يعرض 1 - 10 نتائج من 34 نتيجة بحث عن '"Sahng-Kyoo Lee"', وقت الاستعلام: 0.88s تنقيح النتائج
  1. 1
    مؤتمر
    Dependence of the effective p/sup +/ buried layer implant dose for reducing junction leakage on well-to-buried layer spacing

    المؤلفون: Jae-Geun Oh, Jung-Ho Lee, Kil-Ho Lee, Sahng-Kyoo Lee

    المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:75-78 vol.1 1999

    Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

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  2. 2
    مؤتمر
    Suppression of abnormal oxidation of WSi/sub x//P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation

    المؤلفون: Hyeon-Soo Kim, Sang-Do Lee, Jeong-Youb Lee, Sang-Moo Lee, Kil-Ho Lee, In-Seok Yee, Sahng-Kyoo Lee

    المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:59-62 vol.1 1999

    Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

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  3. 3
    مؤتمر
    Critical angle of channeling for low energy ion implantation

    المؤلفون: Jeong-Youb Lee, Jung-Ho Lee, Kil-Ho Lee, Sahng-Kyoo Lee, Cai, G.N., Erokhin, Y.

    المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:720-723 vol.2 1998

    Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

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  4. 4
    مؤتمر
    Diffusion and activation behaviors of boron by incorporated nitrogen ions in ammonia ambient

    المؤلفون: Jung-Ho Lee, Kil-Ho Lee, Sahng-Kyoo Lee

    المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:947-950 vol.2 1998

    Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

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  5. 5
    دورية أكاديمية
    Effects of thermal processes after silicidation on the performance of TiSi/sub 2//polysilicon gate device

    المؤلفون: Se-Aug Jang, Tae-Kyun Kim, In-Seok Yeo, Hyeon-Soo Kim, Sahng-Kyoo Lee

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 46(12):2353-2356 Dec, 1999

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  6. 6
    دورية أكاديمية
    Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient

    المؤلفون: Moon-Sig Joo, In-Seok Yeo, Chan-Ho Lee, Heung-Jae Cho, Se-Aug Jang, Sahng-Kyoo Lee

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 20(9):445-447 Sep, 1999

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  7. 7
    دورية أكاديمية
    Roles of sidewall oxidation in the devices with shallow trench isolation

    المؤلفون: Seung-Ho Pyi, In-Seok Yeo, Dae-Hee Weon, Young-Bog Kim, Sahng-Kyoo Lee

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 20(8):384-386 Aug, 1999

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  8. 8
    Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

    المؤلفون: Dim-Lee Kwong, Jianqiang Lin, Hoon-Jung Oh, G. Q. Lo, Dongzhi Chi, Sahng‐Kyoo Lee

    المصدر: IEEE Electron Device Letters. 29:977-980

    مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Gate dielectric, Electrical engineering, Dopant Activation, Capacitance, Electronic, Optical and Magnetic Materials, Gate oxide, MOSFET, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Metal gate

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0103fabf59ec9eef50d1f2ad1f2e156a
    https://doi.org/10.1109/led.2008.2001766

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  9. 9
    Enhanced Sensitivity of Small-Size (With 1-$\mu \hbox{m}$ Gate Length) Junction-Field-Effect-Transistor-Based Germanium Photodetector Using Two-Step Germanium Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

    المؤلفون: Sahng‐Kyoo Lee, Dim-Lee Kwong, G. Q. Lo, Jian-Ping Wang, Yong-Zhong Xiong, Mengjie Yu, H. Zang

    المصدر: IEEE Electron Device Letters. 30:1066-1068

    مصطلحات موضوعية: Materials science, business.industry, Photodetector, JFET, Electronic, Optical and Magnetic Materials, Photodiode, law.invention, CMOS, Vacuum deposition, law, Rise time, MOSFET, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2f087fb227cf60a5b80349341cea8127
    https://doi.org/10.1109/led.2009.2029125

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  10. 10
    Oxidation Behavior of Nitrogen Implanted Dichlorosilane‐Based W‐polycide Gate

    المؤلفون: Sahng‐Kyoo Lee, Sang-Do Lee, In-Seok Yeo, Sang-Moo Lee, Hyeon-Soo Kim

    المصدر: Journal of The Electrochemical Society. 146:4630-4633

    مصطلحات موضوعية: Renewable Energy, Sustainability and the Environment, Inorganic chemistry, chemistry.chemical_element, Dichlorosilane, Tungsten, Condensed Matter Physics, Silane, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Ion implantation, chemistry, Chemical engineering, Gate oxide, Silicide, Electrode, Materials Chemistry, Electrochemistry, Polycide

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ea73f359eeeaa43017ae907b31ec8d3c
    https://doi.org/10.1149/1.1392685

    View this record from the Institute of Physics
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