المؤلفون: Jiang Guo, Pengyu Long, Yong Zhao, Haojie Xu, Zhaoyuan Yang, Jianjun Wang, Tingting Li, Jiwu Tang

المصدر: Micromachines, Vol 15, Iss 5, p 614 (2024)

مصطلحات موضوعية: thin-walled bearing, grinding, machining quality, machining deformation, deformation mechanism, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/5/614; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/70e514bcf45a4810bf3dec6770bd8029

المؤلفون: Jiang Guo, Yong Zhao, Pengyu Long, Jinglin Wang, Benyu Du, Bilal Mustafa Rajpar, Zhuji Jin, Jiwu Tang

المصدر: Frontiers in Materials, Vol 10 (2023)

مصطلحات موضوعية: bearing spacer ring, performance testing, characteristics, surface properties, serviceability, Technology

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/fmats.2023.1202041/full; https://doaj.org/toc/2296-8016

URL الوصول: https://doaj.org/article/66d99230eea0484a94be7a7843ecfe4b

المؤلفون: Yong Zhao, Shuo Wang, Wenhui Yu, Pengyu Long, Jinlong Zhang, Wentao Tian, Fei Gao, Zhuji Jin, Hongyu Zheng, Chunjin Wang, Jiang Guo

المصدر: Micromachines, Vol 14, Iss 4, p 808 (2023)

مصطلحات موضوعية: NdFeB, laser processing, simulation, microstructure formation mechanism, melt pool flow evolution, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/4/808; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/7bdcada901574a2d8d669a46b79f18b4

المؤلفون: Jun Z. Huang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck, Mark J. W. Rodwell

المصدر: IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 410-415 (2016)

مصطلحات موضوعية: P-type TFET (pTFET), heterojunction TFET (HJ TFET), triple-heterojunction TFET (3HJ TFET), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/7582443/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/55bcf09dceb447e79c8ee0c032d210fe

المؤلفون: Huang, Jun Z., Pengyu Long, Ilatikhameneh, Hesameddin, Ameen, Tarek, Rahman, Rajib, Povolotskyi, Michael, Rodwell, Mark J. W., Klimeck, Gerhard

المصدر: 2016 Progress in Electromagnetic Research Symposium (PIERS) Progress in Electromagnetic Research Symposium (PIERS). :914-914 Aug, 2016

Relation: 2016 Progress in Electromagnetic Research Symposium (PIERS)

المؤلفون: Huang, Jun Z., Yu Wang, Pengyu Long, Yaohua Tan, Povolotskyi, Michael, Klimeck, Gerhard

المصدر: 2016 Progress in Electromagnetic Research Symposium (PIERS) Progress in Electromagnetic Research Symposium (PIERS). :2604-2604 Aug, 2016

Relation: 2016 Progress in Electromagnetic Research Symposium (PIERS)

المؤلفون: Jie Jiang, Pengyu Long, Lijia Xie, Zhiming Zheng

المصدر: 2022 IEEE International Conference on Agents (ICA).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0f573ebd7f7523ef03ffd16ee31a64d8
https://doi.org/10.1109/ica55837.2022.00017

المؤلفون: Pengyu Long, Huang, Jun Z., Zhengping Jiang, Gerhard Klimeck, Rodwell, Mark J. W., Povolotskyi, Michael

المصدر: Journal of Applied Physics; 2016, Vol. 120 Issue 22, p224501-1-224501-8, 8p, 2 Diagrams, 1 Chart, 5 Graphs

مصطلحات موضوعية: SUPERLATTICES, METAL oxide semiconductor field-effect transistors, CARRIER density, ELECTRON scattering, SCATTERING (Physics), DECOHERENCE (Quantum mechanics)

المؤلفون: Gerhard Klimeck, Mark J. W. Rodwell, Jun Z. Huang, Pengyu Long, Michael Povolotskyi

المصدر: IEEE Electron Device Letters. 37:345-348

مصطلحات موضوعية: 010302 applied physics, Physics, Condensed matter physics, Transistor, Heterojunction, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Effective mass (solid-state physics), law, 0103 physical sciences, Field-effect transistor, High current, Electrical and Electronic Engineering, 0210 nano-technology, p–n junction, Quantum tunnelling, Bar (unit)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c7f5992de41f3f68395e5c4a2c3cb39a
https://doi.org/10.1109/led.2016.2523269

المؤلفون: Gerhard Klimeck, Michael Povolotskyi, Jun Z. Huang, Mark J. W. Rodwell, Pengyu Long

المصدر: IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 410-415 (2016)

مصطلحات موضوعية: Silicon, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Effective mass (solid-state physics), heterojunction TFET (HJ TFET), 0103 physical sciences, MOSFET, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Electrical and Electronic Engineering, Quantum tunnelling, 010302 applied physics, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Scattering, Doping, Heterojunction, 021001 nanoscience & nanotechnology, triple-heterojunction TFET (3HJ TFET), Electronic, Optical and Magnetic Materials, chemistry, Density of states, lcsh:Electrical engineering. Electronics. Nuclear engineering, Atomic physics, 0210 nano-technology, lcsh:TK1-9971, Biotechnology, P-type TFET (pTFET)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be3a143efe19537834843166d8750ff0
https://ieeexplore.ieee.org/document/7582443/