يعرض 1 - 7 نتائج من 7 نتيجة بحث عن '"Saripalli Yoga"', وقت الاستعلام: 0.77s تنقيح النتائج
  1. 1
    مؤتمر
    Gan-on-Si process defect detection and analysis for HB-LEDs and power devices

    المؤلفون: Halder, Sandip, Stiers, Karen, Kandaswamy, Prem Kumar, Rosmeulen, Maarten, Carbonell, Laureen, Saripalli, Yoga, Osman, Haris, Rosseel, Erik, Mani, Antonio, Hu, Qiona, Vedula, Srinivas, Polli, Marco

    المصدر: ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI. :371-374 May, 2013

    Relation: 2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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  2. 2
    دورية أكاديمية
    Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

    المؤلفون: Su, Jie, Posthuma, Niels, Wellekens, Dirk, Saripalli, Yoga N., Decoutere, Stefaan, Arif, Ronald, Papasouliotis, George D.

    المصدر: Journal of Electronic Materials. December 2016 45(12):6346-6354

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  3. 3
    دورية أكاديمية
    Transmission Electron Microscopy Study of an Epitaxial Gate Oxide on III-N Semiconductor Structures

    المؤلفون: Saripalli, Yoga. N., Liu, X-Q, Barlage, D. W., Johnson, M. A. L., Braddock, D., Stoddard, N. A., Chugh, A.

    المصدر: MRS Online Proceedings Library. 831(1):138-143

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  4. 4
    AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs

    المؤلفون: Brecht DeVos, P. K. Kandaswamy, Marleen Van Hove, Ming Zhao, Eric Carlson, Olivier Richard, Barun Dutta, S.B. Thapa, Hu Liang, E. Vancoille, Saripalli Yoga

    المصدر: physica status solidi c. 11:450-453

    مصطلحات موضوعية: Materials science, Silicon, business.industry, Nucleation, chemistry.chemical_element, Nanotechnology, Gallium nitride, Condensed Matter Physics, Epitaxy, Crystal, chemistry.chemical_compound, chemistry, CMOS, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::62ee8ad0a3fc2989578c81d39cb3d40a
    https://doi.org/10.1002/pssc.201300524

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  5. 5
    دورية أكاديمية
    MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement.

    المؤلفون: Ming Zhao, Hu Liang, Kandaswamy, Prem Kumar, Van Hove, Marleen, Venegas, Rafael, Vranken, Evi, Favia, Paola, Vanderheyden, Annelies, Vanhaeren, Danielle, Saripalli, Yoga Nrusimha, Decoutere, Stefaan, Langer, Robert

    المصدر: Physica Status Solidi (C); May2016, Vol. 13 Issue 5/6, p311-316, 6p

    مصطلحات موضوعية: ALUMINUM nitride, METALLIC oxides, CHEMICAL vapor deposition, COMPLEMENTARY metal oxide semiconductors, SEMICONDUCTOR wafers

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  6. 6
    دورية أكاديمية
    Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200 mm Si(111) substrates.

    المؤلفون: Zhao, Ming, Saripalli, Yoga, Kandaswamy, Prem Kumar, Liang, Hu, Firrincieli, Andrea, Decoutere, Stefaan, Vancoille, Eric

    المصدر: Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p446-449, 4p

    مصطلحات موضوعية: SEMICONDUCTOR research, SOLID state electronics, MODULATION-doped field-effect transistors, ALUMINUM gallium nitride, CHEMICAL vapor deposition

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  7. 7
    دورية أكاديمية
    Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate.

    المؤلفون: Liang, Hu, Saripalli, Yoga, Kandaswamy, Prem Kumar, Carlson, Eric Porter, Favia, Paola, Richard, Olivier, Bender, Hugo, Zhao, Ming, Thapa, Sarad Bahadur, Vancoille, Eric

    المصدر: Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p533-536, 4p

    مصطلحات موضوعية: LIGHT emitting diodes, POWER transistors, SEMICONDUCTOR wafers, SUBSTRATES (Materials science), SCANNING transmission electron microscopy

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