المؤلفون: Siva Pratap Reddy, M., Hee-Sung Kang, Dong-Seok Kim, Young-Woo Jo, Chul-Ho Won, Ryun-Hwi Kim, Kyu-Il Jang, Chandrashekhar, C.H., Jung-Hee Lee, Rajagopal Reddy, V.

المصدر: 2012 International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. :69-72 Aug, 2012

Relation: 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

المؤلفون: Ryun-Hwi Kim, Bong-Yeol Choi, Seung-Hyeon Kang, Jung-Hee Lee

المصدر: JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:469-473

مصطلحات موضوعية: Materials science, business.industry, Protection layer, Optoelectronics, Algan gan, High-electron-mobility transistor, Electrical and Electronic Engineering, Performance improvement, business, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7ef438885c4cb69d5dc6b7fee0f0f450
https://doi.org/10.5573/jsts.2020.20.5.469

المؤلفون: Ryun-Hwi Kim, Eun Jin Kim, Woo-Hyun Ahn, Jeong-Gil Kim, Terirama Thingujam, Quan Dai, Jung-Hee Lee, Seung-Hyeon Kang, Jun-Hyeok Lee

المصدر: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

مصطلحات موضوعية: Materials science, business.industry, Modulation, Subthreshold swing, Logic gate, Wide-bandgap semiconductor, Optoelectronics, Dielectric, business, Fin (extended surface), Leakage (electronics), Threshold voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2463831d20891e84590506ed1337a5bb
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365447

المؤلفون: Kyu Jun Cho, Hyung Sup Yoon, Hokyun Ahn, Jung-Hee Lee, Ryun-Hwi Kim, Haecheon Kim, Ji-Heon Kim, Sung-Jae Chang, Jae-Won Do, Jin-Mo Yang, Jong-Won Lim, Min Jeong Shin, Byoung-Gue Min, Hyun-Wook Jung

المصدر: Thin Solid Films. 628:31-35

مصطلحات موضوعية: Materials science, Transconductance, Analytical chemistry, Gallium nitride, 02 engineering and technology, Surface finish, 01 natural sciences, law.invention, chemistry.chemical_compound, X-ray photoelectron spectroscopy, Saturation current, law, 0103 physical sciences, Materials Chemistry, 010302 applied physics, Tetramethylammonium hydroxide, business.industry, Transistor, Metals and Alloys, Heterojunction, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cc38158fc15b086825a2cfab84af99fb
https://doi.org/10.1016/j.tsf.2017.02.053

المؤلفون: Hyoung-Joo Kim, Dong-Seok Kim, Byeong-Ok Lim, Bok-Hyung Lee, Chul-Ho Won, Ryun-Hwi Kim, Gil-Wong Choi, Jung-Hee Lee, In-Pyo Hong

المصدر: Journal of Crystal Growth. 395:5-8

مصطلحات موضوعية: Materials science, Photoluminescence, business.industry, Doping, Heterojunction, Substrate (electronics), Condensed Matter Physics, Inorganic Chemistry, Barrier layer, Stress (mechanics), Materials Chemistry, Optoelectronics, Field-effect transistor, business, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b713f981da82c4077988ca716de120b8
https://doi.org/10.1016/j.jcrysgro.2014.02.046

المؤلفون: Ki-Sik Im, Chul-Ho Won, Dong-Seok Kim, Do-Kywn Kim, Hee-Sung Kang, Ryun-Hwi Kim, Jung-Hee Lee, Young-Woo Jo, Ki-Won Kim

المصدر: Electronics Letters. 50:1749-1751

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Wide-bandgap semiconductor, Drain-induced barrier lowering, Threshold voltage, law.invention, Semiconductor, Gate oxide, law, Etching (microfabrication), MOSFET, Optoelectronics, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4794b26a6fac00ddd134a6e812b72b05
https://doi.org/10.1049/el.2014.1692

المؤلفون: Ryun-Hwi Kim, Hyoung-Joo Kim, Gil-Wong Choi, Ki-Sik Im, Jung-Hee Lee, Byeong-Ok Lim, Jongmin Lee, Bok-Hyung Lee, Jung Soo Lee, Sang-Il Kim

المصدر: The Journal of Korean Institute of Electromagnetic Engineering and Science. 24:128-135

مصطلحات موضوعية: Power-added efficiency, Fabrication, Materials science, business.industry, Amplifier, Transconductance, Transistor, Heterojunction, Cutoff frequency, law.invention, law, Optoelectronics, business, Power density

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d99c8ad844e1fecf392a8e54d32602d0
https://doi.org/10.5515/kjkiees.2013.24.2.128

المؤلفون: Ryun-Hwi Kim, Jung Hwa Lee, Byungmin Lee, Gil-Wong Choi, Ho-Chul Kim, B.O. Lim, In-Pyo Hong

المصدر: Electronics Letters. 49:1013-1015

مصطلحات موضوعية: Materials science, Passivation, business.industry, Transconductance, Contact resistance, Wide-bandgap semiconductor, High-electron-mobility transistor, Rapid thermal processing, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, Thin film, business, Ohmic contact

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::51efa66754200581f4c4e1f3d57327c3
https://doi.org/10.1049/el.2013.1211

المؤلفون: Ryun-Hwi Kim, Ki-Sik Im, Chun Sung Lee, Jung-Hee Lee, Ki-Won Kim, Dong-Seok Kim, Sorin Cristoloveanu

المصدر: IEEE Electron Device Letters. 34:27-29

مصطلحات موضوعية: 010302 applied physics, Electron mobility, Materials science, business.industry, Transconductance, Transistor, Wide-bandgap semiconductor, Electrical engineering, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, chemistry.chemical_compound, chemistry, law, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, MISFET

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b63abc639d3ec8292f19c7e6a6f754a7
https://doi.org/10.1109/led.2012.2222861

المؤلفون: Yoo-Mi Kwon, Dong-Hyeok Son, Ki-Won Kim, Jae-Hoon Lee, Sang-Min Jeon, Dong-Seok Kim, Hee-Sung Kang, Ryun-Hwi Kim, Sorin Cristoloveanu, Jung-Hee Lee, Young-Woo Jo, Ki-Sik Im, Chul-Ho Won

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), (2011101050017B,‘Development of high efficiency GaN power device for an power grid inverter system’), the IT R&D program of MKE/KEIT (10038766, Energy Efficient Power Semiconductor Technology for Next Generation Data Center).

المصدر: 25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013)
25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013), May 2013, Kanazawa, Japan. ⟨10.1109/ISPSD.2013.6694433⟩

مصطلحات موضوعية: 010302 applied physics, III-V semiconductors, Materials science, Fabrication, wide band gap semiconductors, business.industry, Transconductance, Doping, Gallium compounds, Wide-bandgap semiconductor, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 7. Clean energy, Subthreshold slope, MOSFET, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::185193a43e1f29444292be3b9e68d12d
https://doi.org/10.1109/ispsd.2013.6694433