يعرض 1 - 10 نتائج من 50 نتيجة بحث عن '"Ryu, Seong-Wan"', وقت الاستعلام: 0.92s تنقيح النتائج
  1. 1
    مؤتمر
    A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention

    المؤلفون: Ryu, Seong-Wan, Min, Kyung Kyu, Hwang, Sunghwan, Seung, Hyunmin, Yoon, Sungsoo, Nam, Yoonjae, Moon, Jungmin, Kim, Yaeji, Kim, Euntae, Park, Jongkook, Jang, Kyoungchul, Kang, Sinwoo, Kim, Taekyun, Kim, Seonsoon, Jin, Ilsup, Cha, Seonyong

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

    المؤلفون: Ryu, Seong-Wan, Min, Kyungkyu, Shin, Jungho, Kwon, Heimi, Nam, Donghoon, Oh, Taekyung, Jang, Tae-Su, Yoo, Minsoo, Kim, Yongtaik, Hong, Sungjoo

    المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :21.6.1-21.6.4 Dec, 2017

    Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

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  3. 3
    مؤتمر
    One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS

    المؤلفون: Ryu, Seong-Wan, Han, Jin-Woo, Dong-Il Moon, Yang-Kyu Choi

    المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

    Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Multiple data storage of URAM (Unified-RAM) with multi dual cell (MDC) method

    المؤلفون: Bae, Dong-il, Gu, Bonsang, Ryu, Seong-wan, Choi, Yang-Kyu

    المصدر: 2008 IEEE Silicon Nanoelectronics Workshop Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE. :1-2 Jun, 2008

    Relation: 2008 IEEE Silicon Nanoelectronics Workshop (SNW)

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  5. 5
    مؤتمر
    A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM

    المؤلفون: Han, Jin-Woo, Ryu, Seong-Wan, Kim, Chungjin, Kim, Sungho, Im, Maesoon, Choi, Sung Jin, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu

    المصدر: 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :929-932 Dec, 2007

    Relation: 2007 IEEE International Electron Devices Meeting

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  6. 6
    دورية أكاديمية
    A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

    المؤلفون: Bae, Dong-Il, Ryu, Seong-Wan, Gu, Bonsang, Choi, Yang-Kyu

    المصدر: In Microelectronic Engineering 2010 87(2):135-138

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  7. 7
    دورية أكاديمية
    Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

    المؤلفون: Lee, Jong-Won, Ryu, Seong-Wan, Shin, Dong Ok, Kim, Bong Hoon, Kim, Sang Ouk, Choi, Yang-Kyu

    المصدر: In Solid State Electronics June 2009 53(6):640-643

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  8. 8
    دورية أكاديمية
    Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

    المؤلفون: Ryu, Seong-Wan, Han, Jin-Woo, Kim, Chung-Jin, Kim, Sungho, Choi, Yang-Kyu

    المصدر: In Solid State Electronics 2009 53(3):389-391

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  9. 9
    دورية أكاديمية

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  10. 10
    Study on the Vt Variation of TiN-metal Buried-gate (BG) Cell Transistors in DRAM

    المؤلفون: Jeong Jae-Goan, Jang Tae-Su, Cha Seon-Yong, Yoo Min-Soo, Chun Sung-Kil, Choi Deuksung, Ryu Seong-Wan, Kim Yong-Taik

    المصدر: Journal of the Korean Physical Society. 59:408-411

    مصطلحات موضوعية: Materials science, business.industry, Transistor, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, Chemical vapor deposition, law.invention, Metal, chemistry, law, visual_art, visual_art.visual_art_medium, Optoelectronics, Rapid thermal annealing, Metal gate, business, Tin, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::08d18216cf0705cad8ace860d248dccd
    https://doi.org/10.3938/jkps.59.408

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