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المصدر: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2023 - IEEE 53rd European. :117-120 Sep, 2023

Relation: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

المؤلفون: Fenouillet-Beranger, C., Brunet, L., Batude, P., Andrieu, F., Micout, J., Previtali, B., Pedini, J-M., Mazzocchi, V., Acosta-Alba, P., Kerdiles, S., Beugin, V., Guerin, C., Vizioz, C., Ponthenier, F., Rambal, N., Casse, M., Garros, X., Chevalliez, S., Aussenac, F., Vinet, M.

المصدر: 2019 Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2019. :249-251 Mar, 2019

Relation: 2019 Electron Devices Technology and Manufacturing Conference (EDTM)

المؤلفون: Lachal, L.^{Aff1, IDs4358002200468z_cor1}, Plantier, C., Torregrosa, F., Aubert, C., Pedini, J. M., Borvon, G., Coig, M., Milesi, F., Mazen, F.

المصدر: MRS Advances. 7(36):1390-1394

المؤلفون: Iadanza, S.^{Aff1, Aff2, IDs41598022215786_cor1}, Devarapu, G. C. R.^{Aff1, Aff2}, Blake, A., Alba, P. Acosta, Pedini, J.-M., O’Faolain, L.^{Aff1, Aff2}

المصدر: Scientific Reports. 12(1)

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المصدر: 2009 International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. :111-112 Apr, 2009

Relation: 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

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المصدر: In Solid State Electronics July 2014 97:82-87

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المصدر: In Microelectronic Engineering 2007 84(9):1886-1889

المؤلفون: Fenouillet-Beranger, C., Brunet, L., Batude, P., Brevard, L., Garros, X., Casse, M., Lacord, J., Sklenard, B., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Vizioz, C., Besson, P., Gassilloud, R., Pedini, J.-M., Kanyandekwe, J., Mazen, F., Magalhaes-Lucas, A., Cavalcante, C., Bosch, D.

المصدر: IEEE Transactions on Electron Devices; Jul2021, Vol. 68 Issue 7, p3142-3148, 7p

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المؤلفون: Bonnevialle, A., Reboh, S., Royer, C. Le, Morand, Y., Hartmann, J.-M., Rouchon, D., Pedini, J.-M., Tabone, C., Rambal, N., Payet, A., Plantier, C., Boeuf, F., Haond, M., Claverie, A., Vinet, M.

المصدر: Physica Status Solidi (C); Dec2016, Vol. 13 Issue 10-12, p740-745, 6p

مصطلحات موضوعية: SILICON, ELECTRON mobility, METAL crystal growth, RECRYSTALLIZATION (Metallurgy), COMPLEMENTARY metal oxide semiconductors