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1دورية أكاديمية
المؤلفون: An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo
المصدر: Micromachines, Vol 14, Iss 8, p 1582 (2023)
مصطلحات موضوعية: atomic layer etching (ALE), MIS-HEMT, gate surface roughness, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, Jen-Inn Chyi
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 130-136 (2021)
مصطلحات موضوعية: AlInGaN, GaN-on-Si, HEMT, JFOM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
المصدر: Micromachines, Vol 12, Iss 10, p 1159 (2021)
مصطلحات موضوعية: gallium nitride, high-electron mobility transistor, heterogeneous integration, SOI, QST, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
المصدر: Micromachines, Vol 12, Iss 7, p 737 (2021)
مصطلحات موضوعية: gallium nitride, high-electron mobility transistor, CMOS-compatible Au-free process, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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5
المؤلفون: An-Chen Liu, Yu-Wen Huang, Chao-Hsu Lin, Yi-Jun Dong, Yung-Yu Lai, Chao-Cheng Ting, Po-Tsung Tu, Po-Chun Yeh, Hsin-Chu Chen, Hao-Chung Kuo
المصدر: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::04e4a83ea470852e9d65d68fd409e9d2
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134028 -
6
المؤلفون: Hui-Yu Chen, Po-Tsung Tu, Po-Chun Yeh, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Chih-I Wu, Indraneel Sanyal, Jen-Inn Chyi
المصدر: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3903e90a89f208f8ed16d6b008a86fc0
https://doi.org/10.1109/vlsi-tsa54299.2022.9771040 -
7
المؤلفون: Jen-Inn Chyi, Po-Chun Yeh, Kun-Ming Chen, Indraneel Sanyal, Yu-Chen Wan, Po-Tsung Tu, En-Shuo Lin
المصدر: IEEE Journal of the Electron Devices Society. 9:130-136
مصطلحات موضوعية: 010302 applied physics, Power gain, Materials science, Condensed matter physics, Silicon, 020208 electrical & electronic engineering, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Substrate (electronics), 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Johnson's figure of merit, chemistry, Electrical resistivity and conductivity, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Breakdown voltage, Electrical and Electronic Engineering, Biotechnology
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8
المؤلفون: Hsin-Yun Yang, Shyh-Shyuan Sheu, Fu Yi-Keng, Li-Heng Lee, Yuh-Renn Wu, Po-Chun Yeh, Po-Tsung Tu, Pei-Jer Tzeng, Hsueh-Hsing Liu, Chien-Hua Hsu, Wei-Chung Lo, Chih-I Wu
المصدر: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
مصطلحات موضوعية: Aluminum gallium nitride, chemistry.chemical_compound, Materials science, Si substrate, CMOS, chemistry, business.industry, Optoelectronics, Wafer, Gallium nitride, High-electron-mobility transistor, business, Cmos compatible
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2a45993b6e7297dcb166fb6641299799
https://doi.org/10.1109/vlsi-tsa51926.2021.9440075 -
9
المؤلفون: Jen-Inn Chyi, Po-Tsung Tu, Chih-I Wu, Po-Chun Yeh, Indraneel Sanyal, Li-Heng Lee, Heng-Yuan Lee
المصدر: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
مصطلحات موضوعية: Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Gallium nitride, High-electron-mobility transistor, law.invention, chemistry.chemical_compound, chemistry, law, Optoelectronics, Wafer, business, Power density
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1b108ca06f695211e40394685af0148e
https://doi.org/10.1109/vlsi-tsa48913.2020.9203728 -
10
المؤلفون: Catherine Langpoklakpam, Hao-Chung Kuo, Ya Ting Chang, Lung Hsing Hsu, Po Tsung Tu, Chun Hsiung Lin, An Jye Tzou, Edward Yi Chang, An Chen Liu, Yu Wen Huang
المصدر: Micromachines
Micromachines, Vol 12, Iss 737, p 737 (2021)مصطلحات موضوعية: Materials science, Gallium nitride, Review, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, chemistry.chemical_compound, Power electronics, 0103 physical sciences, TJ1-1570, Hardware_INTEGRATEDCIRCUITS, Mechanical engineering and machinery, Electronics, Electrical and Electronic Engineering, Metal gate, 010302 applied physics, high-electron mobility transistor, CMOS-compatible Au-free process, Mechanical Engineering, Amplifier, Schottky diode, 021001 nanoscience & nanotechnology, Engineering physics, chemistry, CMOS, Control and Systems Engineering, gallium nitride, 0210 nano-technology