المؤلفون: Gardes, F. Y., De Paoli, Greta, Faneca, Joaquin, Zeimpekis, Ioannis, Bucio, Thalia Dominguez, Ilie, Stefan, Shoaa, Afrooz, Hewak, Daniel W., Flint, A.I., Gates, J. C.

المصدر: 2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2022 Conference on. :1-2 Jul, 2022

Relation: 2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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المؤلفون: Novak, A. V.^{Aff1, Aff2}, Novak, V. R., Dedkova, A. A., Gusev, E. E.

المصدر: Semiconductors. 52(15):1953-1957

المؤلفون: Ozhan Koybasi, Ørnulf Nordseth, Trinh Tran, Marco Povoli, Mauro Rajteri, Carlo Pepe, Eivind Bardalen, Farshid Manoocheri, Anand Summanwar, Mikhail Korpusenko, Michael N. Getz, Per Ohlckers, Erkki Ikonen, Jarle Gran

المصدر: Sensors, Vol 21, Iss 23, p 7807 (2021)

مصطلحات موضوعية: silicon photodetector, inversion layer photodiode, induced-junction, surface passivation, PECVD silicon nitride, radiometry, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1424-8220/21/23/7807; https://doaj.org/toc/1424-8220

URL الوصول: https://doaj.org/article/7d9fe49476d145a0bcba446e5077d374

المؤلفون: Trinh Tran, Ozhan Koybasi, Carlo Pepe, Erkki Ikonen, Marco Povoli, Michael N. Getz, Jarle Gran, Anand Summanwar, Per Ohlckers, Mauro Rajteri, Farshid Manoocheri, Ornulf Nordseth, Eivind Bardalen, Mikhail Korpusenko

المساهمون: SINTEF, Institute for Energy Technology, Justervesenet, INRiM, University of South-Eastern Norway, Metrology Research Institute, University of Oslo, Aalto-yliopisto, Aalto University

المصدر: Sensors; Volume 21; Issue 23; Pages: 7807
Sensors
Koybasi, O, Nordseth, Ø, Tran, T, Povoli, M, Rajteri, M, Pepe, C, Bardalen, E, Manoocheri, F, Summanwar, A, Korpusenko, M, Getz, M N, Ohlckers, P, Ikonen, E & Gran, J 2021, ' High performance predictable quantum efficient detector based on induced-junction photodiodes passivated with SiO 2 /SinX ', Sensors, vol. 21, no. 23, 7807 . https://doi.org/10.3390/s21237807
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 7807, p 7807 (2021)

مصطلحات موضوعية: Surface passivation, Materials science, Silicon photodetector, Passivation, silicon photodetector, Inversion layer photodiode, Photodetector, Substrate (electronics), TP1-1185, radiometry, Biochemistry, Article, Analytical Chemistry, law.invention, Primary standard, induced-junction, law, Plasma-enhanced chemical vapor deposition, Electrical and Electronic Engineering, Thin film, Radiometry, Instrumentation, surface passivation, Optical power, optical power, primary standard, business.industry, Chemical technology, inversion layer photodiode, PECVD silicon nitride, predictable quantum efficiency, Carrier lifetime, Induced-junction, Atomic and Molecular Physics, and Optics, Photodiode, Optoelectronics, Quantum efficiency, business, Predictable quantum efficiency

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::815aa18f5874b8fd956d5be706685f60

المؤلفون: Koybasi, Ozhan, Nordseth, Ørnulf, Tran, Trinh, Povoli, Marco, Rajteri, Mauro, Pepe, Carlo, Bardalen, Eivind, Manoocheri, Farshid, Summanwar, Anand, Korpusenko, Mikhail, Getz, Michael Norderhaug, Ohlckers, Per, Ikonen, Erkki, Gran, Jarle

الإتاحة: https://hdl.handle.net/11250/2993459

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المؤلفون: Khaliq, M. A., Shams, Q. A., Brown, W. D., Naseem, H. A.

المصدر: Journal of Electronic Materials. September 1988 17(5):355-359

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