يعرض 1 - 10 نتائج من 1,991 نتيجة بحث عن '"Reverse recovery"', وقت الاستعلام: 0.86s تنقيح النتائج
  1. 1
    دورية أكاديمية
    A Simulation-Based Study on Integration of Si/SiGe Heterojunction Diode in Retrograde p-Well Schottky Source MOSFET for Single-Event Effects Hardening and Reverse Recovery Enhancement

    المؤلفون: Yu, Q., Chen, W., Zhang, A., Huang, J., Shen, Z., Li, J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4841-4846 Aug, 2024

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  2. 2
    دورية أكاديمية
    GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications

    المؤلفون: Ma, Y., Wang, H., Chen, S., Liu, C.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4570-4577 Aug, 2024

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  3. 3
    مؤتمر
    On the Superior Reverse Recovery Properties of Silicon Partial SOI SJ Diode

    المؤلفون: Antoniou, Marina, Udugampola, Nishad, Udrea, Florin, Ching Tee, Elizabeth Kho, Holke, Alexander

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :1-4 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD

    المؤلفون: Khaderbad, Mrunal A., Houadef, Ali, Rogers, Chris, Cousins, Ian, Waghmare, Parag, Pandey, Deepak, Hsu, Wesley Chih-Wei, Amanullah, Mohammad, Efthymiou, Epameinondas, Ould-Ahmed, Sami, Bottcher, Tim, Klingbeil, Matthias

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :410-413 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Superjunction MOSFET with an N-Dot Region in the P-Pillar for Soft Reverse Recovery

    المؤلفون: Li, Ping, Ma, Rongyao, Yang, Zhiyu, Li, Chao, Shen, Jingyu, Lin, Zhi, Hu, Shengdong

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :21-24 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)

    المؤلفون: Saraya, T., Fukui, M., Kobayashi, Y., Itou, K., Takakura, T., Suzuki, S., Gejo, R., Sakano, T., Inokuchi, T., Matsudai, T., Takao, K., Hiramoto, T.

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :546-549 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    دورية أكاديمية
    Experimental Demonstration of a 650-V Superjunction MOSFET With Dual Schottky Contacts for Fast Reverse Recovery

    المؤلفون: Li, P., Wang, D., Lin, Z., Ma, R., Hu, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3818-3822 Jun, 2024

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  8. 8
    دورية أكاديمية
    16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

    المؤلفون: Yu, Q., Huang, J., Shen, Z., Zhang, A., Chen, W.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):1064-1067 Jun, 2024

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  9. 9
    دورية أكاديمية
    An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range

    المؤلفون: Zhu, M., Pei, Y., Yang, F., Cheng, Z., Ma, D., Wang, L.

    المصدر: IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 39(6):7029-7044 Jun, 2024

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  10. 10
    دورية أكاديمية
    Third Quadrant Operation of SiC MOSFETs: Comprehensive Analysis and Condition Monitoring Solution

    المؤلفون: Sajadi, R., Ugur, E., Farhadi, M., Vankayalapati, B.T., Saadat, A., Vandenberghe, W.G., Akin, B.

    المصدر: IEEE Transactions on Components, Packaging and Manufacturing Technology IEEE Trans. Compon., Packag. Manufact. Technol. Components, Packaging and Manufacturing Technology, IEEE Transactions on. 14(5):851-861 May, 2024

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