يعرض 1 - 10 نتائج من 32 نتيجة بحث عن '"Sangyeon Han"', وقت الاستعلام: 0.82s تنقيح النتائج
  1. 1
    مؤتمر
    40 nm electron beam patterning and its application to silicon nano-structure fabrication

    المؤلفون: Sangyeon Han, Taejnn Park, Bonkee Kim, Hyungcheol Shin, Kwyro Lee

    المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :163-166 1999

    Relation: ICVC'99. 6th International Conference on VLSI and CAD

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  2. 2
    مؤتمر
    Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

    المؤلفون: Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin

    المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :111-114 1998

    Relation: International Electron Devices Meeting 1998. Technical Digest

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  3. 3
    دورية أكاديمية
    50 nm MOSFET with electrically induced source/drain (S/D) extensions

    المؤلفون: Sangyeon Han, Sung-Il Chang, Jongho Lee, Hyungcheol Shin

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 48(9):2058-2064 Sep, 2001

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  4. 4
    مؤتمر
    Silicon MOS memory with self-aligned quantum dot on narrow channel

    المؤلفون: Sangyeon Han, Taekeun Hwang, Hyungcheol Shin

    المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :187-189 1999

    Relation: ICVC'99. 6th International Conference on VLSI and CAD

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  5. 5
    مؤتمر
    Lateral silicon field emission devices using electron beam lithography

    المؤلفون: Hyungcheol Shin, Sun-A Yang, Taekeun Hwang, Sangyeon Han, Jongho Lee, Yjong Duk Lee

    المصدر: Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Microprocesses and nanotechnology '99 Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International. :134-135 1999

    Relation: Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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  6. 6
    مؤتمر
    Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor

    المؤلفون: Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin

    المصدر: Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Microprocess and nanotechnology Microprocesses and Nanotechnology Conference, 1998 International. :150-151 1998

    Relation: Microprocesses and Nanotechnology '98. 1998 International Microprocesses and Nanotechnology Conference

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  7. 7
    مؤتمر
    A Nano-Structure Memory With SOI Edge Channel And A Nano Dot

    المؤلفون: Geunsook Park, Sangyeon Han, Hyungcheol Shin

    المصدر: Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Microprocess and nanotechnology Microprocesses and Nanotechnology Conference, 1998 International. :315-316 1998

    Relation: Microprocesses and Nanotechnology '98. 1998 International Microprocesses and Nanotechnology Conference

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  8. 8
    دورية أكاديمية
    Room temperature single electron effects in a Si nano-crystal memory

    المؤلفون: Ilgweon Kim, Sangyeon Han, Kwangseok Han, Jongho Lee, Hyungcheol Shin

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 20(12):630-631 Dec, 1999

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  9. 9
    A silicon quantum wire transistor with one-dimensional subband effects

    المؤلفون: Minkyu Je, Hyungcheol Shin, Ilgweon Kim, Sangyeon Han

    المصدر: Solid-State Electronics. 44:2207-2212

    مصطلحات موضوعية: Thermal oxidation, Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Hybrid silicon laser, Quantum wire, Transistor, chemistry.chemical_element, Strained silicon, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, chemistry, law, Materials Chemistry, Optoelectronics, Dry etching, Electrical and Electronic Engineering, business, Electron-beam lithography

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4b1c9653bf128e119d227a5ff6a6937c
    https://doi.org/10.1016/s0038-1101(00)00191-x

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  10. 10
    A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain : Application to Sub-50nm DRAM Cell

    المؤلفون: Jong-Man Park, Donggun Park, Wouns Yang, Yong-seok Lee, Chang-Hoon Jeon, Wookje Kim, Sangyeon Han, Young-pil Kim, Jun-Bum Lee, S. Yamada, Shin-Deuk Kim, Si-Ok Sohn, Won-Seong Lee, Jung-Soo Park

    المصدر: 2007 IEEE International Electron Devices Meeting.

    مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Chip, Subthreshold slope, law.invention, Reduction (complexity), law, Optoelectronics, Field-effect transistor, business, Layer (electronics), Dram, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d6958d1b1f7458fe1ca699f40f0951c7
    https://doi.org/10.1109/iedm.2007.4419096

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