المؤلفون: Jyh-Chyurn Guo, Hsu, C.C.-H., Pole-Shang Lin, Chung, S.S.

المصدر: 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on. :256-260 1993

Relation: 1993 International Symposium on VLSI Technology, Systems, and Applications

المؤلفون: Jyh-Ren Wang, Pole-Shang Lin

المصدر: 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on. :34-37 1993

Relation: 1993 International Symposium on VLSI Technology, Systems, and Applications

المؤلفون: Pole-Shang Lin, Ruey-Kuen Perng, To-Sing Li, Pao-Chu Chen, Yun-Huei Ju

المصدر: 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on. :138-141 1993

Relation: 1993 International Symposium on VLSI Technology, Systems, and Applications

المؤلفون: Pole-Shang Lin, Chih-Hsien Wang

المصدر: 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on. :201-204 1991

Relation: 1991 International Symposium on VLSI Technology, Systems, and Applications

المؤلفون: Pole-Shang Lin, Ching-Yuan Wu

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 38(6):1376-1383 Jun, 1991

المؤلفون: Pole-Shang Lin, Chia-Haur Chang

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 12(11):638-640 Nov, 1991

المؤلفون: Pole-Shang Lin, To-Sing Li

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 15(4):138-139 Apr, 1994

المؤلفون: Pole-Shang Lin, Ching-Yuan Wu

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 34(9):1947-1956 Sep, 1987

المؤلفون: Pole-Shang Lin, Ruey-Kuen Perng, Ching-Yuan Wu

المصدر: Solid-State Electronics. 34:635-647

مصطلحات موضوعية: Scheme (programming language), Very-large-scale integration, Engineering, Computer simulation, business.industry, Computation, Circuit design, Boundary (topology), Condensed Matter Physics, Electronic, Optical and Magnetic Materials, CMOS, Materials Chemistry, Central processing unit, Electrical and Electronic Engineering, business, computer, Simulation, computer.programming_language

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a715618f5eb4a446c7d0de3321e70f56
https://doi.org/10.1016/0038-1101(91)90138-o

المؤلفون: Jyh-Chyurn Guo, Pole-Shang Lin, Ching-Yuan Wu

المصدر: IEEE Transactions on Electron Devices. 37:666-674

مصطلحات موضوعية: Materials science, Channel length modulation, business.industry, Transconductance, engineering.material, Electronic, Optical and Magnetic Materials, Polycrystalline silicon, Thin-film transistor, Gate oxide, Electronic engineering, engineering, Rectangular potential barrier, Optoelectronics, Grain boundary, Field-effect transistor, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1f16db9c17d886d24fd2f749b044c4f2
https://doi.org/10.1109/16.47771