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1دورية أكاديمية
المؤلفون: Canute I. Vaz, Changze Liu, Jason P. Campbell, Jason T. Ryan, Richard G. Southwick III, David Gundlach, Anthony S. Oates, Ru Huang, Kin. P. Cheung
المصدر: AIP Advances, Vol 6, Iss 6, Pp 065212-065212-9 (2016)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2158-3226
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المؤلفون: Tarun Samadder, Souvik Mahapatra, Narendra Parihar, Nilotpal Choudhury, Richard G. Southwick, James H. Stathis, Miaomiao Wang
المصدر: Recent Advances in PMOS Negative Bias Temperature Instability ISBN: 9789811661198
Recent Advances in PMOS Negative Bias Temperature Instabilityمصطلحات موضوعية: Materials science, business.industry, Optoelectronics, business, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::666c243266e55d03d484243ca8e25ddf
https://doi.org/10.1007/978-981-16-6120-4_11 -
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المؤلفون: Richard G. Southwick, Narendra Parihar, Souvik Mahapatra, Tarun Samadder, Uma Sharma, James H. Stathis, Miaomiao Wang, Nilotpal Choudhury
المصدر: Recent Advances in PMOS Negative Bias Temperature Instability ISBN: 9789811661198
Recent Advances in PMOS Negative Bias Temperature Instabilityمصطلحات موضوعية: Silicon on insulator
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::514bd6a27344bcf2bbb12bc9c32fd2a7
https://doi.org/10.1007/978-981-16-6120-4_10 -
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المؤلفون: Nilotpal Choudhury, Richard G. Southwick, Tarun Samadder, Souvik Mahapatra, Huimei Zhou, Miaomiao Wang
المصدر: Recent Advances in PMOS Negative Bias Temperature Instability ISBN: 9789811661198
مصطلحات موضوعية: Materials science, Silicon, business.industry, Gate insulator, chemistry.chemical_element, Stress (mechanics), Acceleration, Stack (abstract data type), chemistry, Optoelectronics, business, Scaling, Voltage, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::623842f08b50ec33fba095002f8404a4
https://doi.org/10.1007/978-981-16-6120-4_12 -
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المؤلفون: Jingyun Zhang, Ruqiang Bao, Ernest Y. Wu, Richard G. Southwick, Miaomiao Wang, Dechao Guo, Tian Shen, Huimei Zhou, Veeraraghavan S. Basker
المصدر: IRPS
مصطلحات موضوعية: 010302 applied physics, Materials science, Dielectric strength, business.industry, Transistor, Time-dependent gate oxide breakdown, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, law.invention, Threshold voltage, Computer Science::Emerging Technologies, Reliability (semiconductor), law, Logic gate, 0103 physical sciences, Optoelectronics, Field-effect transistor, business, Nanosheet
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1910c12dbdccbac0b7b5fbbcb1a75f09
https://doi.org/10.1109/irps46558.2021.9405204 -
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المؤلفون: Ravi Tiwari, Nilotpal Choudhury, Richard G. Southwick, Souvik Mahapatra, Huimei Zhou, Miaomiao Wang, Tarun Samadder
المصدر: IRPS
مصطلحات موضوعية: 010302 applied physics, Materials science, Negative-bias temperature instability, Acceleration factor, Condensed matter physics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, Threshold voltage, Dimension (vector space), 0103 physical sciences, Field-effect transistor, 0210 nano-technology, Scaling, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::caa339198a150309833212715712b449
https://doi.org/10.1109/irps46558.2021.9405137 -
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المؤلفون: Virat Mehta, Devika Sil, V. Katragadda, E. R. Evarts, J. DeBrosse, Sanjay Mehta, Richard G. Southwick, C. Long, Abraham Arceo, Dominik Metzler, Theodorus E. Standaert, A. Gasasira, C.-C. Yang, Son Nguyen, Raghuveer R. Patlolla, P. Nieves, D. Houssameddine, E. R. J. Edwards, V. Pai, Thomas M. Maffitt, Daniel C. Worledge, Michael Rizzolo, James Chingwei Li, O. van der Straten, J. Fullam, J. Morillo, Yaocheng Liu, Heng Wu, R. Johnson, Chu Isabel Cristina, J. M. Slaughter, T. Levin, S. McDermott, R. Pujari, Guohan Hu, James J. Demarest, Daniel C. Edelstein, Ashim Dutta, Yutaka Nakamura, M. Iwatake, M.R. Wordeman
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Magnetoresistive random-access memory, Tunnel magnetoresistance, Reliability (semiconductor), Materials science, CMOS, Stack (abstract data type), business.industry, Optoelectronics, Node (circuits), Time-dependent gate oxide breakdown, business, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7bd1db9bbbe44a73b965abe369e8b585
https://doi.org/10.1109/iedm13553.2020.9371922 -
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المؤلفون: Sanjay Mehta, Richard G. Southwick, Ernest Y. Wu, Baozhen Li, Miaomiao Wang
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Conduction electron, Coupling, Materials science, Chemical physics, Electric field, Dielectric, Electron, Thermal conduction, Quantum tunnelling, Anode
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6181063a1c1bc93d84d6815d541d260f
https://doi.org/10.1109/iedm13553.2020.9372017 -
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المؤلفون: Jing Guo, Balasubramanian S. Pranatharthi Haran, Miaomiao Wang, Paul C. Jamison, V. Basker, James Chingwei Li, Richard G. Southwick, Vijay Narayanan, Shanti Pancharatnam, Dechao Guo, Muthumanickam Sankarapandian, Nicolas Loubet, Ruqiang Bao, Huimei Zhou, Huiming Bu, Koji Watanabe, Mukesh Khare, Jingyun Zhang, James J. Demarest
المصدر: 2020 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Compensation (engineering), Threshold voltage, law.invention, Reduction (complexity), Dipole, chemistry, law, Logic gate, Optoelectronics, business, Nanosheet
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0325658de271cb045bd8e65882c029ed
https://doi.org/10.1109/vlsitechnology18217.2020.9265010 -
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المؤلفون: Souvik Mahapatra, Huimei Zhou, Uma Sharma, Nilotpal Choudhury, Richard G. Southwick, Miaomiao Wang
المصدر: IRPS
مصطلحات موضوعية: 010302 applied physics, Heat effect, Materials science, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, P channel, Temperature instability, 0103 physical sciences, Nano, 0210 nano-technology, Hot carrier degradation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::18a2a5be9707475ee71a0e0ca9099542
https://doi.org/10.1109/irps45951.2020.9128310
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