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المؤلفون: Satyanand Nalam, Xiaofei Wang, Daeyeon Kim, Ayush Shrivastava, Zheng Guo, Pramod Kolar, Jinal Shah, Eric Karl, Jami Wiedemer, Gwanghyeon Baek
المصدر: 2018 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: Materials science, business.industry, Overhead (engineering), Transistor, Industry standard, Electrical engineering, Power (physics), law.invention, Reduction (complexity), chemistry.chemical_compound, chemistry, law, Silicon carbide, Static random-access memory, Operating voltage, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b26249d2c9ba3c0113a6f1c42f6b6db8
https://doi.org/10.1109/vlsit.2018.8510704 -
2A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation
المؤلفون: Uddalak Bhattacharya, Fatih Hamzaoglu, Yong-Gee Ng, Yih Wang, Pramod Kolar, Kevin Zhang, Eric Karl, Hyunwoo Nho
المصدر: ISSCC
مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Circuit design, Integrated circuit, law.invention, Process variation, CMOS, law, Low-power electronics, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering, Circuit complexity, business, Low voltage
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3
المؤلفون: Yong-Gee Ng, Kevin Zhang, Yih Wang, Pramod Kolar, Liqiong Wei, Fatih Hamzaoglu, Uddalak Bhattacharya
المصدر: IEEE Design & Test of Computers. 28:22-31
مصطلحات موضوعية: Engineering, Bit cell, Hardware_MEMORYSTRUCTURES, business.industry, Embedded memory, Hardware_PERFORMANCEANDRELIABILITY, Process variation, Hardware and Architecture, Low-power electronics, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering, business, Nanoscopic scale, Scaling, Software, Voltage
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4
المؤلفون: Uddalak Bhattacharya, Liqiong Wei, Mark T. Bohr, Yih Wang, Pramod Kolar, Yong-Gee Ng, Fatih Hamzaoglu, Ying Zhang, Kevin Zhang
المصدر: IEEE Journal of Solid-State Circuits. 45:103-110
مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Transistor, Electrical engineering, High voltage, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, law.invention, Non-volatile memory, CMOS, Hardware_GENERAL, law, Low-power electronics, Hardware_INTEGRATEDCIRCUITS, Static random-access memory, Electrical and Electronic Engineering, business, Leakage (electronics)
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5
المؤلفون: J. Lin, Sarvesh H. Kulkarni, Hafez Walid M, Yih Wang, F. Hamzaoglu, Uddalak Bhattacharya, M. Bohr, T. Coan, Chia-Hong Jan, Kevin Zhang, Pramod Kolar, Ian R. Post, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Zhanping Chen, Hong Jo Ahn
المصدر: IEEE Journal of Solid-State Circuits. 43:172-179
مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, law.invention, CMOS, Hardware_GENERAL, Memory cell, law, Low-power electronics, Hardware_INTEGRATEDCIRCUITS, Static random-access memory, Electrical and Electronic Engineering, business, Low voltage, Hardware_LOGICDESIGN, Leakage (electronics)
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6
المؤلفون: Pramod Kolar, Subho Chatterjee, Gunjan H. Pandya, Jae Y Ko, Wei Jian Chan
المصدر: CICC
مصطلحات موضوعية: Computer science, Transistor, Semiconductor device modeling, Hardware_PERFORMANCEANDRELIABILITY, law.invention, CMOS, Hardware_GENERAL, law, Shallow trench isolation, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Radio frequency, Static random-access memory, Voltage, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::45b178d7aa27456c67d27abd982a4303
https://doi.org/10.1109/cicc.2014.6946133 -
7
المؤلفون: Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
المصدر: 2010 IEEE International Solid-State Circuits Conference - (ISSCC).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f41f4dfb6752fb8b087c3474581e590a
https://doi.org/10.1109/isscc.2010.5433816 -
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المؤلفون: J.-Y. Yeh, M. Prince, L. Rockford, Kevin Zhang, J. Lin, Pramod Kolar, B. Landau, H. Tashiro, Ian R. Post, Seung Hwan Lee, N. Lazo, A. Schmitz, S. Gannavaram, P. Bai, P. Vandervoorn, Zhanping Chen, S. Ma, J. Xu, G. Curello, K. Komeyli, L. Yang, Nick Lindert, J. Rizk, C.-H. Jan, S.-J. Choi, J. Yip, Yuegang Zhang, M. Agostinelli, Joodong Park, Curtis Tsai, Hafez Walid M, A. Lake, K. Phoa, N. Pradhan, H. Deshpande, C. Meining, M. Kang, L. McGill, A. Paliwal, G. Sacks, T. Leo, M. Buehler, U. Jalan, Abdur Rahman
المصدر: 2009 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Engineering, business.industry, Gate dielectric, Transistor, Electrical engineering, High voltage, Hardware_PERFORMANCEANDRELIABILITY, law.invention, Capacitor, Hardware_GENERAL, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, business, Metal gate, Low voltage, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::93c5c78a71e8bd1f995efb0a3568b699
https://doi.org/10.1109/iedm.2009.5424258 -
9
المؤلفون: Liqiong Wei, Yong-Gee Ng, Pramod Kolar, Yuegang Zhang, Fatih Hamzaoglu, Uddalak Bhattacharya, M. Bohr, Yih Wang, Kevin Zhang
المصدر: ISSCC
مصطلحات موضوعية: Power management, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Transistor, Semiconductor device modeling, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit design, Dynamic voltage scaling, law.invention, CMOS, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Static random-access memory, business, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f934c533ba31b3926cd0881ac91e9945
https://doi.org/10.1109/isscc.2009.4977505 -
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المؤلفون: T. Raz, D. Pivin, M. Agostinelli, W. Yang, Kaizad Mistry, S. Jacobs, Yih Wang, S. Johnson, S. Pae, G. Subramanian, J. Sandford, J. Xu, Pramod Kolar, J. Jopling, M. Jones, C. Peterson, Kevin Zhang, M. DiBattista, B. Lee, M. Mehalel, Bruce Woolery, J. Hicks
المصدر: Scopus-Elsevier
مصطلحات موضوعية: Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Threshold voltage, Soft breakdown, Electronic engineering, Process optimization, Cache, Static random-access memory, business, Scaling, Leakage (electronics), Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c98cc931a027fc044917ca28e022450
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846061871&partnerID=MN8TOARS