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1
المؤلفون: Philip L. Hower, Taylor R. Efland, Sameer Pendharkar
المصدر: 2010 International Electron Devices Meeting.
مصطلحات موضوعية: Materials science, Electrostatic discharge, Thermal conductivity, Silicon, chemistry, Logic gate, Electric field, Schottky diode, chemistry.chemical_element, Nanotechnology, Power semiconductor device, Critical field, Engineering physics
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3e916cb9643bac908eea03babb6b0ace
https://doi.org/10.1109/iedm.2010.5703352 -
2
المؤلفون: P. Chakraborty, G. Collins, Philip L. Hower
المصدر: 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
مصطلحات موضوعية: chemistry.chemical_compound, Materials science, Electrostatic discharge, chemistry, Gate oxide, Charged-device model, Oxide, Electronic engineering, Breakdown voltage, High voltage, Device simulation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a8aa285bce1086fe64c57f4ffe80eb20
https://doi.org/10.1109/eosesd.2007.4401733 -
3
المؤلفون: Q. Wang, Sameer Pendharkar, Binghua Hu, Philip L. Hower, John K. Arch, John Lin, Kaiyuan Chen, Joe R. Trogolo, Tathagata Chatterjee, Joseph A. Devore
المصدر: Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
مصطلحات موضوعية: LDMOS, Yield (engineering), Materials science, Hydrogen, Condensed matter physics, business.industry, Electrical engineering, chemistry.chemical_element, Sense (electronics), Power (physics), chemistry, Current (fluid), Power MOSFET, Anomaly (physics), business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1f67812264d7bf54a797812965c80308
https://doi.org/10.1109/ispsd.2007.4294933 -
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المؤلفون: John Lin, Philip L. Hower
المصدر: 2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
مصطلحات موضوعية: LDMOS, Electron mobility, Materials science, Heterostructure-emitter bipolar transistor, business.industry, Transistor, Hardware_PERFORMANCEANDRELIABILITY, equipment and supplies, Carrier current, law.invention, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Field-effect transistor, business, Saturation (magnetic)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c5ceac698da74626df15992891b95a64
https://doi.org/10.1109/ispsd.2006.1666078 -
5
المؤلفون: Sameer Pendharkar, Philip L. Hower
المصدر: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
مصطلحات موضوعية: LDMOS, Thermal runaway, business.industry, Computer science, Transistor, Electrical engineering, Term (time), law.invention, Safe operating area, CMOS, law, Electronic engineering, Power MOSFET, business, Hot-carrier injection
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::30277a1e7bdeca4129b969a7c066a6a9
https://doi.org/10.1109/relphy.2005.1493145 -
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المؤلفون: Sameer Pendharkar, Philip L. Hower, R. Steinhoff, J. Brodsky
المصدر: Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
مصطلحات موضوعية: Engineering, Electrostatic discharge, business.industry, Electrical engineering, High voltage, Hardware_PERFORMANCEANDRELIABILITY, Smart power, Robustness (computer science), Power electronics, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, business, Power-system protection, Output device, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2026fb0d27e4b63f68d5d06d56a041a0
https://doi.org/10.1109/ispsd.2005.1488022 -
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المؤلفون: Philip L. Hower
المصدر: Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
مصطلحات موضوعية: LDMOS, Safe operating area, Engineering, CMOS, Electrical resistance and conductance, business.industry, Power electronics, Electronic engineering, Breakdown voltage, Integrated circuit design, Power MOSFET, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0b95b0990b384ac1ef22597df24ed64d
https://doi.org/10.1109/ispsd.2002.1016159 -
8
المؤلفون: Taylor R. Efland, Philip L. Hower, J. Brodsky, Sameer Pendharkar, Steven L. Merchant, C.-Y. Tsai, R. Steinhoff
المصدر: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
مصطلحات موضوعية: Safe operating area, LDMOS, Materials science, Avalanche diode, Heterostructure-emitter bipolar transistor, business.industry, Bipolar junction transistor, Optoelectronics, Field-effect transistor, Insulated-gate bipolar transistor, business, Avalanche breakdown
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e523155987963ac30795b8b9b871f761
https://doi.org/10.1109/ispsd.2001.934578 -
9
المؤلفون: W. Grose, R. Steinhoff, Philip L. Hower, J. Brodsky, Joseph A. Devore, Sameer Pendharkar
المصدر: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
مصطلحات موضوعية: Materials science, Filamentation, Simple (abstract algebra), business.industry, Semiconductor device modeling, Optoelectronics, Power semiconductor device, Semiconductor device, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b9e3ac5f541d1189078d04cf24e84a0b
https://doi.org/10.1109/ispsd.2001.934635 -
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المؤلفون: Joseph A. Devore, J. Brodsky, Philip L. Hower, Sameer Pendharkar, B. Grose, R. Steinhoff
المصدر: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
مصطلحات موضوعية: LDMOS, Engineering, Electrostatic discharge, business.industry, Bipolar junction transistor, law.invention, Protein filament, law, Robustness (computer science), Electronic engineering, Power semiconductor device, Resistor, Power MOSFET, business, Simulation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4e072706bcc51bc45b057d24fd2a1717
https://doi.org/10.1109/ispsd.2001.934580