K. Chang, H.H. Huang, T.Y. Lin, Y.S. Liu, C.H. Nien, D.H. Hou, T.H. Hou, Jun He
المصدر: 2022 International Electron Devices Meeting (IEDM).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::90aa0ee669c95194cfeb16eab428c173
https://doi.org/10.1109/iedm45625.2022.10019519 -
2
المصدر: 2016 IEEE International Integrated Reliability Workshop (IIRW).
مصطلحات موضوعية: Stress (mechanics), Materials science, Dependent source, business.industry, Logic gate, Electrical engineering, Optoelectronics, Degradation (geology), Stress conditions, business, Junction area, Quantum tunnelling
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b5a300d8f9d3c7f2502894ea192e7ac7
https://doi.org/10.1109/iirw.2016.7904893 -
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المصدر: ESMO Open. 3:A258
مصطلحات موضوعية: Hepatitis, Cancer Research, business.industry, Physiology, chemistry.chemical_element, Methylation, medicine.disease, Lower risk, medicine.disease_cause, Oncology, chemistry, DNA methylation, medicine, Risk factor, Liver cancer, business, Carcinogenesis, Arsenic
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4مؤتمر
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
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المصدر: European Journal of Cancer. 61:S154
مصطلحات موضوعية: Oncology, Cancer Research, Pathology, medicine.medical_specialty, Inorganic arsenic, business.industry, Methylation, medicine.disease, Population based cohort, Dose–response relationship, Internal medicine, medicine, business, Lung cancer
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المؤلفون: P.J. Liao, Chia Lin Chen, Y.S. Tsai, J.W. Young, C.J. Wang, K. Wu
المصدر: 2008 IEEE International Reliability Physics Symposium.
مصطلحات موضوعية: Materials science, business.industry, Electric breakdown, Electrical engineering, Oxide, Time-dependent gate oxide breakdown, chemistry.chemical_compound, Reliability (semiconductor), chemistry, Logic gate, Optoelectronics, business, Thin oxide, Voltage drop, Hot carrier effect
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::70f30c8f22632a43a8951c47d4395383
https://doi.org/10.1109/relphy.2008.4558888 -
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المؤلفون: P.J. Liao, K. Wu, Chia Lin Chen, C.J. Wang
المصدر: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
مصطلحات موضوعية: Materials science, business.industry, Analytical chemistry, chemistry.chemical_element, Time-dependent gate oxide breakdown, Power law, Acceleration, chemistry, MOSFET, Optoelectronics, Breakdown voltage, business, Boron, Quantum tunnelling, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bdbbe8eadacaec2dd3f4a583e78a0a57
https://doi.org/10.1109/relphy.2007.369957 -
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المؤلفون: A. Oates, P.J. Liao, Kenneth Wu, J.J. Wang, Chin-Yuan Ko, Y.S. Tsai
المصدر: 2004 IEEE International Reliability Physics Symposium. Proceedings.
مصطلحات موضوعية: Thin gate oxide, Materials science, Electrostatic discharge, business.industry, Electrical engineering, Oxide, Time-dependent gate oxide breakdown, Stress (mechanics), chemistry.chemical_compound, chemistry, Gate oxide, MOSFET, Optoelectronics, business, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::224bb0c5a423d2a5db574eb8352b9beb
https://doi.org/10.1109/relphy.2004.1315403 -
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المصدر: 2004 IEEE International Reliability Physics Symposium. Proceedings.
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Time-dependent gate oxide breakdown, Hardware_PERFORMANCEANDRELIABILITY, Noise margin, CMOS, Gate oxide, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Inverter, Breakdown voltage, business, AND gate, Hardware_LOGICDESIGN, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6a25a14a6d12b7eb7ce9ae0602d8d1a4
https://doi.org/10.1109/relphy.2004.1315405 -
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المصدر: 7th International Symposium on Plasma- and Process-Induced Damage.
مصطلحات موضوعية: Temperature gradient, Thermal conductivity, Materials science, Condensed matter physics, Depletion region, Gate oxide, Thermoelectric effect, Analytical chemistry, Breakdown voltage, Time-dependent gate oxide breakdown, Thermal conduction
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4ce33a1bab2d780f5f7022edccca7c41
https://doi.org/10.1109/ppid.2002.1042609